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5 Jul 2010

Volume 97, Issue 1, Articles (01xxxx)

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Appl. Phys. Lett. 97, 013301 (2010); http://dx.doi.org/10.1063/1.3458867 (3 pages)

M. Uno, Y. Hirose, T. Uemura, K. Takimiya, Y. Nakazawa, and J. Takeya
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High-power and high-speed organic three-dimensional transistors with submicrometer channels

M. Uno, Y. Hirose, T. Uemura, K. Takimiya, Y. Nakazawa, and J. Takeya

Appl. Phys. Lett. 97, 013301 (2010); http://dx.doi.org/10.1063/1.3458867 (3 pages) | Cited 7 times

Online Publication Date: 6 July 2010

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Three-dimensional organic field-effect transistors with high current density and high switching speed are developed with multiple submicrometer channels arranged perpendicularly to substrates. The short channel length is defined by the height of a multicolumnar structure without an electron-beam-lithography process. For devices using dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene, extremely high current density exceeding 10 A/cm2 and fast switching within 0.2 μs are realized with an on-off ratio of 105. The unprecedented performance is beyond general requirements to control organic light-emitting diodes, so that even more extensive applications to higher-speed active-matrices and display-driving circuits can be realized with organic semiconductors.
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85.30.Tv Field effect devices
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Electro-optic measurement of carrier mobility in an organic thin-film transistor

E. G. Bittle, J. W. Brill, and J. E. Anthony

Appl. Phys. Lett. 97, 013302 (2010); http://dx.doi.org/10.1063/1.3460526 (3 pages) | Cited 4 times

Online Publication Date: 7 July 2010

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We have used an electro-optic technique to measure the position-dependent infrared absorption of holes injected into a thin crystal of the organic semiconductor, 6,13-bis(triisopropylsilylethynyl)-pentacene incorporated in a field-effect transistor. By applying square-wave voltages of variable frequency to the gate or drain, one can measure the time it takes for charges to accumulate on the surface, and therefore, determine their mobility.
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85.30.Tv Field effect devices
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Single carrier devices with electrical doped layers for the characterization of charge-carrier transport in organic thin-films

Matthias Schober, Selina Olthof, Mauro Furno, Björn Lüssem, and Karl Leo

Appl. Phys. Lett. 97, 013303 (2010); http://dx.doi.org/10.1063/1.3460528 (3 pages) | Cited 5 times

Online Publication Date: 7 July 2010

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We introduce single-carrier devices with electrical doped layers as a concept for the characterization of charge-carrier transport in organic semiconductors. In this approach, individual organic layers from a multilayer device are investigated in single-carrier test devices, where they are enclosed by symmetrically arranged electrical doped layers of equal thickness and composition. Single carrier devices without electrical doped layers are usually difficult to interpret due to an uncertainty about interface dipole effects between the metal contacts and pristine organic layers. In comparison, our devices show Ohmic contacts at the electrodes as well as zero built-in voltage and thus allow a more direct insight into charge-carrier transport. State-of-the-art simulation models are applied to analyze current-voltage characteristics and evaluate crucial parameters such as energy barriers between adjacent organic layers and mobilities.
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85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
73.40.Ns Metal-nonmetal contacts
05.60.-k Transport processes
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Carrier transport mechanisms of organic bistable devices fabricated utilizing colloidal ZnO quantum dot-polymethylmethacrylate polymer nanocomposites

Dong Ick Son, Chan Ho You, Jae Hun Jung, and Tae Whan Kim

Appl. Phys. Lett. 97, 013304 (2010); http://dx.doi.org/10.1063/1.3454774 (3 pages) | Cited 9 times

Online Publication Date: 7 July 2010

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Organic bistable devices (OBDs) fabricated utilizing ZnO quantum dots (QDs) embedded in a poly(methyl methacrylate) (PMMA) layer were fabricated by using a spin-coating technique. Transmission electron microscopy images revealed that 5-nm-diameter ZnO QDs were formed inside the PMMA polymer layer. Current-voltage (I-V) measurements on Al/ZnO QDs embedded in PMMA layer/indium-tin-oxide devices at 300 K showed electrical bistability. The maximum ON/OFF ratio of the current bistability for the OBDs was as large as 4×104. Carrier transport mechanisms for the OBDs are described by using several models to fit the experimental I-V data.
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84.30.Sk Pulse and digital circuits
81.07.Pr Organic-inorganic hybrid nanostructures
81.07.Ta Quantum dots
81.07.-b Nanoscale materials and structures: fabrication and characterization
82.70.Dd Colloids
72.20.Fr Low-field transport and mobility; piezoresistance
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
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Relation between the barrier interface and the built-in potential in pentacene/C60 solar cell

