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29 Nov 2010

Volume 97, Issue 22, Articles (22xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 97, 223101 (2010); http://dx.doi.org/10.1063/1.3519844 (3 pages)

Jin-Kyu Yang, Svetlana V. Boriskina, Heeso Noh, Michael J. Rooks, Glenn S. Solomon, Luca Dal Negro, and Hui Cao
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Extreme dielectric strength in boron doped homoepitaxial diamond

Pierre-Nicolas Volpe, Pierre Muret, Julien Pernot, Franck Omnès, Tokuyuki Teraji, Yasuo Koide, François Jomard, Dominique Planson, Pierre Brosselard, Nicolas Dheilly, Bertrand Vergne, and Sigo Scharnholz

Appl. Phys. Lett. 97, 223501 (2010); http://dx.doi.org/10.1063/1.3520140 (3 pages) | Cited 3 times

Online Publication Date: 29 November 2010

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The fabrication of Schottky diodes withstanding breakdown voltages up to 10 kV is demonstrated. A corresponding electric field of 7.7 MV/cm at the center of the diode is evaluated with the help of a two-dimensional finite elements software. These properties result from a net shallow acceptor concentration below 1016 cm−3 in the first micrometers of an epitaxial film with optimized crystalline quality and a special oxidizing treatment of its surface, allowing the true dielectric strength of bulk diamond to be revealed.
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81.05.ug Diamond
81.65.Mq Oxidation
85.30.Kk Junction diodes
81.05.Cy Elemental semiconductors
77.22.Jp Dielectric breakdown and space-charge effects
61.66.Fn Inorganic compounds

Field-induced strain degradation of AlGaN/GaN high electron mobility transistors on a nanometer scale

Chung-Han Lin, D. R. Doutt, U. K. Mishra, T. A. Merz, and L. J. Brillson

Appl. Phys. Lett. 97, 223502 (2010); http://dx.doi.org/10.1063/1.3521392 (3 pages) | Cited 1 time

Online Publication Date: 29 November 2010

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Nanoscale Kelvin probe force microscopy and depth-resolved cathodoluminescence spectroscopy reveal an electronic defect evolution inside operating AlGaN/GaN high electron mobility transistors with degradation under electric-field-induced stress. Off-state electrical stress results in micron-scale areas within the extrinsic drain expanding and decreasing in electric potential, midgap defects increasing by orders-of-magnitude at the AlGaN layer, and local Fermi levels lowering as gate-drain voltages increase above a characteristic stress threshold. The pronounced onset of defect formation, Fermi level movement, and transistor degradation at the threshold gate-drain voltage of J. A. del Alamo and J. Joh [ Microelectron. Reliab. 49, 1200 (2009)] is consistent with crystal deformation and supports the inverse piezoelectric model of high electron mobility transistor degradation.
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85.30.Tv Field effect devices
72.80.Ey III-V and II-VI semiconductors
71.20.Nr Semiconductor compounds
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials

Strain response of La0.7Sr0.3CoO3 epitaxial thin films probed by SrTiO3 crystalline microcantilevers

M. Biasotti, L. Pellegrino, E. Bellingeri, N. Manca, A. S. Siri, and D. Marrè

Appl. Phys. Lett. 97, 223503 (2010); http://dx.doi.org/10.1063/1.3519478 (3 pages) | Cited 1 time

Online Publication Date: 30 November 2010

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We investigate the effect of tensile strain on the resistivity of La0.7Sr0.3CoO3 thin films grown on SrTiO3 microcantilevers. Strain is applied by bending the microcantilevers both mechanically through an atomic force microscope tip and electrostatically. A strain gauge factor of 12 is observed, similar to the value measured for manganite thin films. Such low value evidences the role of extrinsic effects in the cobaltites giant gauge factor observed by other authors.
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68.60.Bs Mechanical and acoustical properties
68.55.A- Nucleation and growth
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
73.61.Ng Insulators
81.15.Fg Pulsed laser ablation deposition

