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8 Nov 2010

Volume 97, Issue 19, Articles (19xxxx)

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Appl. Phys. Lett. 97, 193101 (2010); http://dx.doi.org/10.1063/1.3504664 (3 pages)

Qingzhen Hao, Yong Zeng, Xiande Wang, Yanhui Zhao, Bei Wang, I-Kao Chiang, Douglas H. Werner, Vincent Crespi, and Tony Jun Huang
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Color-tunable multilayer organic light emitting diode composed of DNA complex and tris(8-hydroxyquinolinato)aluminum

Kazuki Nakamura, Takayuki Ishikawa, Daisuke Nishioka, Takahiro Ushikubo, and Norihisa Kobayashi

Appl. Phys. Lett. 97, 193301 (2010); http://dx.doi.org/10.1063/1.3512861 (3 pages) | Cited 2 times

Online Publication Date: 8 November 2010

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In this study, the voltage-controlled color tunability of an organic light emitting diode composed of a DNA/Polyaniline/Ru(bpy)32+ complex (as the hole transport layer) and tris(8-hydroxyquinolinato)aluminum (as the electron transport layer) was demonstrated. At applied voltage of 5 V, green emission was observed from Alq3. As the voltage was increased, the emission color changed from green to yellow (14 V) to orange (16 V) and finally to red (18 V), with strong contribution of red emission from Ru(bpy)32+. This color tunability of the emission was principally a result of the shift in the carrier recombination region with an increase in applied voltage.
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85.60.Jb Light-emitting devices
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Optical second harmonic generation at heterojunction interfaces of a molybdenum trioxide layer and an organic layer

A. B. El Basaty, Y. Miyauchi, G. Mizutani, T. Matsushima, and H. Murata

Appl. Phys. Lett. 97, 193302 (2010); http://dx.doi.org/10.1063/1.3513297 (3 pages)

Online Publication Date: 8 November 2010

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We have observed optical second harmonic generation (SHG) from a space charge layer (SCL) in a stacked indium tin oxide (ITO)/molybdenum trioxide (MoO3)/NN-diphenyl-NN-bis(1-naphthly)-1,1′-biphenyl-4,4′-diamine (α-NPD) system. When the MoO3 thicknesses were increased, the SHG signals from this system decreased sharply at smaller MoO3 thicknesses, and were saturated at MoO3 thicknesses larger than 1 nm. These results prove the vital role of SCL in improvement of drive voltages of organic light-emitting diodes.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.79.Wc Optical coatings
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Mechanically tunable conjugated polymer distributed feedback lasers

Bernard Wenger, Nicolas Tétreault, Mark E. Welland, and Richard H. Friend

Appl. Phys. Lett. 97, 193303 (2010); http://dx.doi.org/10.1063/1.3509405 (3 pages) | Cited 4 times

Online Publication Date: 8 November 2010

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Herein we report a low-threshold organic laser device based on semiconducting poly(9,9′-dioctylfluoren-2,7-diyl-alt-benzothiadiazole) (F8BT) encapsulated in a mechanically stretchable polydimethylsiloxane (PDMS) matrix. We take advantage of the natural flexibility of PDMS to alter the periodicity of the distributed feedback grating which in turn tunes the gain wavelength at which the resonant feedback is obtained. This way, we demonstrate that low-threshold lasing [6.1 μJ cm−2 (5.3 nJ)] is maintained over a large stretching range of 0%–7% which translates into a tuning range of about 20 nm.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking
42.79.Dj Gratings
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A route to strong p-doping of epitaxial graphene on SiC

Y. C. Cheng and U. Schwingenschlögl

Appl. Phys. Lett. 97, 193304 (2010); http://dx.doi.org/10.1063/1.3515848 (3 pages) | Cited 1 time

