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8 Nov 2010

Volume 97, Issue 19, Articles (19xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 97, 193101 (2010); http://dx.doi.org/10.1063/1.3504664 (3 pages)

Qingzhen Hao, Yong Zeng, Xiande Wang, Yanhui Zhao, Bei Wang, I-Kao Chiang, Douglas H. Werner, Vincent Crespi, and Tony Jun Huang
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Characterization of complementary patterned metallic membranes produced simultaneously by a dual fabrication process

Qingzhen Hao, Yong Zeng, Xiande Wang, Yanhui Zhao, Bei Wang, I-Kao Chiang, Douglas H. Werner, Vincent Crespi, and Tony Jun Huang

Appl. Phys. Lett. 97, 193101 (2010); http://dx.doi.org/10.1063/1.3504664 (3 pages) | Cited 7 times

Online Publication Date: 8 November 2010

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An efficient technique is developed to fabricate optically thin metallic films with subwavelength patterns and their complements simultaneously. By comparing the spectra of the complementary films, we show that Babinet’s principle nearly holds for these structures in the optical domain. Rigorous full-wave simulations are employed to verify the experimental observations. It is further demonstrated that a discrete-dipole approximation can qualitatively describe the spectral dependence of the metallic membranes on the geometry of the constituent particles as well as the illuminating polarization.
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42.79.Wc Optical coatings
42.82.Cr Fabrication techniques; lithography, pattern transfer
78.66.Bz Metals and metallic alloys
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials

Gate dependent photocurrents at a graphene p-n junction

Eva C. Peters, Eduardo J. H. Lee, Marko Burghard, and Klaus Kern

Appl. Phys. Lett. 97, 193102 (2010); http://dx.doi.org/10.1063/1.3505926 (3 pages) | Cited 2 times

Online Publication Date: 9 November 2010

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We have used scanning photocurrent microscopy to explore the electronic characteristics of a graphene p-n junction fabricated by local chemical doping of a graphene sheet. The photocurrent signal at the junction was found to be most prominent for gate voltages between the two Dirac points of the oppositely doped graphene regions. The gate dependence of this signal agrees well with simulations based upon the Fermi level difference between the two differently doped sections. It is concluded that the photocurrent maps are dominated by the built-in electric field, with only a minor photothermoelectric contribution.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Radio-frequency characteristics of graphene oxide

Whan Kyun Kim, Young Mo Jung, Joon Hyong Cho, Ji Yoong Kang, Ju Yeong Oh, Hosung Kang, Hee-Jo Lee, Jae Hun Kim, Seok Lee, H. J. Shin, J. Y. Choi, S. Y. Lee, Y. C. Kim, I. T. Han, J. M. Kim, et al.

Appl. Phys. Lett. 97, 193103 (2010); http://dx.doi.org/10.1063/1.3506468 (3 pages) | Cited 1 time

Online Publication Date: 9 November 2010

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We confirm graphene oxide, a two-dimensional carbon structure at the nanoscale level can be a strong candidate for high-efficient interconnector in radio-frequency range. In this paper, we investigate high frequency characteristics of graphene oxide in range of 0.5–40 GHz. Radio-frequency transmission properties were extracted as S-parameters to determine the intrinsic ac transmission of graphene sheets, such as the impedance variation dependence on frequency. The impedance and resistance of graphene sheets drastically decrease as frequency increases. This result confirms graphene oxide has high potential for transmitting signals at gigahertz ranges.
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78.70.Gq Microwave and radio-frequency interactions
72.30.+q High-frequency effects; plasma effects
72.80.Vp Electronic transport in graphene

Luminescence properties of In(Zn)P alloy core/ZnS shell quantum dots

Ung Thi Dieu Thuy, Peter Reiss, and Nguyen Quang Liem

Appl. Phys. Lett. 97, 193104 (2010); http://dx.doi.org/10.1063/1.3515417 (3 pages)

Online Publication Date: 10 November 2010

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Chemically synthesized InP/ZnS core/shell quantum dots (QDs) are studied using time-resolved photoluminescence spectroscopy and x-ray diffraction. Zinc stearate, which is added during the synthesis of the InP core, significantly improves the optical characteristics of the QDs. The luminescence quantum yield (QY) reaches 60%–70% and the emission is tunable from 485 to 586 nm by varying the Zn2+:In3+ molar ratio and growth temperature. The observed increased Stokes shift, luminescence decay time, and QY in the presence of Zn are rationalized by the formation of an In(Zn)P alloy structure that causes band-edge fluctuation to enhance the confinement of the excited carriers.
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78.55.Hx Other solid inorganic materials
78.67.Hc Quantum dots
78.40.Ha Other nonmetallic inorganics
78.47.jd Time resolved luminescence

Enhanced photocurrent generation from UV-laser-synthesized-single-wall-carbon-nanotubes/n-silicon hybrid planar devices

