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Applied Physics Letters / Volume 97 / Issue 20 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 97, 202105 (2010); http://dx.doi.org/10.1063/1.3518070 (3 pages)

Photon energy threshold for filling boron induced charge traps in SiO2 near the Si/SiO2 interface using second harmonic generation

Heungman Park1, Ying Xu1,2, Kalman Varga1, Jingbo Qi1,3, Leonard C. Feldman1,4, Gunter Lüpke5, and Norman Tolk1

1Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA
2Zomega Terahertz Corporation, Troy, New York 12180, USA
3Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
4Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, New Brunswick, New Jersey 08901, USA
5Department of Applied Science, College of William and Mary, Williamsburg, Virginia 23187, USA

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(Received 24 August 2010; accepted 27 October 2010; published online 17 November 2010)

We report the experimental determination of the threshold energy for filling the B+ induced charge traps in SiO2 near the Si/SiO2 interface, using a two-color pump-probe approach involving internal photoemission and second harmonic generation. The threshold photon energy for filling the B+ induced charge trap is 2.61 eV (λ = 475 nm) for single photon excitation between the silicon valence band and the B+ trap energy level in SiO2.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

electron traps, energy states, hole traps, optical harmonic generation, photoemission, silicon, silicon compounds, valence bands

PACS

  • 79.60.-i

    Photoemission and photoelectron spectra

  • 73.20.At

    Surface states, band structure, electron density of states

  • 42.65.Ky

    Frequency conversion; harmonic generation, including higher-order harmonic generation

  • 72.20.Jv

    Charge carriers: generation, recombination, lifetime, and trapping

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3518070

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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