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Applied Physics Letters / Volume 97 / Issue 21 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 97, 211104 (2010); http://dx.doi.org/10.1063/1.3521277 (3 pages)

Silicon emitter for shortwave infrared (1.6–3 μm) band by light down-conversion

V. K. Malyutenko, V. V. Bogatyrenko, and A. M. Tykhonov

Lashkaryov Institute of Semiconductor Physics, Pr. Nauki 41, Kiev 03028, Ukraine

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(Received 14 July 2010; accepted 4 November 2010; published online 22 November 2010)

No silicon-based light emitting diodes exist for shortwave infrared (1.6–3.0 μm) band due to bandgap limitations imposed on luminescence wavelengths. To alleviate this problem, we propose a photonic device in which below-bandgap radiation comes as the result of the thermal emission enhanced by free charge carriers generated by the above-bandgap excitation (light downconversion). With this approach, we demonstrate high-temperature (T>300 K) large-area (20×20 mm2) Si emitter with stable high-power output ( ∼ 100 mW/cm2) and prescribed spectrum inside the 1.6–3 μm band for applications such as dynamic scene simulation devices operating at frequencies above 1 kHz.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

elemental semiconductors, energy gap, infrared sources, light emitting diodes, optical frequency conversion, silicon, thermoluminescence

PACS

  • 85.60.Jb

    Light-emitting devices

  • 42.65.Ky

    Frequency conversion; harmonic generation, including higher-order harmonic generation

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3521277

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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