J. C. Nolasco, Antonio Sánchez-Díaz, R. Cabré, J. Ferré-Borrull, L. F. Marsal, E. Palomares, and J. Pallarès

Appl. Phys. Lett. 97, 013305 (2010); http://dx.doi.org/10.1063/1.3456393 (3 pages) | Cited 5 times

Online Publication Date: 7 July 2010

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The mechanisms limiting the dark current in pentacene (Pc)/C60 solar cell were determined using the temperature dependence of the current-density-voltage characteristics. Our analysis allowed us to calculate the effective barrier height for electrons and holes at the interface. We then determined the built-in potential of the heterojunction and the effective doping concentration of the active layers, using capacitance-voltage characteristics. These physical parameters were used to simulate a band-energy diagram for a Pc/C60 solar cell in equilibrium. Finally, we determined a relation between the effective barrier height and the built-in potential.
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88.40.H- Solar cells (photovoltaics)
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Negative differential resistance in hydrated deoxyribonucleic acid thin films mediated by diffusion-limited water redox reactions

H.-K. Lee and M. H.-C. Jin

Appl. Phys. Lett. 97, 013306 (2010); http://dx.doi.org/10.1063/1.3458810 (3 pages) | Cited 1 time

Online Publication Date: 8 July 2010

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dc I-V characteristics of DNA films under variable relative humidity (RH) were obtained showing an exponential increase in current with increasing RH from 20% to 85%. Protonic conduction was signified in details by the presence of a negative differential resistance (NDR) in highly hydrated films. NDR was seen when RH was over ∼ 70% at which the full coordination of DNA backbone with water molecules was expected. It is concluded that the protonic conduction is originated from water redox reactions and the NDR is the result of the limited diffusion of water on the surface of DNA molecules.
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87.15.Pc Electronic and electrical properties
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Threshold voltage control in organic thin film transistors with dielectric layer modified by a genetically engineered polypeptide

Alex Dezieck, Orb Acton, Kirsty Leong, Ersin Emre Oren, Hong Ma, Candan Tamerler, Mehmet Sarikaya, and Alex K.-Y. Jen

Appl. Phys. Lett. 97, 013307 (2010); http://dx.doi.org/10.1063/1.3459978 (3 pages) | Cited 9 times

Online Publication Date: 9 July 2010

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Precise control over the threshold voltage of pentacene-based organic thin film transistors was achieved by inserting a genetically engineered quartz-binding polypeptide at the semiconductor-dielectric interface. A 30 V range was accessed with the same peptide by adjusting the pH of the solution for peptide assembly while leaving other device properties unaffected. Mobility of 0.1–0.2 cm2 V−1 s−1 and on/off current ratio of >106 could be achieved for all devices regardless of the presence of the neutral peptide or the peptide assembled in acidic or basic conditions. This shift in threshold voltages is explained by the generation of charged species and dipoles due to variation in assembling conditions. Controlling device characteristics such as threshold voltage is essential for integration of transistors into electronic circuits.
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85.30.Tv Field effect devices
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
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Comparison of ultraviolet- and charge-induced degradation phenomena in blue fluorescent organic light emitting diodes

Ruben Seifert, Sebastian Scholz, Björn Lüssem, and Karl Leo

Appl. Phys. Lett. 97, 013308 (2010); http://dx.doi.org/10.1063/1.3460285 (3 pages) | Cited 3 times

Online Publication Date: 9 July 2010

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We compare the degradation of organic light emitting diodes (OLEDs) by UV light and by electrical driving. We prove that the exponential dependence of the half-lifetime on the current density known from electrical aging is also valid for UV-degradation. The influence of excitons on the degradation of OLEDs is determined and we experimentally distinguish between the influence of singlet and triplet excitons. We conclude that singlet excitons are the main cause of degradation for Spiro-DPVBi(2,2′,7,7′-tetrakis(2,2-diphenylvinyl)spiro-9,9′-bifluorene)-based OLEDs by a comparison of the degradation of electrically driven and UV-excited OLEDs.
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85.60.Jb Light-emitting devices
78.55.-m Photoluminescence, properties and materials
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