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Appl. Phys. Lett. 97, 211901 (2010); http://dx.doi.org/10.1063/1.3518480 (3 pages)

Deep level related photoluminescence in ZnMgO

M. Trunk, V. Venkatachalapathy, A. Galeckas, and A. Yu. Kuznetsov

Department of Physics/Center for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo, Norway

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(Received 7 October 2010; accepted 28 October 2010; published online 22 November 2010)

Optically active deep levels were investigated in ZnMgO layers using temperature dependent photoluminescence. The samples, grown on c-plane sapphire by metal-organic vapor phase epitaxy, exhibited Mg contents ranging from 0% to 8.5% leading to a gradual band gap broadening. The deep level luminescence was found to consist of several emission components centered at 2, 2.3, 2.5, 2.8, and 3 eV. With increasing Mg concentration, the bands at 2.8 and 3eV were found to blueshift, the bands at 2.3 and 2.5eV redshift, while the band at 2 eV holds its position. A model is suggested explaining the deep level luminescence shift trends in terms of interaction of native Zn and O sublattice defects with the introduced Mg interstitials.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 78.66.Hf

    II-VI semiconductors

  • 78.55.Et

    II-VI semiconductors

  • 71.55.Gs

    II-VI semiconductors

  • 68.55.ag

    Semiconductors

  • 81.15.Kk

    Vapor phase epitaxy; growth from vapor phase

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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