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Appl. Phys. Lett. 97, 211904 (2010); http://dx.doi.org/10.1063/1.3518493 (3 pages)

Effects of applied electrical field on electronic structures in LaNiO3 conductive metallic oxide film: An optical spectroscopic study

J. J. Zhu (诸佳俊), W. W. Li (李文武), Y. W. Li (李亚巍), Y. D. Shen (沈育德), Z. G. Hu (胡志高), and J. H. Chu (褚君浩)

Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, People’s Republic of China

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(Received 27 July 2010; accepted 30 October 2010; published online 22 November 2010)

The reflectance spectra of LaNiO3 film on silicon have been investigated in the wavelength range of 190–2650 nm (0.47–6.5 eV) under different external direct-current voltage. The Drude–Lorentz dispersion model is used to extract the optical function. The O 2p to Ni 3d electronic transition can be uniquely assigned to the energy of about 1.96 eV and decreases with decreasing applied voltage. The discrepancy from the real part of dielectric function with the applied voltage has a strong spectral dependence. The optical conductivity variation under different external voltage indicates that the electrical field can induce the modification of the carrier transport.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 78.66.Nk

    Insulators

  • 73.61.Ng

    Insulators

  • 78.20.Ci

    Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

  • 68.55.-a

    Thin film structure and morphology

  • 61.46.Df

    Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

  • 82.70.-y

    Disperse systems; complex fluids

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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