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Applied Physics Letters / Volume 97 / Issue 21 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 97, 212103 (2010); http://dx.doi.org/10.1063/1.3511756 (3 pages)

Electrical bistability in hybrid ZnO nanorod/polymethylmethacrylate heterostructures

Zong-Liang Tseng1, Po-Ching Kao2, Meng-Fu Shih1, Hsin-Hsuan Huang1, Jing-Yuan Wang2, and Sheng-Yuan Chu1,3,4

1Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan
2Department of Electrophysics, National Chiayi University, Chiayi, 600-83 Taiwan, Republic of China
3Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan
4Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan

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(Received 8 July 2010; accepted 16 October 2010; published online 23 November 2010)

A hybrid resistance switching device consisting of ZnO nanorods embedded in an insulating polymethylmethacrylate (PMMA) heterostructure sandwiched between a transparent conductive film and an Al electrode is proposed. The current-voltage characteristics of the device are discussed in terms of the formation and rupture of its conductive filaments. The hybrid device shows stable electrical bistable behaviors after more than 200 resistance-switching cycles. The hybrid ZnO nanorod/PMMA device presented in this work has potential applications in the field of bistable random access memory devices.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium, electrodes, II-VI semiconductors, nanorods, polymers, random-access storage, thin films, wide band gap semiconductors, zinc compounds

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3511756

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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