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6 Dec 2010

Volume 97, Issue 23, Articles (23xxxx)

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Appl. Phys. Lett. 97, 233101 (2010); http://dx.doi.org/10.1063/1.3523252 (3 pages)

Hoonkyung Lee, Marvin L. Cohen, and Steven G. Louie
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High temperature ultrasonic transducer up to 1000 °C using lithium niobate single crystal

Atsushi Baba (馬場淳史), Clifford T. Searfass, and Bernhard R. Tittmann

Appl. Phys. Lett. 97, 232901 (2010); http://dx.doi.org/10.1063/1.3524192 (3 pages) | Cited 1 time

Online Publication Date: 6 December 2010

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Structural health monitoring (SHM) techniques are needed to maintain the reliability of aging power plants. The high temperature transducers are necessary to realize SHM under the working condition of power plants. In this paper, a high temperature transducer was developed using lithium niobate (LiNbO3) single crystal, which is well known as a high Curie temperature piezoelectric material. The LiNbO3 was bonded onto a stainless steel substrate. The transducer was heated in an electric furnace while measuring the bottom echoes from the substrate. We confirmed that the high temperature transducer could work up to 1000 °C.
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77.55.hn Other piezoelectric or electrostrictive films

Observation of large electric polarization in orthorhombic TmMnO3 thin films

T. C. Han and H. H. Chao

Appl. Phys. Lett. 97, 232902 (2010); http://dx.doi.org/10.1063/1.3524500 (3 pages)

Online Publication Date: 6 December 2010

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High-quality orthorhombic (OT) TmMnO3 (TMO) thin films with a-axis perpendicular to the film surface are grown epitaxially on Nb-doped SrTiO3(110) substrates using pulsed laser deposition. The structural, magnetic, and electric properties of OT-TMO films are measured. We found that a strong coupling between the magnetic structure and the electric polarization. Our experimental results also show that ferroelectricity in OT-TMO thin films below 32 K. Furthermore, the large electric polarization up to 0.45 μC/cm2 is observed at 10 K, supporting a theoretical prediction of large polarization in the E-type spin structure in this system.
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75.70.Ak Magnetic properties of monolayers and thin films
81.15.Fg Pulsed laser ablation deposition
75.25.-j Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ej Polarization and depolarization
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

High permittivity Bi24Fe2O39 thin films prepared by a low temperature process

X. H. Zhu, E. Defaÿ, Y. Lee, B. André, M. Aïd, J. L. Zhu, D. Q. Xiao, and J. G. Zhu

Appl. Phys. Lett. 97, 232903 (2010); http://dx.doi.org/10.1063/1.3524492 (3 pages) | Cited 1 time

Online Publication Date: 7 December 2010

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High permittivity Bi24Fe2O39 (BFO) thin films have been deposited on platinized silicon substrates by a low temperature process combining rf magnetron sputtering at room temperature and postdeposition annealing at 450 °C. A nearly pure tetragonal crystal structure with highly (201)-preferred orientation, determined by x-ray diffraction, was formed in the BFO thin film. The BFO film not only exhibits high dielectric permittivity (εr = 113) and relatively low loss tangent (tan δ = 0.012), but also shows a fairly small quadratic voltage coefficient of capacitance (α ∼ 800 ppm/V2) and a small temperature coefficient of capacitance (αT ∼ 790 ppm/°C). Moreover, the leakage current density, obeying the Fowler–Nordheim tunneling mechanism, remains at a reasonably low level with the increase in applied electric field (J ∼ 10−6–10−4 A/cm2 under E = 400 kV/cm). These attractive dielectric and electrical properties make the low temperature processed Bi24Fe2O39 thin film a promising candidate for high-k dielectric applications in silicon-based integrated circuits.
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77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
77.55.-g Dielectric thin films
81.15.Cd Deposition by sputtering
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.66.Fn Inorganic compounds

Role of Ru nano-dots embedded in TiO2 thin films for improving the resistive switching behavior

Jung Ho Yoon, Kyung Min Kim, Min Hwan Lee, Seong Keun Kim, Gun Hwan Kim, Seul Ji Song, Jun Yeong Seok, and Cheol Seong Hwang

Appl. Phys. Lett. 97, 232904 (2010); http://dx.doi.org/10.1063/1.3525801 (3 pages) | Cited 6 times

Online Publication Date: 9 December 2010

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Ru nano-dots were embedded in a Pt/TiO2/Pt resistive switching cell to improve the uniformity of the switching parameters. The TiO2 film grown on the Ru nano-dots had a rutile structure locally whereas other parts of the TiO2 film had an anatase structure. The rutile-structured TiO2 formed conducting filaments easily and their rupture was much more uniform than the randomized ones in anatase TiO2. This largely improved the resistance uniformity at the reading voltage during the repeated resistance switching events. The improvement was also attributed to the high leakage current of the pristine sample at the reading voltage.
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73.61.Ng Insulators
68.55.aj Insulators

Magnetic switch of polarization in epitaxial orthorhombic YMnO3 thin films

I. Fina, L. Fàbrega, X. Martí, F. Sánchez, and J. Fontcuberta

Appl. Phys. Lett. 97, 232905 (2010); http://dx.doi.org/10.1063/1.3523352 (3 pages) | Cited 4 times

Online Publication Date: 10 December 2010

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We report on the growth and characterization of epitaxial thin films of orthorhombic YMnO3. It is found that a ferroelectric polarization exists along c-axis (Pc ∼ 90 nC/cm2) and a magnetic field induces the development of a ferroelectric polarization along a-axis (Pa) while suppressing Pc. This field-induced switching is consistent with the existence of a cycloidal magnetic order in YMnO3. This finding evidences that a noncollinear spin arrangement in thin films allows switchable electrical polarization and of tunability of their dielectric response by magnetic field.
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77.80.Fm Switching phenomena
77.55.Nv Multiferroic/magnetoelectric films
77.22.Ej Polarization and depolarization
77.22.Ch Permittivity (dielectric function)
75.85.+t Magnetoelectric effects, multiferroics
75.50.Ee Antiferromagnetics
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