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Applied Physics Letters / Volume 97 / Issue 21 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 97, 211103 (2010); http://dx.doi.org/10.1063/1.3518715 (3 pages)

Ultrafast gain dynamics in InP quantum-dot optical amplifiers

Wolfgang Langbein1, Valentina Cesari1, Francesco Masia1, Andrey B. Krysa2, Paola Borri1,3, and Peter M. Smowton1

1School of Physics and Astronomy, Cardiff University, The Parade, Cardiff CF24 3AA, United Kingdom
2EPSRC National Centre for III-V Technologies, University of Sheffield, Sheffield S1 3JD, United Kingdom
3School of Biosciences, Cardiff University, Museum Avenue, Cardiff CF10 3AX, United Kingdom

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(Received 16 October 2010; accepted 2 November 2010; published online 22 November 2010)

We measured the gain dynamics at the ground-state transition in an electrically pumped InP/AlGaInP quantum-dot optical amplifier at room temperature by femtosecond differential transmission. The gain shows an ultrafast recovery within 200 fs, even faster than in state-of-the-art InAs/GaAs quantum-dot amplifiers. This finding, likely to be due to the less confined and more closely spaced hole levels in InP dots, is promising for optical signal processing at high bit rates. We furthermore measured the pump-induced refractive index changes and deduced a linewidth enhancement factor similar to the one in InAs/GaAs quantum dots.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, gallium compounds, ground states, high-speed optical techniques, III-V semiconductors, indium compounds, optical pumping, quantum dot lasers

PACS

  • 42.55.Px

    Semiconductor lasers; laser diodes

  • 42.60.By

    Design of specific laser systems

  • 42.65.Re

    Ultrafast processes; optical pulse generation and pulse compression

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3518715

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    G. Walter, J. Elkow, N. Holonyak, Jr., R. D. Heller, X. B. Zhang, and R. D. Dupuis, Appl. Phys. Lett. 84, 666 (2004)APPLAB000084000005000666000001.

    W. -M. Schulz, R. Rossbach, M. Reischle, G. J. Beirne, M. Bommer, M. Jetter, and P. Michler, Phys. Rev. B 79, 035329 (2009).

    J. Lutti, P. M. Smowton, G. M. Lewis, P. Blood, A. B. Krysa, J. C. Lin, P. A. Houston, A. J. Ramsay, and D. J. Mowbray, Appl. Phys. Lett. 86, 011111 (2005)APPLAB000086000001011111000001.

    J. Persson, M. Holm, C. Pryor, D. Hessman, W. Seifert, L. Samuelson, and M. -E. Pistol, Phys. Rev. B 67, 035320 (2003).

    V. Cesari, W. Langbein, P. Borri, M. Rossetti, A. Fiore, S. Mikhrin, I. Krestnikov, and A. Kovsh, Appl. Phys. Lett. 90, 201103 (2007)APPLAB000090000020201103000001.

    C. Pryor, M. -E. Pistol, and L. Samuelson, Phys. Rev. B 56, 10404 (1997).


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