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29 Nov 2010

Volume 97, Issue 22, Articles (22xxxx)

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Appl. Phys. Lett. 97, 223101 (2010); http://dx.doi.org/10.1063/1.3519844 (3 pages)

Jin-Kyu Yang, Svetlana V. Boriskina, Heeso Noh, Michael J. Rooks, Glenn S. Solomon, Luca Dal Negro, and Hui Cao
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Demonstration of laser action in a pseudorandom medium

Jin-Kyu Yang, Svetlana V. Boriskina, Heeso Noh, Michael J. Rooks, Glenn S. Solomon, Luca Dal Negro, and Hui Cao

Appl. Phys. Lett. 97, 223101 (2010); http://dx.doi.org/10.1063/1.3519844 (3 pages) | Cited 2 times

Online Publication Date: 29 November 2010

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We demonstrated lasing in localized optical resonances of deterministic aperiodic structures with pseudorandom morphologies. The localized lasing modes in two-dimensional arrays of air nanoholes in GaAs membranes occur at reproducible spatial locations, and their frequencies are only slightly affected by the structural fluctuations in different samples. A numerical study on the resonances of the passive systems and optical imaging of lasing modes enabled us to interpret the observed lasing behavior in terms of distinctive localized resonances in the two-dimensional pseudorandom structures.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Electromechanical robustness of monolayer graphene with extreme bending

Benjamin D. Briggs, Bhaskar Nagabhirava, Gayathri Rao, Robert Geer, Haiyuan Gao, Yang Xu, and Bin Yu

Appl. Phys. Lett. 97, 223102 (2010); http://dx.doi.org/10.1063/1.3519982 (3 pages) | Cited 2 times

Online Publication Date: 30 November 2010

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We report on the electromechanical robustness of graphene in an extreme condition of deformation: uniaxial bending. A large-angle-bent graphene monolayer was obtained with a predefined template. Structural/mechanical analysis is conducted, followed by electronic transport measurement. Raman spectroscopy analysis suggests negligible strain in the significantly bent graphene, showing mechanical robustness of the two-dimensional carbon nanostructure. The impact on band structure with respect to key deformation parameters (bending angle and curvature radius) were investigated using sp3 tight-binding simulation. Results show insignificant local band modification at bending locations. Even with extreme deformation, excellent carrier mobility in monolayer graphene is preserved.
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81.40.Lm Deformation, plasticity, and creep
77.65.-j Piezoelectricity and electromechanical effects
62.20.F- Deformation and plasticity
72.80.Vp Electronic transport in graphene
72.20.Fr Low-field transport and mobility; piezoresistance
78.30.Am Elemental semiconductors and insulators

Compensation mechanism in silicon-doped gallium arsenide nanowires

B. Ketterer, E. Mikheev, E. Uccelli, and A. Fontcuberta i Morral

Appl. Phys. Lett. 97, 223103 (2010); http://dx.doi.org/10.1063/1.3517254 (3 pages) | Cited 1 time

Online Publication Date: 30 November 2010

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P-type gallium arsenide nanowires were grown with different silicon doping concentrations. The incorporation is monitored by Raman spectroscopy of the local vibrational modes. For Si-concentrations up to 1.4×1018 cm−3, silicon incorporates mainly in arsenic sites. For higher concentrations, we observe the formation of silicon pairs. This is related to the Coulomb interaction between charged defects during growth. An electrical deactivation of more than 85% of the silicon acceptors is deduced for nominal silicon concentration of 4×1019 cm−3. This work is important to understand the limiting mechanisms of doping in compound semiconductor nanowires.
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81.05.Ea III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
61.72.uj III-V and II-VI semiconductors

Probing the existence of energetically degenerate cluster isomers by chemical tagging

Qian Wang, Qiang Sun, and Puru Jena

Appl. Phys. Lett. 97, 223104 (2010); http://dx.doi.org/10.1063/1.3521282 (3 pages)

Online Publication Date: 30 November 2010

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Current methods for identifying the ground state geometry of a cluster require synergy between theory and experiment. However, this becomes a difficult problem when the accuracy of the theoretical methods is not sufficient to distinguish between nearly degenerate isomers. Using density functional theory based calculations, we show that the near degeneracy between the planar and the cage structures can be lifted by tagging these with halogens and superhalogens moieties such as Cl and BO2. The energy of the planar Au16− isomer is lowered from 0.15 eV before tagging to 0.51–0.55 eV after tagging, thus providing a way to probe its coexistence.
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36.40.Mr Spectroscopy and geometrical structure of clusters
31.15.E- Density-functional theory

Reconstructing solid state nanopore shape from electrical measurements

Yael Liebes, Maria Drozdov, Yotam Y. Avital, Yaron Kauffmann, Hanna Rapaport, Wayne D. Kaplan, and Nurit Ashkenasy

Appl. Phys. Lett. 97, 223105 (2010); http://dx.doi.org/10.1063/1.3521411 (3 pages)

