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Applied Physics Letters / Volume 97 / Issue 22 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 97, 223109 (2010); http://dx.doi.org/10.1063/1.3524215 (2 pages)

Epitaxial growth of a silicene sheet

Boubekeur Lalmi1, Hamid Oughaddou2,3, Hanna Enriquez2,4, Abdelkader Kara5,3, Sébastien Vizzini6, Bénidicte Ealet1, and Bernard Aufray1

1CINaM-CNRS, Campus de Luminy, Case 913, Marseille 13288, France
2CEA, DSM-IRAMIS-SPCSI, Bât. 462, Saclay, Gif-sur-Yvette 91191, France
3Département de Physique, Université de Cergy-Pontoise, Cergy-Pontoise 95000, France
4Département de Physique, Université Paris-Sud, Orsay Cedex 91405, France
5Department of Physics, University of Central Florida, Orlando, Florida 32816, USA
6IM2NP, Faculté des Sciences de Saint-Jérôme, Aix-Marseille Université, Case 142, Marseille 13397, France

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(Received 19 October 2010; accepted 11 November 2010; published online 2 December 2010)

Using atomic resolved scanning tunneling microscopy, we present here the experimental evidence of a silicene sheet (graphenelike structure) epitaxially grown on a close-packed silver surface [Ag(111)]. This has been achieved via direct condensation of a silicon atomic flux onto the single-crystal substrate in ultrahigh vacuum conditions. A highly ordered silicon structure, arranged within a honeycomb lattice, is synthesized and present two silicon sublattices occupying positions at different heights (0.02 nm) indicating possible sp2-sp3 hybridizations.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

condensation, elemental semiconductors, scanning tunnelling microscopy, semiconductor epitaxial layers, semiconductor growth, silicon, vapour phase epitaxial growth

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3524215

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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    References

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