APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 97 / Issue 2 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 97, 022104 (2010); http://dx.doi.org/10.1063/1.3464323 (3 pages)

Band structure engineering of ZnO1−xSex alloys

Marie A. Mayer1,2, Derrick T. Speaks1,2, Kin Man Yu1, Samuel S. Mao3, Eugene E. Haller1,2, and Wladek Walukiewicz1

1Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
2Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, California 94720, USA
3Environmental Energy Technologies Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA and Department of Mechanical Engineering, University of California at Berkeley, Berkeley, California 94720, USA

View MapView Map

(Received 7 June 2010; accepted 23 June 2010; published online 13 July 2010)

ZnO1−xSex alloys with Se substitutional composition x<0.12 were synthesized using pulsed laser deposition. Incorporation of small concentrations of Se results in a greater than 1 eV red shift in the ZnO optical absorption edge which is quantitatively explained in the framework of the band anticrossing model. The Se defect level is found to be located at 0.9 eV above the ZnO valence band and the band anticrossing coupling constant is determined to be 1.2 eV. These parameters allow prediction of the composition dependence of the band gap as well as the conduction and the valence band offsets in the full composition range of ZnO1−xSex alloys.

© 2010 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

absorption coefficients, conduction bands, defect states, energy gap, energy level crossing, II-VI semiconductors, pulsed laser deposition, Rutherford backscattering, semiconductor thin films, spectral line shift, valence bands, X-ray diffraction, zinc compounds

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3464323

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    W. Shan, W. Walukiewicz, J. W. Ager III, E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson, and S. R. Kurtz, Phys. Rev. Lett. 82, 1221 (1999).

    K. M. Yu, W. Walukiewicz, J. Wu, W. Shan, J. W. Beeman, M. A. Scarpulla, O. D. Dubon, and P. Becla, Phys. Rev. Lett. 91, 246403 (2003).

    M. D. McCluskey and S. J. Jokela, J. Appl. Phys. 106, 071101 (2009)JAPIAU000106000007071101000001.

    V. Srikant and D. R. Clarke, J. Appl. Phys. 83, 5447 (1998)JAPIAU000083000010005447000001.

    K. M. Yu, S. V. Novikov, R. Broesler, I. N. Demchenko, J. D. Denlinger, Z. Liliental-Weber, F. Luckert, R. W. Martin, W. Walukiewicz, and C. T. Foxon, J. Appl. Phys. 106, 103709 (2009)JAPIAU000106000010103709000001.

    J. Wu, W. Walukiewicz, K. M. Yu, J. D. Denlinger, W. Shan, J. W. Ager, A. Kimura, H. F. Tang, and T. F. Kuech, Phys. Rev. B 70, 115214 (2004).

    M. Cardona, Phys. Rev. 129, 69 (1963).

    J. Wu, W. Walukiewicz, and E. E. Haller, Phys. Rev. B 65, 233210 (2002).

    R. Broesler, E. E. Haller, W. Walukiewicz, T. Muranaka, T. Matsumoto, and Y. Nabetani, Appl. Phys. Lett. 95, 151907 (2009)APPLAB000095000015151907000001.


For access to citing articles, you need to log in.


Figures (3)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Band structure engineering of ZnO1−xSex alloys
  2. Ultrafast carrier and phonon dynamics in Bi2Se3 crystals
  3. InGaN/GaN self-organized quantum dot green light emitting diodes with reduced efficiency droop
  4. Kinetics of catalyst size dependent carbon nanotube growth by growth interruption studies
  5. Superhydrophilic TiO2 surface without photocatalytic activation
Go to AIP Home
Copyright © American Institute of Physics
close