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Applied Physics Letters / Volume 97 / Issue 22 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 97, 222110 (2010); http://dx.doi.org/10.1063/1.3523358 (3 pages)

High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers

Guowang Li, Yu Cao, Huili Grace Xing, and Debdeep Jena

Department of Electrical Engineering, University of Notre Dame, Indiana 46556, USA

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(Received 22 October 2010; accepted 11 November 2010; published online 1 December 2010)

We report high-electron mobility nitride heterostructures with >70% Al composition AlGaN alloy barriers grown by molecular beam epitaxy. Direct growth of such AlGaN layers on GaN resulted in hexagonal trenches and a low mobility polarization-induced charge. By applying growth interruption at the heterojunction, the surface morphology improved dramatically and the room temperature two-dimensional electron gas (2DEG) mobility increased by an order of magnitude, exceeding 1300 cm2/V s. The 2DEG density was tunable at 0.4–3.7×1013/cm2 by varying the total barrier thickness (t). Surface barrier heights of the heterostructures were extracted and exhibited dependence on t.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

electron mobility, III-V semiconductors, molecular beam epitaxial growth, semiconductor heterojunctions, surface morphology, two-dimensional electron gas, wide band gap semiconductors

PACS

  • 72.20.Ht

    High-field and nonlinear effects

  • 81.15.Hi

    Molecular, atomic, ion, and chemical beam epitaxy

  • 68.55.ag

    Semiconductors

  • 68.47.-b

    Solid-gas/vacuum interfaces: types of surfaces

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3523358

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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