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Applied Physics Letters / Volume 97 / Issue 21 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 97, 211905 (2010); http://dx.doi.org/10.1063/1.3519361 (3 pages)

VO2 multidomain heteroepitaxial growth and terahertz transmission modulation

Changhong Chen1,2, Yanhan Zhu1, Yong Zhao1, Joon Hwan Lee3, Haiyan Wang3, Ayrton Bernussi1, Mark Holtz4, and Zhaoyang Fan1

1Department of Electrical and Computer Engineering and Nano Tech Center, Texas Tech University, Lubbock, Texas 79409-3102, USA
2Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, People’s Republic of China
3Department of Electrical Engineering, Texas A&M University, College Station, Texas 77843, USA
4Department of Physics and Nano Tech Center, Texas Tech University, Lubbock, Texas 79409-1051, USA

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(Received 31 August 2010; accepted 1 November 2010; published online 23 November 2010)

We report the epitaxial relationship of VO2 thin-films on c-plane sapphire and their terahertz transmission modulation with temperature. The films exhibit a triple-domain structure caused by the lattice mismatch between monoclinic VO2 and sapphire hexagon. The epitaxial relationship is determined to be VO2[010]∥Al2O3[0001] and VO2(math02)∥Al2O3{11math0}, with the in-plane lattice mismatch of 2.66% (tensile) along [math02] and the out-of-plane lattice mismatch of −2.19% (compressive). Terahertz measurements revealed that VO2 films have over fourfold change in transmission during the metal-insulator transition, indicating a strong potential for terahertz wave switching and modulation applications.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

epitaxial growth, epitaxial layers, metal-insulator transition, microwave materials, terahertz wave spectra, vanadium compounds

PACS

  • 72.60.+g

    Mixed conductivity and conductivity transitions

  • 71.30.+h

    Metal-insulator transitions and other electronic transitions

  • 84.40.-x

    Radiowave and microwave (including millimeter wave) technology

  • 68.55.A-

    Nucleation and growth

  • 78.70.Gq

    Microwave and radio-frequency interactions

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3519361

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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