Online Publication Date: 30 November 2010

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The dependence of nanopore biosensor conductance signal on the nanopore shape makes it important to decipher the latter with high precision. We show here that the three dimensional shape of a nanopore, extracted from electron microscopy analysis, allows for modeling the conductance of the nanopore over a wide range of ionic strengths. Furthermore, we demonstrate that the dependence of the nanopore conductance on ionic strength can be used to accurately extract the nanopore shape, eliminating the need for lengthy electron microscopy analysis. The suggested methodology can be used to monitor changes in the nanopore shape and evaluate them during electrical characterization.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
87.85.jc Electrical, thermal, and mechanical properties of biological matter
87.85.Rs Nanotechnologies-applications
81.05.Rm Porous materials; granular materials
73.63.-b Electronic transport in nanoscale materials and structures
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Titania nanostructure arrays from lithographically defined templates

Deying Xia, Ying-Bing Jiang, Xiang He, and S. R. J. Brueck

Appl. Phys. Lett. 97, 223106 (2010); http://dx.doi.org/10.1063/1.3521462 (3 pages)

Online Publication Date: 1 December 2010

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We report the fabrication of TiO2 nanostructures with lithographically defined templates. Interferomeric-lithography was used to define soft templates (polymer posts), and a sol-gel solution was deposited on a patterned surface. In the final step, calcination was employed to form uniform low aspect-ratio crystalline nonclose-packed TiO2 nanotube arrays over a large area. Similarly, nanotree arrays and parallel nanotunnels were prepared as well. The position and morphology of TiO2 nanostructures were well controlled. These TiO2 nanostructures have a potential technological importance in clean energy, biosensor, and drug release.
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81.16.Nd Micro- and nanolithography
61.46.Fg Nanotubes
81.07.De Nanotubes
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.40.Gh Other heat and thermomechanical treatments

Flexible piezoresistive strain sensor based on single Sb-doped ZnO nanobelts

Ya Yang, Wen Guo, Junjie Qi, and Yue Zhang

Appl. Phys. Lett. 97, 223107 (2010); http://dx.doi.org/10.1063/1.3522885 (3 pages) | Cited 1 time

Online Publication Date: 2 December 2010

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Using a two-end bonded Sb-doped ZnO nanobelt on a flexible polystyrene substrate, the decrease of the resistance with increasing compressed strains in the nanobelt has been observed, which is suggested to be attributed to the piezoresistance effect. The longitudinal piezoresistance coefficient of the Sb-doped ZnO nanobelt is about 350. On the basis of this finding, we made a flexible piezoresistive strain sensor in a signature pen, which can be used to detect the corresponding compressed strains when the characters are recorded.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
07.10.Cm Micromechanical devices and systems
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.10.Pz Instruments for strain, force, and torque
84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)
85.30.-z Semiconductor devices

Strain relaxation and phonon confinement in self-assembled InAsSb/InP (001) quantum dashes: Effect of deposition thickness and composition

W. Lei, H. H. Tan, C. Jagadish, Q. J. Ren, J. Lu, and Z. H. Chen

Appl. Phys. Lett. 97, 223108 (2010); http://dx.doi.org/10.1063/1.3522889 (3 pages) | Cited 3 times

Online Publication Date: 2 December 2010

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This paper presents a study on the strain relaxation and phonon confinement effect in InAsSb/InP quantum dashes (QDashes). The phonon mode with a frequency between that of InAs-like longitudinal optical mode and that of InP transverse optical mode is determined to be originated from InAsSb QDashes. Despite the small height of the QDashes, their phonon frequency is found to be mainly determined by the strain relaxation in the dashes. With increasing InAsSb deposition thickness and Sb composition in InAsSb dashes, the phonon mode shows an upward shift of its frequency due to the increased compressive strain.
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68.65.Hb Quantum dots (patterned in quantum wells)
81.07.Ta Quantum dots
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.23.Eg Nanodots
78.67.Hc Quantum dots
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials

Epitaxial growth of a silicene sheet

Boubekeur Lalmi, Hamid Oughaddou, Hanna Enriquez, Abdelkader Kara, Sébastien Vizzini, Bénidicte Ealet, and Bernard Aufray

Appl. Phys. Lett. 97, 223109 (2010); http://dx.doi.org/10.1063/1.3524215 (2 pages) | Cited 10 times

Online Publication Date: 2 December 2010

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Using atomic resolved scanning tunneling microscopy, we present here the experimental evidence of a silicene sheet (graphenelike structure) epitaxially grown on a close-packed silver surface [Ag(111)]. This has been achieved via direct condensation of a silicon atomic flux onto the single-crystal substrate in ultrahigh vacuum conditions. A highly ordered silicon structure, arranged within a honeycomb lattice, is synthesized and present two silicon sublattices occupying positions at different heights (0.02 nm) indicating possible sp2-sp3 hybridizations.
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68.55.ag Semiconductors
81.05.Cy Elemental semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Self-assembled In0.5Ga0.5As quantum dots on GaP

Yuncheng Song, Paul J. Simmonds, and Minjoo Larry Lee

Appl. Phys. Lett. 97, 223110 (2010); http://dx.doi.org/10.1063/1.3522647 (3 pages) | Cited 5 times

