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Applied Physics Letters / Volume 97 / Issue 21 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 97, 211106 (2010); http://dx.doi.org/10.1063/1.3520525 (3 pages)

Influence of carrier dynamics on the modulation bandwidth of quantum-dot based nanocavity devices

M. Lorke, T. R. Nielsen, and J. Mørk

DTU Fotonik, Department of Photonics Engineering, Technical University of Denmark, Building 343, Kgs. Lyngby, Copenhagen 2800, Denmark

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(Received 16 September 2010; accepted 5 November 2010; published online 23 November 2010)

We theoretically investigate the modulation response of quantum-dot based nanocavity light emitting devices. For high Purcell enhancement factors, our theory predicts the possibility of decreasing the modulation bandwidth with increasing scattering rate into the lasing quantum-dot state. This counterintuitive effect is investigated using a microscopic semiconductor model. The resulting guidelines for possible optimizations of quantum-dot based nanocavity laser devices are given.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

light emitting diodes, quantum dot lasers, semiconductor quantum dots

PACS

  • 42.55.Px

    Semiconductor lasers; laser diodes

  • 42.60.By

    Design of specific laser systems

  • 85.35.-p

    Nanoelectronic devices

  • 72.20.Fr

    Low-field transport and mobility; piezoresistance

  • 85.60.Jb

    Light-emitting devices

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3520525

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    J. Seebeck, T. Nielsen, P. Gartner, and F. Jahnke, Phys. Rev. B 71, 125327 (2005).

    T. Markussen, P. Kristensen, B. Tromborg, T. W. Berg, and J. Mørk, Phys. Rev. B 74, 195342 (2006).


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