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Applied Physics Letters / Volume 97 / Issue 22 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 97, 222116 (2010); http://dx.doi.org/10.1063/1.3521258 (3 pages)

Polarization-mediated remote surface roughness scattering in ultrathin barrier GaN high-electron mobility transistors

Yu Cao, Huili Xing, and Debdeep Jena

Department of Electrical Engineering, University of Notre Dame, Indiana 46556, USA

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(Received 26 October 2010; accepted 5 November 2010; published online 2 December 2010)

Ultrathin AlN/GaN heterojunctions are highly attractive for high-frequency transistor applications. In this work, remote surface roughness (RSR) scattering mediated by the high polarization is studied as a new scattering mechanism in such structures. In both depletion-mode and enhancement-mode devices with ultrathin AlN barriers, RSR scattering can be of the same order as polar optical phonons, the dominant scattering mechanism at room temperature. The study indicates that to achieve high-performance high-electron mobility transistors, the surface roughness during processing is as critical as maintaining a sharp heterojunction.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, gallium compounds, high electron mobility transistors, III-V semiconductors, phonons, surface roughness

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3521258

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    Y. Cao and D. Jena, Appl. Phys. Lett. 90, 182112 (2007)APPLAB000090000018182112000001.

    J. Li and T. -P. Ma, J. Appl. Phys. 62, 4212 (1987)JAPIAU000062000010004212000001.

    S. Saito, K. Torii, Y. Shimamoto, S. Tsujikawa, H. Hamamura, O. Tonomura, T. Mine, D. Hisamoto, T. Onai, J. Yugami, M. Hiratani, and S. Kimura, Appl. Phys. Lett. 84, 1395 (2004)APPLAB000084000008001395000001.

    B. Ridley, W. Schaff, and L. Eastman, J. Appl. Phys. 94, 3972 (2003)JAPIAU000094000006003972000001.


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