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29 Nov 2010

Volume 97, Issue 22, Articles (22xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 97, 223101 (2010); http://dx.doi.org/10.1063/1.3519844 (3 pages)

Jin-Kyu Yang, Svetlana V. Boriskina, Heeso Noh, Michael J. Rooks, Glenn S. Solomon, Luca Dal Negro, and Hui Cao
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Thickness-dependent structural and magnetic properties of BiFeO3 films prepared by metal organic decomposition method

Fengzhen Huang, Xiaomei Lu, Weiwei Lin, Yi Kan, Junting Zhang, Qingdong Chen, Zhe Wang, Liben Li, and Jinsong Zhu

Appl. Phys. Lett. 97, 222901 (2010); http://dx.doi.org/10.1063/1.3519986 (3 pages) | Cited 1 time

Online Publication Date: 30 November 2010

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Perovskite BiFeO3 films with various thicknesses were prepared on Pt/Ti/SiO2/Si substrates by metal organic decomposition method. It was found that, with the film thickness increasing from 35 to 120 nm, the grain and ferroelectric domain size slightly increased, while the saturation magnetization Ms abruptly decreased. For the further increase of film thickness, Ms decreased slowly and the magnetization of unit area exhibited a fluctuation behavior. Moreover, the magnetic anisotropy degenerated with the increase of film thickness. The possible causes for the thickness effects were discussed.
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75.85.+t Magnetoelectric effects, multiferroics
77.55.Nv Multiferroic/magnetoelectric films
77.80.Dj Domain structure; hysteresis
75.70.Ak Magnetic properties of monolayers and thin films
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.30.Gw Magnetic anisotropy

Ultrathin GeOxNy interlayer formed by in situ NH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices

Qi Xie, Jan Musschoot, Marc Schaekers, Matty Caymax, Annelies Delabie, Xin-Ping Qu, Yu-Long Jiang, Sven Van den Berghe, Junhu Liu, and Christophe Detavernier

Appl. Phys. Lett. 97, 222902 (2010); http://dx.doi.org/10.1063/1.3524208 (3 pages) | Cited 6 times

Online Publication Date: 1 December 2010

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In situ NH3 plasma surface-nitridation treatments at 250 °C on both p- and n-type Ge(100) wafers were investigated. An ultrathin high quality GeOxNy interlayer was formed and exhibited dielectric breakdown for electric fields greater than 15 MV/cm. Well behaved capacitance-voltage characteristics were obtained for the complementary metal-oxide-semiconductor capacitors (CMOSCAPs) with HfO2(3 nm)/GeOxNy(1 nm) gate stacks. Gate leakage current density was below 5×10−7 A/cm2 at VFB±1 V for both MOSCAPs with an equivalent oxide thickness of 1.1 nm. Promising electrical properties of the CMOSCAPs indicate effective passivation of the Ge interface with GeOxNy interlayer formed by in situ NH3 plasma treatment.
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84.32.Tt Capacitors
81.65.Rv Passivation

Extrinsic screening of ferroelectric domains in Pb(Zr0.48Ti0.52)O3

I. Krug, N. Barrett, A. Petraru, A. Locatelli, T. O. Mentes, M. A. Niño, K. Rahmanizadeh, G. Bihlmayer, and C. M. Schneider

Appl. Phys. Lett. 97, 222903 (2010); http://dx.doi.org/10.1063/1.3523359 (3 pages) | Cited 2 times

Online Publication Date: 2 December 2010

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The variation in the surface potential as a function of the ferroelectric polarization of micron scale domains in a thin epitaxial film of Pb(Zr0.48Ti0.52)O3 is measured using mirror electron microscopy. Domains were written using piezoforce microscopy. The surface potential for each polarization was deduced from the mirror to low energy electron microscopy transition in the local reflectivity curve. The effect of extrinsic screening of the fixed polarization charge at the ferroelectric surface is demonstrated. The results are compared with density functional theory calculations.
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77.80.Dj Domain structure; hysteresis
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
77.22.Ej Polarization and depolarization
77.55.Px Epitaxial and superlattice films

Dielectric, magnetic, and magnetoelectric properties of La and Ti codoped BiFeO3

Y. F. Cui, Y. G. Zhao, L. B. Luo, J. J. Yang, H. Chang, M. H. Zhu, D. Xie, and T. L. Ren

Appl. Phys. Lett. 97, 222904 (2010); http://dx.doi.org/10.1063/1.3524225 (3 pages) | Cited 5 times

Online Publication Date: 3 December 2010

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The authors report on the dielectric, magnetic, and magnetoelectric (ME) properties of La and Ti codoped BiFeO3 (LBFTO). Codoping changes the structure of BiFeO3 from rhombohedral to tetragonal and the ferromagnetic properties of LBFTO are remarkably improved. More interestingly, the dielectric constant of LBFTO shows a linear increase with magnetic field and the slope decreases linearly with increasing temperature. The electric polarization of LBFTO also increases upon applying a magnetic field. The ME coupling coefficients of different orders were obtained by analyzing these data. The results were discussed by considering the doping induced destruction of the cycloidal structure in LBFTO.
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77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization
75.85.+t Magnetoelectric effects, multiferroics
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
75.50.Dd Nonmetallic ferromagnetic materials

Crystalline properties dependence of dielectric and energy storage properties of poly(vinylidene fluoride-chlorotrifluoroethylene)

Weimin Xia (夏卫民), Zhuo Xu (徐卓), Fei Wen (汶飞), Wenjing Li (李文静), and Zhicheng Zhang (张志成)

Appl. Phys. Lett. 97, 222905 (2010); http://dx.doi.org/10.1063/1.3518921 (3 pages)

Online Publication Date: 3 December 2010

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Thermal quenching at various temperatures has been employed to fabricate poly(vinylidene fluoride-co-chlorotrifluoroethylene) films with varied crystalline properties in an attempt to significantly improve their dielectric and energy storage properties. It has been shown that the film quenched at lower temperature possesses lower crystallinity and crystal grain size. The dielectric constant and dielectric loss of corresponding films are improved at low frequency and reduced at high frequency due to the response of dipoles in amorphous phase. The breakdown strength and polarization of the film quenched at lower temperature are larger than that quenched at higher temperature. Therefore, the low quenching temperature favors the high energy density both under the consistent electric field and the breakdown electric field.
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61.41.+e Polymers, elastomers, and plastics
81.40.Gh Other heat and thermomechanical treatments
77.22.-d Dielectric properties of solids and liquids
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