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Applied Physics Letters / Volume 97 / Issue 20 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 97, 203103 (2010); http://dx.doi.org/10.1063/1.3514239 (3 pages)

Compositional evolution of SiGe islands on patterned Si (001) substrates

Jianjun Zhang1,2, Armando Rastelli2, Oliver G. Schmidt2, and Günther Bauer1

1Institute of Semiconductor and Solid State Physics, University Linz, A-4040 Linz, Austria
2Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden, Germany

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(Received 17 September 2010; accepted 19 October 2010; published online 15 November 2010)

The authors investigate, by atomic-force-microscopy-based nanotomography, the composition evolution of ordered SiGe islands grown on pit-patterned Si (001) substrates as their size and aspect ratio increase with increasing Ge deposition. Compared to islands grown on flat substrates, the ordered island arrays show improved size, shape, and compositional homogeneity. The three-dimensional composition profiles of individual pyramids, domes, and barns reveal that the Ge fraction at the base and in subsurface regions of the islands decreases with increasing amount of deposited Ge.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

atomic force microscopy, Ge-Si alloys, internal stresses, island structure, molecular beam epitaxial growth, nanofabrication, nanopatterning, nanostructured materials, semiconductor epitaxial layers, semiconductor growth, semiconductor materials

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3514239

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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