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Appl. Phys. Lett. 97, 211111 (2010); http://dx.doi.org/10.1063/1.3518473 (3 pages)

A low-noise, single-photon avalanche diode in standard 0.13 μm complementary metal-oxide-semiconductor process

Ryan M. Field1, Jenifer Lary2, John Cohn2, Liam Paninski3, and Kenneth L. Shepard1

1Department of Electrical Engineering, Columbia University, New York, New York 10027, USA
2IBM STG, Essex Junction, Vermont 05452, USA
3Department of Statistics, Columbia University, New York, New York 10027, USA

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(Received 10 September 2010; accepted 29 October 2010; published online 24 November 2010)

We present the design and characterization of a single-photon avalanche diode (SPAD) fabricated with a standard 0.13 μm complementary metal-oxide-semiconductor process. We have developed a figure of merit for SPADs when these detectors are employed in high frame-rate fluorescent lifetime imaging microscopy, which allows us to specify an optimal bias point for the diode and compare our diode with other published devices. At its optimum bias point at room temperature, our SPAD achieves a photon detection probability of 29% while exhibiting a dark count rate of only 231 Hz and an impulse response of 198 ps.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 85.60.Dw

    Photodiodes; phototransistors; photoresistors

  • 85.60.Gz

    Photodetectors (including infrared and CCD detectors)

  • 42.79.Pw

    Imaging detectors and sensors

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
    A. Rochas, M. Gani, B. Furrer, P. A. Besse, R. S. Popovic, G. Ribordy, and N. Gisin, Rev. Sci. Instrum. 74, 3263 (2003)RSINAK000074000007003263000001.

    H. Finkelstein, M. Hsu, S. Zlatanovic, and S. Esener, Rev. Sci. Instrum. 78, 103103 (2007)RSINAK000078000010103103000001.


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