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Applied Physics Letters / Volume 97 / Issue 2 / DEVICE PHYSICS

Appl. Phys. Lett. 97, 023513 (2010); http://dx.doi.org/10.1063/1.3462929 (3 pages)

Nanostructure band engineering of gadolinium oxide nanocrystal memory by CF4 plasma treatment

Jer-Chyi Wang, Chih-Ting Lin, Chao-Sung Lai, and Jui-Lin Hsu

Department of Electronic Engineering, Chang Gung University, Kweishan, 333 Taoyuan, Taiwan

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(Received 15 February 2010; accepted 18 June 2010; published online 16 July 2010)

Nanostructure band engineering accomplished by CF4 plasma treatment on Gd2O3 nanocrystal memory was investigated. Under the CF4 plasma treatment, the fluorine was incorporated into the Gd2O3 film and resulted in the modification of energy-band. A physical model was proposed to explain the relationship between the built-in electric field in Gd2O3 nanostructure and the improved program/erase (P/E) efficiency and data retention characteristics. The memory window of the Gd2O3–NC memory with CF4 plasma treatment and postplasma annealing was increased to 3.4 V after 104 P/E cycling. It is demonstrated that the Gd2O3–NC memory with nanostructure band engineering is promising for future nonvolatile memory application.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

annealing, gadolinium compounds, nanostructured materials, nanotechnology, plasma materials processing, random-access storage

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3462929

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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