APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

6 Dec 2010

Volume 97, Issue 23, Articles (23xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 97, 233101 (2010); http://dx.doi.org/10.1063/1.3523252 (3 pages)

Hoonkyung Lee, Marvin L. Cohen, and Steven G. Louie
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Valence-band splittings in cubic and hexagonal AlN, GaN, and InN

Luiz Cláudio de Carvalho, André Schleife, Frank Fuchs, and Friedhelm Bechstedt

Appl. Phys. Lett. 97, 232101 (2010); http://dx.doi.org/10.1063/1.3524234 (3 pages) | Cited 2 times

Online Publication Date: 6 December 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Modern parameter-free band-structure calculations are applied to the uppermost valence bands near the Γ point. They are based on a nonlocal exchange-correlation starting point for the iteration of the quasiparticle equation and include spin-orbit interaction. The Ga 3d and In 4d electrons remarkably influence the valence-band splittings. Quasiparticle effects shrink the crystal-field splitting Δcf for GaN and increase the inverted Γ1−Γ5 distance for AlN. Beyond the quasicubic approximation, we find a small anisotropy of the spin-orbit splittings. While for AlN Δso does only weakly depend on the crystal structure, variations are found between zinc blende and wurtzite for GaN or InN.
Show PACS
71.20.Nr Semiconductor compounds
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
71.70.Ch Crystal and ligand fields
61.66.Fn Inorganic compounds
Author Select

High switching endurance in TaOx memristive devices

J. Joshua Yang, M.-X. Zhang, John Paul Strachan, Feng Miao, Matthew D. Pickett, Ronald D. Kelley, G. Medeiros-Ribeiro, and R. Stanley Williams

Appl. Phys. Lett. 97, 232102 (2010); http://dx.doi.org/10.1063/1.3524521 (3 pages) | Cited 18 times

Online Publication Date: 6 December 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate over 1×1010 open-loop switching cycles from a simple memristive device stack of Pt/TaOx/Ta. We compare this system to a similar device stack based on titanium oxides to obtain insight into the solid-state thermodynamic and kinetic factors that influence endurance in metal-oxide memristors.
Show PACS
84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)

Stable bipolar surface potential behavior of copper-doped zinc oxide films studied by Kelvin probe force microscopy

Meng Fei Wong, Tun Seng Herng, Zhongkun Zhang, Kaiyang Zeng, and Jun Ding

Appl. Phys. Lett. 97, 232103 (2010); http://dx.doi.org/10.1063/1.3521281 (3 pages) | Cited 2 times

Online Publication Date: 7 December 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The surface potential of undoped and copper-doped zinc oxide (ZnO:Cu) films has been studied using the Kelvin probe force microscopy at ambient condition. In contrast to the undoped ZnO with unipolar behavior, the ZnO:Cu film exhibits a bipolar surface potential behavior under a dc bias. The localized hole trapping phenomenon is attributed to the presence of Cu ions in ZnO films. With an appropriate amount of the Cu ions ( ∼ 8 at. %), the charge trapping is reasonably stable over a period of 20 h, which can be associated with the presence of oxygen vacancies. This coexistence of Cu ions and oxygen vacancies in ZnO gives rise to stable bipolar behavior, paving way to potential charge storage application.
Show PACS
73.61.Ey III-V semiconductors
61.72.uj III-V and II-VI semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
61.72.jd Vacancies

Work function shifts, Schottky barrier height, and ionization potential determination of thin MgO films on Ag(001)

T. Jaouen, G. Jézéquel, G. Delhaye, B. Lépine, P. Turban, and P. Schieffer

Appl. Phys. Lett. 97, 232104 (2010); http://dx.doi.org/10.1063/1.3525159 (3 pages) | Cited 3 times

Online Publication Date: 8 December 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The electronic band structure and the work function of MgO thin films epitaxially grown on Ag(001) have been investigated using x-ray and ultraviolet photoelectron spectroscopy for various oxide thicknesses. The deposition of thin MgO films on Ag(001) induces a strong diminution in the metal work function. The p-type Schottky barrier height is constant at 3.85±0.10 eV above two MgO monolayers and the experimental value of the ionization potential is 7.15±0.15 eV. Our results are well consistent with the description of the Schottky barrier height in terms of the Schottky–Mott model corrected by an MgO-induced polarization effect.
Show PACS
73.30.+y Surface double layers, Schottky barriers, and work functions
68.55.aj Insulators
68.55.jd Thickness
78.40.Ha Other nonmetallic inorganics
79.60.Dp Adsorbed layers and thin films
71.20.Ps Other inorganic compounds

