• Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Appl. Phys. Lett. 97, 211903 (2010); http://dx.doi.org/10.1063/1.3521255 (3 pages)

The electronic structure of β-Ga2O3

M. Mohamed1, C. Janowitz1, I. Unger1, R. Manzke1, Z. Galazka2, R. Uecker2, R. Fornari2, J. R. Weber3, J. B. Varley3, and C. G. Van de Walle3

1Institut für Physik, Humboldt-Universität zu Berlin, Newtonstr. 15, Berlin 12489, Germany
2Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, Berlin 12489, Germany
3Department of Materials, University of California, Santa Barbara, California 93106-5050, USA

View MapView Map

(Received 21 July 2010; accepted 4 November 2010; published online 22 November 2010)

β-Ga2O3 has the widest energy gap of the transparent conducting oxides. The interest in its electronic properties has recently increased because of its applications in various optoelectronic devices, semiconductor lasers, and ultrasensitive gas detecting systems. In contrast, information on the electronic structure of β-Ga2O3 is very scarce. Here, we present the experimental valence-band structure of β-Ga2O3 single crystals determined by high-resolution angle-resolved photoelectron spectroscopy utilizing synchrotron radiation. We find good matching of the experimental band structure with the advanced density functional theory calculations employing hybrid functionals and projector augmented wave potentials.

© 2010 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

PACS

  • 71.20.Ps

    Other inorganic compounds

  • 71.15.Mb

    Density functional theory, local density approximation, gradient and other corrections

  • 79.60.-i

    Photoemission and photoelectron spectra

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
    T. C. Lovejoy, E. N. Yitamben, N. Shamir, J. Morales, E. G. Villora, K. Shimamura, S. Zheng, F. S. Ohuchi, and M. A. Olmstead, Appl. Phys. Lett. 94, 081906 (2009)APPLAB000094000008081906000001.

    J. Heyd, G. E. Scuseria, and M. Ernzerhof, J. Chem. Phys. 118, 8207 (2003)JCPSA6000118000018008207000001.

    M. Orita, H. Ohta, M. Hirano, and H. Hosono, Appl. Phys. Lett. 77, 4166 (2000)APPLAB000077000025004166000001.

    H. He, M. A. Blanco, and R. Pandey, Appl. Phys. Lett. 88, 261904 (2006)APPLAB000088000026261904000001.


Figures (3)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close
Google Calendar
ADVERTISEMENT

close