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Applied Physics Letters / Volume 97 / Issue 21 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 97, 211907 (2010); http://dx.doi.org/10.1063/1.3522886 (3 pages)

Thermal stability of the OH–Li complex in hydrothermally grown single crystalline ZnO

K. M. Johansen, H. Haug, E. Lund, E. V. Monakhov, and B. G. Svensson

Centre for Materials Science and Nanotechnology, University of Oslo, 0318 Oslo, Norway

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(Received 15 October 2010; accepted 10 November 2010; published online 24 November 2010)

The thermal stability of the prominent 3577 cm−1 infrared absorption band in ZnO, assigned to an O–H stretch mode adjacent to a Li atom on Zn site (LiZn), is studied. Employing slow sample cooling after annealing, the 3577 cm−1 peak remains at temperatures ≤ 1250 °C, consistent with previous reports. However, if the samples are cooled rapidly by quenching, the peak disappears after annealing for 1 h at 650 °C. A dissociation energy of less than 2.5 eV is deduced for the OH–LiZn complex and the apparent high thermal stability after slow cooling is attributed to efficient recapturing of H by LiZn. Moreover, deuterium (D) is found to replace hydrogen in OH–LiZn after 1 h at 700 °C in D2 gas.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

annealing, dissociation, II-VI semiconductors, infrared spectra, quenching (thermal), thermal stability, wide band gap semiconductors, zinc compounds

PACS

  • 78.30.Fs

    III-V and II-VI semiconductors

  • 61.72.Cc

    Kinetics of defect formation and annealing

  • 82.30.Lp

    Decomposition reactions (pyrolysis, dissociation, and fragmentation)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3522886

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    L. Vines, E. V. Monakhov, R. Schifano, W. Mtangi, F. D. Auret, and B. G. Svensson, J. Appl. Phys. 107, 103707 (2010)JAPIAU000107000010103707000001.

    C. G. Van de Walle, Phys. Rev. Lett. 85, 1012 (2000).

    A. R. Hutson, Phys. Rev. 108, 222 (1957).

    L. E. Halliburton, L. Wang, L. Bai, N. Y. Garces, N. C. Giles, M. J. Callahan, and B. Wang, J. Appl. Phys. 96, 7168 (2004)JAPIAU000096000012007168000001.

    G. A. Shi, M. Stavola, and W. B. Fowler, Phys. Rev. B 73, 081201 (2006).

    E. V. Lavrov, J. Weber, F. Börrnert, C. G. Van de Walle, and R. Helbig, Phys. Rev. B 66, 165205 (2002).

    Y. J. Li, B. Zhang, and W. Lu, J. Appl. Phys. 105, 093516 (2009)JAPIAU000105000009093516000001.

    E. V. Lavrov, F. Börrnert, and J. Weber, Phys. Rev. B 71, 035205 (2005).

    K. M. Johansen, J. S. Christensen, E. V. Monakhov, A. Y. Kuznetsov, and B. G. Svensson, Appl. Phys. Lett. 93, 152109 (2008)APPLAB000093000015152109000001.

    D. G. Thomas and J. J. Lander, J. Chem. Phys. 25, 1136 (1956)JCPSA6000025000006001136000001.

    E. V. Lavrov and J. Weber, J. Appl. Phys. 106, 086104 (2009)JAPIAU000106000008086104000001.


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