Surface polar phonon dominated electron transport in graphene

X. Li, E. A. Barry, J. M. Zavada, M. Buongiorno Nardelli, and K. W. Kim

Appl. Phys. Lett. 97, 232105 (2010); http://dx.doi.org/10.1063/1.3525606 (3 pages) | Cited 7 times

Online Publication Date: 9 December 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The effects of surface polar phonons on the electronic transport properties of monolayer graphene are studied by using a Monte Carlo simulation. Specifically, the low-field electron mobility and saturation velocity are examined for different substrates (SiC, SiO2, and HfO2) in comparison to the intrinsic case. While the results show that the low-field mobility can be substantially reduced by the introduction of surface polar phonon scattering, corresponding degradation of the saturation velocity is not observed for all three substrates at room temperature. It is also found that surface polar phonons can influence graphene’s electrical resistivity even at low temperature, leading potentially to inaccurate estimation of the acoustic phonon deformation potential constant.
Show PACS
72.20.Fr Low-field transport and mobility; piezoresistance
68.35.Ja Surface and interface dynamics and vibrations
73.61.Wp Fullerenes and related materials

High conductive gate leakage current channels induced by In segregation around screw- and mixed-type threading dislocations in lattice-matched InxAl1−xN/GaN heterostructures

J. Song, F. J. Xu, X. D. Yan, F. Lin, C. C. Huang, L. P. You, T. J. Yu, X. Q. Wang, B. Shen, K. Wei, and X. Y. Liu

Appl. Phys. Lett. 97, 232106 (2010); http://dx.doi.org/10.1063/1.3525713 (3 pages) | Cited 5 times

Online Publication Date: 9 December 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A correlation between microstructures and high gate leakage current density of Schottky contacts on lattice-matched InxAl1−xN/GaN heterostructures has been investigated by means of current-voltage measurements, conductive atom force microscopy (C-AFM), and transmission electron microscopy (TEM) investigations. It is shown that the reverse-bias gate leakage current density of Ni/Au Schottky contacts on InxAl1−xN/GaN heterostructures is more than two orders of magnitude larger than that on AlxGa1−xN/GaN ones. C-AFM and TEM observations indicate that screw- and mixed-type threading dislocations (S/M-TDs) are efficient leakage current channels in InxAl1−xN barrier and In segregation is formed around S/M-TDs. It is believed that In segregation around S/M-TDs reduces local Schottky barrier height to form conductive channels and leads to high leakage current density of Schottky contacts on InxAl1−xN/GaN heterostructures.
Show PACS
81.05.Ea III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.30.+y Surface double layers, Schottky barriers, and work functions
64.75.-g Phase equilibria
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy

K. Radhakrishnan, N. Dharmarasu, Z. Sun, S. Arulkumaran, and G. I. Ng

Appl. Phys. Lett. 97, 232107 (2010); http://dx.doi.org/10.1063/1.3518717 (3 pages)

Online Publication Date: 10 December 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
AlGaN/GaN high-electron-mobility transistor structures grown on 100 mm high-resistivity Si(111) substrates using plasma-assisted molecular beam epitaxy are reported. The two-dimensional electron gas (2DEG) formation in the heterostructures was realized by the growth optimization of two-step low temperature and high temperature AlN layers and GaN buffer layer. High-electron mobility of 1100 cm2/V s with a sheet carrier density of 9×1012 cm−2 was achieved. The presence of 2DEG in the AlGaN/GaN interface was confirmed by temperature dependent Hall measurements and capacitance-voltage carrier profiling. The fabricated 1.5 μm gate length high electron mobility transistor exhibited a maximum drain current density of 530 mA/mm and a peak extrinsic transconductance of 156 mS/mm.
Show PACS
85.30.Tv Field effect devices
85.40.Sz Deposition technology
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close