Online Publication Date: 9 November 2010

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The effects of Au intercalation on the electronic properties of epitaxial graphene grown on SiC{0001} substrates are studied using first principles calculations. A graphene monolayer on SiC{0001} restores the shape of the pristine graphene dispersion, where doping levels between strongly n-doped and weakly p-doped can be achieved by altering the Au coverage. We predict that Au intercalation between the two C layers of bilayer graphene grown on SiC{0001} makes it possible to achieve a strongly p-doped graphene state, where the p-doping level can be controlled by means of the Au coverage.
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73.22.Pr Electronic structure of graphene
71.15.-m Methods of electronic structure calculations
61.72.sd Impurity concentration
61.72.up Other materials
73.21.Ac Multilayers
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Transition from insulator to metal induced by hybridized connection of graphene and boron nitride nanoribbons

Jun He, Ke-Qiu Chen, Zhi-Qiang Fan, Li-Ming Tang, and W. P. Hu

Appl. Phys. Lett. 97, 193305 (2010); http://dx.doi.org/10.1063/1.3515921 (3 pages) | Cited 4 times

Online Publication Date: 9 November 2010

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A hybridized structure constructed by zigzag boron nitride nanoribbon and zigzag graphene nanoribbon is proposed, and their band structures and electronic transport properties are calculated by applying first-principles calculations. The results show that the band gap of the hybridized structure can be tuned and transitions from insulator to metal can be realized by changing the unit number of zigzag graphene nanoribbon. The currents with different spin polarization display different behavior.
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71.30.+h Metal-insulator transitions and other electronic transitions
73.22.Pr Electronic structure of graphene
72.25.-b Spin polarized transport
71.15.-m Methods of electronic structure calculations
73.63.Bd Nanocrystalline materials
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Surface plasmonic controllable enhanced emission from the intrachain and interchain excitons of a conjugated polymer

Kwan Hyun Cho, Sung Il Ahn, Seong Min Lee, Chung Sock Choi, and Kyung Cheol Choi

Appl. Phys. Lett. 97, 193306 (2010); http://dx.doi.org/10.1063/1.3508949 (3 pages) | Cited 2 times

Online Publication Date: 10 November 2010

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We demonstrate selectively enhanced emission by controlling the intrachain and interchain excitons of a conjugated polymer through adjusting surface plasmons. Enhanced light emission from the intrachain excitons was observed by coupling the localized surface plasmon resonance with the intrachain band of the conjugated polymer using Ag nanoparticles. Light emission from the interchain excitons was enhanced by exploiting both the increased strength of the interchain dipole due to the image dipole and the coupling between excitons and surface plasmon polaritons (SPPs). As the Ag nanostructures become complete films, light emission from the interchain excitons increased.
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71.35.-y Excitons and related phenomena
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
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Current-voltage characteristics of organic photovoltaic cells following deposition of cathode electrode

Hiroyuki Saeki, Kazuto Hirohara, Yasuko Koshiba, Satoshi Horie, Masahiro Misaki, Kimiya Takeshita, Kenji Ishida, and Yasukiyo Ueda

Appl. Phys. Lett. 97, 193307 (2010); http://dx.doi.org/10.1063/1.3516469 (3 pages)

Online Publication Date: 10 November 2010

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The current-voltage characteristics of benzoporphine-fullerene solar cells were measured subsequent to the deposition of Al as a cathode material. Even in vacuum, a shift in the open circuit voltage was observed at 20 min after Al deposition. Moreover, the displacement of inert gases (N2 or Ar) in the evaporation chamber enhanced the photovoltaic parameters. The power conversion efficiency was increased by 24% over the initial characteristics (from 1.04% to 1.29%), which indicates that the structure of the organic-metal interface changed rapidly after Al deposition, even if the process was performed in an air-free glovebox.
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88.40.jr Organic photovoltaics
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Crossbar memory array of organic bistable rectifying diodes for nonvolatile data storage

Kamal Asadi, Mengyuan Li, Natalie Stingelin, Paul W. M. Blom, and Dago M. de Leeuw

