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Applied Physics Letters / Volume 97 / Issue 21 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 97, 212101 (2010); http://dx.doi.org/10.1063/1.3520493 (3 pages)

Abnormal humidity-dependent electrical properties of amorphous carbon/silicon heterojunctions

Xili Gao, Xiaozhong Zhang, Caihua Wan, Xin Zhang, Lihua Wu, and Xinyu Tan

Department of Materials Science and Engineering, Laboratory of Advanced Materials, Tsinghua University, Beijing 100084, People’s Republic of China and National Center for Electron Microscopy (Beijing), Tsinghua University, Beijing 100084, People’s Republic of China

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(Received 17 June 2010; accepted 4 November 2010; published online 22 November 2010)

Amorphous carbon (a-C) film/n-Si heterojunctions have been fabricated by pulse laser deposition, and their current-voltage characteristics have been investigated. The results show that the atmosphere relative humidity (RH) has a significant effect on the reverse bias I-V characteristics of the heterojunctions. For the low bias voltages, the resistance of the a-C/Si heterojunction decreases with the increase of the RH. However, when the applied voltage is greater than a threshold, the resistance of the a-C/Si heterojunctions increases with the increase of the RH. This humidity-dependent phenomenon is attributed to the charge transfer from the absorbed H2O molecular to a-C film.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

amorphous state, carbon, charge exchange, electrical resistivity, elemental semiconductors, humidity, pulsed laser deposition, semiconductor junctions, silicon, thin films

PACS

  • 73.40.Lq

    Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

  • 82.30.Fi

    Ion-molecule, ion-ion, and charge-transfer reactions

  • 81.15.Fg

    Pulsed laser ablation deposition

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3520493

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    X. L. Gao, Q. Z. Xue, L. Z. Hao, Q. B. Zheng, and Q. Li, Appl. Phys. Lett. 91, 122110 (2007)APPLAB000091000012122110000001.

    Q. Z. Xue, X. Zhang, P. Tian, and C. Jin, Appl. Phys. Lett. 85, 4397 (2004)APPLAB000085000019004397000001.

    A. Zahab, L. Spina, P. Poncharal, and C. Marliere, Phys. Rev. B 62, 10000 (2000).


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