Online Publication Date: 2 December 2010

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We demonstrate the growth and luminescence of coherently strained In0.5Ga0.5As self-assembled quantum dots on GaP. Cross-sectional and planar-view transmission electron microscopy confirmed the dislocation-free nature of the In0.5Ga0.5As quantum dots and GaP cap layers. Intense photoluminescence from the quantum dots was measured at 80 K and was visible to the unaided eye in ambient lighting. The photoluminescence results show that emission energy can be controlled by varying the In0.5Ga0.5As deposition thickness. In combination with recent advances in the growth of GaP on Si, the In0.5Ga0.5As quantum dots demonstrated here could enable monolithic optoelectronic integration on Si.
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78.67.Hc Quantum dots
81.07.Ta Quantum dots
81.16.Dn Self-assembly
81.05.Ea III-V semiconductors
68.65.Hb Quantum dots (patterned in quantum wells)
78.55.Cr III-V semiconductors

Enhanced photocatalytic activity of TiO2 nanobarbed fibers treated with atmospheric pressure plasma using O2 gas

Hyun-Uk Lee, Kyun Ahn, Se-Young Jeong, Chae-Ryong Cho, Jong-Pil Kim, Jong-Seong Bae, Hyun-Gyu Kim, Se-Hun Kwon, and Hyung Woo Lee

Appl. Phys. Lett. 97, 223111 (2010); http://dx.doi.org/10.1063/1.3524210 (3 pages)

Online Publication Date: 3 December 2010

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TiO2 nanobarbed fibers (NBFs) were prepared by growing rutile TiO2 nanorods on anatase TiO2 nanofibers via electrospinning and hydrothermal reaction processes. There was a large increase in the photocatalytic activity of O2-plasma-treated (OP)-TiO2 NBFs relative to that of the TiO2 NBFs; this is due to the hydroxylation of the surface of the TiO2 NBFs by OP treatment. The repeatability of the photocatalytic activity of the OP-TiO2 NBFs was found to be high and the decolorization rate after ten cycles was 88.3% of the initial value. These results indicate that OP-TiO2 NBFs have great potential for use as a photocatalyst.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
82.50.-m Photochemistry
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.65.-b Surface treatments
52.77.-j Plasma applications

Chiral self-assemblies of amino-acid molecules: D- and L-methionine on Au(111) surface

A. Naitabdi and V. Humblot

Appl. Phys. Lett. 97, 223112 (2010); http://dx.doi.org/10.1063/1.3524229 (3 pages)

Online Publication Date: 3 December 2010

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Spontaneous self-assembly into chiral well-ordered two-dimensional molecular film at room temperature has been evidenced using the scanning tunneling microscopy for the growth of two enantiomerically pure L- and D-methionine on Au(111) surface. From the x-ray photoelectron spectroscopy measurements, the growth of methionine occurs through the formation of zwitterionic species. Our results demonstrate that this self-assembly mechanism is crucially driven by the interchain interactions via zwitterionic hydrogen bonding between neighboring negatively charged carboxylate groups and positively charged amino groups. Moreover, the molecular pair formation is incidental and results from the optimization of the interchain interactions, at least two chains are required for stability.
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36.20.Kd Electronic structure and spectra
79.60.Fr Polymers; organic compounds
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
36.20.Ey Conformation (statistics and dynamics)

Self-powered ultraviolet photodetector based on a single Sb-doped ZnO nanobelt

Ya Yang, Wen Guo, Junjie Qi, Jing Zhao, and Yue Zhang

Appl. Phys. Lett. 97, 223113 (2010); http://dx.doi.org/10.1063/1.3524231 (3 pages)

Online Publication Date: 3 December 2010

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Show Abstract
We report a self-powered ultraviolet photodetector based on a single Sb-doped ZnO nanobelt bridging an Ohmic contact and a Schottky contact. The photoresponse sensitivity and the response time of the fabricated device are as high as 2200% and less than 100 ms, respectively. The performance of the device dramatically degrades as the Sb-doping concentration decreases in the ZnO nanobelt. The possible mechanisms have been proposed and discussed.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Indium oxide octahedra optical microcavities

Hongxing Dong, Liaoxin Sun, Shulin Sun, Wei Xie, Lei Zhou, Xuechu Shen, and Zhanghai Chen

Appl. Phys. Lett. 97, 223114 (2010); http://dx.doi.org/10.1063/1.3521266 (3 pages) | Cited 1 time

Online Publication Date: 3 December 2010

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Nearly perfect In2O3 octahedra were fabricated and studied as optical resonators. Electron microscopy images revealed that the octahedra have single-crystal structures, very smooth surfaces, and regular geometric morphologies. Bow-tielike modes in the visible spectral range were clearly observed at room temperature by using the spatially resolved spectroscopic technique. The experimental observations are described and fitted well with the plane wave interference model and Cauchy dispersion formula for refractive indices.
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42.79.-e Optical elements, devices, and systems
78.40.Fy Semiconductors
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
81.16.-c Methods of micro- and nanofabrication and processing
42.86.+b Optical workshop techniques
61.46.Hk Nanocrystals
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