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Applied Physics Letters / Volume 97 / Issue 2 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 97, 021905 (2010); http://dx.doi.org/10.1063/1.3457172 (3 pages)

Determination of band gap energy (Eg) of Cu2ZnSnSe4 thin films: On the discrepancies of reported band gap values

SeJin Ahn1, Sunghun Jung1, Jihye Gwak1, Ara Cho1, Keeshik Shin1, Kyunghoon Yoon1, Doyoung Park2, Hyeonsik Cheong2, and Jae Ho Yun1

1Photovoltaic Research Center, Korea Institute of Energy Research, 71–2 Jangdong, Yuseonggu, Daejeon, 305–343, Republic of Korea
2Department of Physics, Sogang University, Seoul 121-742, Republic of Korea

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(Received 9 April 2010; accepted 28 May 2010; published online 13 July 2010; corrected 22 July 2010)

We demonstrate experimental data to elucidate the reason for the discrepancies of reported band gap energy (Eg) of Cu2ZnSnSe4 (CZTSe) thin films, i.e., 1.0 or 1.5 eV. Eg of the coevaporated CZTSe film synthesized at substrate temperature (Tsub) of 370 °C, which was apparently phase pure CZTSe confirmed by x-ray diffraction (XRD) and Raman spectroscopy, is found to be around 1 eV regardless of the measurement techniques. However, depth profile of the same sample reveals the formation of ZnSe at CZTSe/Mo interface. On the other hand, Eg of the coevaporated films increases with Tsub due to the ZnSe formation, from which we suggest that the existence of ZnSe, which is hardly distinguishable from CZTSe by XRD, is the possible reason for the overestimation of overall Eg.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

copper compounds, energy gap, evaporation, Raman spectroscopy, semiconductor thin films, X-ray diffraction, zinc compounds

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3457172

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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    References

    S. Chen, X. G. Gong, A. Walsh, and S. H. Wei, Appl. Phys. Lett. 94, 041903 (2009)APPLAB000094000004041903000001.

    M. L. Liu, F. Q. Huang, L. D. Chen, and I. W. Chen, Appl. Phys. Lett. 94, 202103 (2009)APPLAB000094000020202103000001.

    S. Chen, X. G. Gong, A. Walsh, and S. H. Wei, Appl. Phys. Lett. 96, 021902 (2010)APPLAB000096000002021902000001.


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