V. Le Borgne, P. Castrucci, S. Del Gobbo, M. Scarselli, M. De Crescenzi, M. Mohamedi, and M. A. El Khakani

Appl. Phys. Lett. 97, 193105 (2010); http://dx.doi.org/10.1063/1.3513266 (3 pages) | Cited 1 time

Online Publication Date: 10 November 2010

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We report on the significant generation of photocurrent (PC) from planar devices built from the drop casting of UV-laser-synthesized single-wall-carbon-nanotubes (SWCNTs) onto n-Si substrate. These SWCNTs/n-Si hybrid devices are shown to generate PC with external quantum efficiencies (EQE) reaching up to ∼ 10%. Their EQE has been optimized by controlling the amount of deposited SWCNTs, and is shown to be significantly enhanced over all the spectral range with a pronounced boost (up to ∼ 25× times) around 460 nm. The extension of the photoresponse of these devices toward UV correlates well with the absorbance of SWCNTs.
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72.40.+w Photoconduction and photovoltaic effects
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Effects of absorption coefficients and intermediate-band filling in InAs/GaAs quantum dot solar cells

W. G. Hu, T. Inoue, O. Kojima, and T. Kita

Appl. Phys. Lett. 97, 193106 (2010); http://dx.doi.org/10.1063/1.3516468 (3 pages) | Cited 2 times

Online Publication Date: 10 November 2010

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The effects of absorption coefficients were incorporated in a detailed balance model to analyze the intermediate-band (IB) configuration in quantum dot (QD) solar cells. Our results show that the optimum IB level, EIB, depends on the ratio of two subbandgap absorption coefficient constants, αIC0/αVI0. Efficiency contour plots have been calculated to determine the optimum values of EIB and αIC0/αVI0. In many cases, a large αIC0 results in high conversion efficiency, especially for thin QD solar cells. Optimizing QD shape and size is a promising method to increase αIC0. Increasing the QD total thickness partially addresses the urgent demand for a large αIC0.
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88.40.jm Thin film III-V and II-VI based solar cells
78.67.Hc Quantum dots
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Mechanical stiffening, bistability, and bit operations in a microcantilever

Warner J. Venstra, Hidde J. R. Westra, and Herre S. J. van der Zant

Appl. Phys. Lett. 97, 193107 (2010); http://dx.doi.org/10.1063/1.3511343 (3 pages) | Cited 4 times

Online Publication Date: 11 November 2010

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We investigate the nonlinear dynamics of microcantilevers. We demonstrate mechanical stiffening of the frequency response at large amplitudes, originating from the geometric nonlinearity. At strong driving the cantilever amplitude is bistable. We map the bistable regime as a function of drive frequency and amplitude, and suggest several applications for the bistable microcantilever, of which a mechanical memory is demonstrated.
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07.10.Cm Micromechanical devices and systems
62.20.dq Other elastic constants

Shear-force atomic force microscope by using the second resonance regime of tuning fork probe

Zhuang Liu, Ying Zhang, Shaw Wei Kok, Boon Ping Ng, and Yeng Chai Soh

Appl. Phys. Lett. 97, 193108 (2010); http://dx.doi.org/10.1063/1.3518057 (3 pages)

Online Publication Date: 12 November 2010

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An imaging scheme of shear-force atomic force microscope is proposed by exploiting the second resonance regime of the tuning fork probe. Theoretical analysis and experimental results demonstrate that the imaging scheme can deliver better sensitivity and higher resolution of topographic imaging.
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07.79.Lh Atomic force microscopes
46.40.-f Vibrations and mechanical waves
68.37.Ps Atomic force microscopy (AFM)

Hydrogenated amorphous silicon solar cell on glass substrate patterned by hexagonal nanocylinder array

Wei-Chen Tu, Yi-Tsung Chang, Chieh-Hung Yang, Dan-Ju Yeh, Chung-I Ho, Chun-Yuan Hsueh, and Si-Chen Lee

Appl. Phys. Lett. 97, 193109 (2010); http://dx.doi.org/10.1063/1.3515853 (3 pages) | Cited 1 time

Online Publication Date: 12 November 2010

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The hydrogenated amorphous silicon thin film solar cell fabricated on the glass substrate patterned by hexagonal nanocylinder array prepared by self-assembled SiO2 nanoparticles and nanosphere lithography was investigated. It is demonstrated that the short-circuit current of the patterned solar cell with 65 nm depth nanocylinder increases from 12.3 to 14.4 mA/cm2, and the efficiency increases from 5.18% to 6.59% as compared to the flat solar cell. These phenomena suggest that both effective light trapping and localized surface plasmon lead to significant improvement of light absorption in amorphous silicon solar cells.
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88.40.jj Silicon solar cells
81.16.Rf Micro- and nanoscale pattern formation
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