Nonpropagating X-shaped acoustic waves in sonic crystals without defects

Wei-Wei Kan, Bin Liang, Xue-Feng Zhu, Juan Tu, Xin-Ye Zou, and Jian-Chun Cheng

Appl. Phys. Lett. 97, 223504 (2010); http://dx.doi.org/10.1063/1.3522896 (3 pages) | Cited 1 time

Online Publication Date: 1 December 2010

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Three-dimensional localization of acoustic waves is investigated for a two-dimensional sonic crystal without defects. By studying the wave packet superposed by Bloch modes at the isofrequency surface, we predict the existence of nonpropagating X-shaped waves at either a local top point or a saddle point of a band, where diffractions in different directions cancel out. Different from traveling X waves in homogeneous media, acoustic energy can be localized stationarily within a small space region. Such a “soliton-like” feature has implication in diverse practical situations of focused ultrasound application where a focal region with high spatial stability is necessary.
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62.65.+k Acoustical properties of solids

Development and characterization of high temperature stable Ta–W–Si–C amorphous metal gates

Melody E. Grubbs, Xiao Zhang, Michael Deal, Yoshio Nishi, and Bruce M. Clemens

Appl. Phys. Lett. 97, 223505 (2010); http://dx.doi.org/10.1063/1.3508952 (3 pages) | Cited 1 time

Online Publication Date: 1 December 2010

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Threshold voltage variability (σVth) due to the polycrystalline nature of current metal gates has been identified as a problem in future generations of complementary metal oxide semiconductor (CMOS) devices. Amorphous metal Ta40W40Si10C10 gates are introduced in this work as a remedy. It was found that Ta–W–Si–C films remain amorphous at temperatures as high as 1120 °C, have n-type work functions, and are stable on HfO2. This alloy is a promising gate-first compatible material that has the potential to significantly reduce σVth.
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68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering
73.30.+y Surface double layers, Schottky barriers, and work functions
73.61.At Metal and metallic alloys

Charge detection in phosphorus-doped silicon double quantum dots

A. Rossi, T. Ferrus, G. J. Podd, and D. A. Williams

Appl. Phys. Lett. 97, 223506 (2010); http://dx.doi.org/10.1063/1.3524490 (3 pages) | Cited 3 times

Online Publication Date: 1 December 2010

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The ability to control and detect single electrons is paramount for the implementation of a scalable charge-based quantum computer and single-electron memory devices. Here, we report charge detection in degenerately phosphorus-doped silicon double quantum dots (DQD) that are electrically connected to an electron reservoir. The sensing device is a single-electron transistor patterned in close proximity to the DQD. We observe steplike behavior and shifts of the Coulomb blockade oscillations in the detector’s current as the reservoir’s potential is swept. By means of a classical capacitance model, we demonstrate that these features can be used to detect changes in the DQD charge occupancy.
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73.23.Hk Coulomb blockade; single-electron tunneling
85.35.Gv Single electron devices
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.30.-z Semiconductor devices

Carbon-doped single-crystalline SiGe/Si thermistor with high temperature coefficient of resistance and low noise level

H. H. Radamson, M. Kolahdouz, S. Shayestehaminzadeh, A. Afshar Farniya, and S. Wissmar

Appl. Phys. Lett. 97, 223507 (2010); http://dx.doi.org/10.1063/1.3524211 (2 pages) | Cited 1 time

Online Publication Date: 2 December 2010

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SiGe (C)/Si(C) multiquantum wells have been studied as a thermistor material for future bolometers. A thermistor material for uncooled Si-based thermal detectors with thermal coefficient of resistance of 4.5%/K for 100×100 μm2 pixel sizes and low noise constant (K1/f) value of 4.4×10−15 is presented. The outstanding performance of the devices is due to Ni-silicide contacts, smooth interfaces, and high quality multiquantum wells containing high Ge content.
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81.07.St Quantum wells
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)
81.05.Cy Elemental semiconductors
66.30.Ny Chemical interdiffusion; diffusion barriers
52.77.Dq Plasma-based ion implantation and deposition
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