Appl. Phys. Lett. 97, 193308 (2010); http://dx.doi.org/10.1063/1.3508948 (3 pages)

Online Publication Date: 11 November 2010

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Cross-talk in memories using resistive switches in a cross-bar geometry can be prevented by integration of a rectifying diode. We present a functional cross bar memory array using a phase separated blend of a ferroelectric and a semiconducting polymer as storage medium. Each intersection acts simultaneously as a bistable rectifying diode. A logic table of a 4-bit memory and integration into a 3×3 cross bar array are demonstrated. The most difficult state, a high resistance bit completely surrounded by low resistance bits could be unambiguously identified.
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85.50.Gk Non-volatile ferroelectric memories
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Increased open-circuit voltage in bulk-heterojunction solar cells using a C60 derivative

Heejoo Kim, Jung Hwa Seo, Eun Young Park, Tae-Dong Kim, Kwanghee Lee, Kwang-Sup Lee, Shinuk Cho, and Alan J. Heeger

Appl. Phys. Lett. 97, 193309 (2010); http://dx.doi.org/10.1063/1.3518066 (3 pages)

Online Publication Date: 12 November 2010

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The fullerene derivative C60-fused N-methyl-2-(3-hexylthiophen-2-yl)pyrrolidine (C60-TH-Hx) is used as the acceptor material in bulk-heterojunction (BHJ) solar cells fabricated with the low band-gap polymer poly[(4,4′-bis(2-ethylhexyl)dithiene[3,2-b:2′,3′-d]silole)-2,6-diyl-alt-(4,7-bis(2-thienyl)-2,1,3-benzothiadiazole)-5,5′-diyl]. Direct comparison with BHJ solar cells based on [6,6]-phenyl-C61-butyric methyl ester and Si-PCPDTBT indicates that the C60-TH-Hx acceptor yields a larger open-circuit voltage because of higher lowest unoccupied molecular orbital energy level of C60-TH-Hx.
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88.40.H- Solar cells (photovoltaics)
88.40.jr Organic photovoltaics
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Solution-processed cross-linkable hole selective layer for polymer solar cells in the inverted structure

Yanming Sun, Xiong Gong, Ben B. Y. Hsu, Hin-Lap Yip, Alex K.-Y. Jen, and Alan J. Heeger

Appl. Phys. Lett. 97, 193310 (2010); http://dx.doi.org/10.1063/1.3518074 (3 pages) | Cited 1 time

Online Publication Date: 12 November 2010

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Solution-processed cross-linkable tetraphenyldiamine-containing material (TPD-BVB) as a highly efficient hole selective transport layer was demonstrated. Polymer solar cells (PSCs) with an inverted structure fabricated with a thin cross-linked TPD-BVB film show comparable efficiency and superior long-term air stability when compared to devices fabricated with poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS). Thus, solution-processed TPD-BVB is an attractive alternative to PEDOT:PSS as a hole extraction layer in inverted structure PSCs.
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88.40.jr Organic photovoltaics
88.40.hj Efficiency and performance of solar cells
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
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Ultralow contact resistance in electrolyte-gated organic thin film transistors

Daniele Braga, Mingjing Ha, Wei Xie, and C. Daniel Frisbie

Appl. Phys. Lett. 97, 193311 (2010); http://dx.doi.org/10.1063/1.3518075 (3 pages)

Online Publication Date: 12 November 2010

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We show that the parasitic contact resistance in staggered organic thin film transistors employing a solid electrolyte as the gate dielectric is around RC = 10 Ω cm, two orders of magnitude lower than in conventional devices. Moreover, this parameter is only weakly dependent on the thickness of the semiconductor and on the nature of the metal/semiconductor pair. This unique feature of an electrolyte-gated transistor results from the electrochemical doping of the active layer occurring under the influence of the applied gate bias.
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85.30.Tv Field effect devices
61.72.U- Doping and impurity implantation
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