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6 Dec 2010

Volume 97, Issue 23, Articles (23xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 97, 233101 (2010); http://dx.doi.org/10.1063/1.3523252 (3 pages)

Hoonkyung Lee, Marvin L. Cohen, and Steven G. Louie
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Catastrophic optical damage at front and rear facets of diode lasers

Martin Hempel, Jens W. Tomm, Mathias Ziegler, Thomas Elsaesser, Nicolas Michel, and Michel Krakowski

Appl. Phys. Lett. 97, 231101 (2010); http://dx.doi.org/10.1063/1.3524235 (3 pages) | Cited 2 times

Online Publication Date: 6 December 2010

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Single-pulse tests of the catastrophic optical damage (COD) are performed for three batches of diode lasers with different gain-regions. The tests involve in situ inspection of front, rear, and side of the devices by a thermocamera. Devices with an Al-containing gain-region show COD at the front facet, as expected for strong facet heating via surface recombination and reabsorption of laser light. In contrast, Al-free devices with low surface recombination rates tend to fail at the rear facet, pointing to a different heating scenario. The high carrier density at the rear facet favors heating and COD via Auger recombination processes.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Five-band bias-selectable integrated quantum well detector in an n-p-n architecture

G. Ariyawansa, Y. Aytac, A. G. U. Perera, S. G. Matsik, M. Buchanan, Z. R. Wasilewski, and H. C. Liu

Appl. Phys. Lett. 97, 231102 (2010); http://dx.doi.org/10.1063/1.3524236 (3 pages) | Cited 1 time

Online Publication Date: 6 December 2010

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A detector with five bands covering visible to long-wave infrared is demonstrated using a GaAs-based n-p-n-architecture. The major elements are two back-to-back connected p-i-n photodiodes with InGaAs/GaAs and GaAs/AlGaAs-based quantum wells integrated within the n-regions. At 80 K, a preliminary detector shows two combinations of bands, each responding in three bands, covering the 0.6–0.8, 3–4, and 4–8 μm ranges and the 0.8–0.9, 0.9–1.0, and 9–13 μm ranges. A good selection of these two combinations based on the bias voltage polarity is observed. A similar four-band detector without any cross-talk between the bands is proposed using In0.53Ga0.47As/InP material system.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Mid-infrared surface-emitting photonic crystal microcavity light emitter on silicon

Binbin Weng, Jiangang Ma, Lai Wei, Jian Xu, Gang Bi, and Zhisheng Shi

Appl. Phys. Lett. 97, 231103 (2010); http://dx.doi.org/10.1063/1.3524239 (3 pages) | Cited 1 time

Online Publication Date: 6 December 2010

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We describe an IV-VI semiconductor light emitter consisting of a PbSe/PbSrSe multiple quantum well active region grown by molecular beam epitaxy on a patterned Si(111) substrate with a two dimensional (2D) photonic crystal (PC) array. The 2D PC array was designed to form photonic band gaps around 1960 and 2300 cm−1. Under pulsed optical pumping, light emission was observed with strongly coupled PC defect modes, which correspond well with simulated photonic band gaps. The observed spectral linewidth was around 10 cm−1 and the highest quantum efficiency measured was 12.8%.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.70.Qs Photonic bandgap materials

Saturation of absorption and gain in a quantum dot diode with continuous-wave driving

A. Tierno, T. Ackemann, C. G. Leburn, and C. T. A. Brown

Appl. Phys. Lett. 97, 231104 (2010); http://dx.doi.org/10.1063/1.3524824 (3 pages) | Cited 1 time

Online Publication Date: 6 December 2010

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We have observed saturation of absorption and gain in ensembles of InAs/GaAs self-assembled quantum dots at room temperature with continuous-wave driving in the 1.24–1.28 μm wavelength range. The saturation intensity was found to be Isat = (1.4–4.5)×109 W/m2 in absorption and Isat = (0.2–3.8)×109 W/m2 in gain, depending on the detuning.
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85.30.Kk Junction diodes

Experimental verification of the far-field subwavelength focusing with multiple concentric nanorings

Tingting Wang, Xiao Wang, Cuifang Kuang, Xiang Hao, and Xu Liu

Appl. Phys. Lett. 97, 231105 (2010); http://dx.doi.org/10.1063/1.3524825 (3 pages) | Cited 1 time

Online Publication Date: 6 December 2010

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A structure for subwavelength focusing at optical frequencies based on multiple concentric air nanorings was proposed. Using the coherent illumination light at 532 nm, a sequence of two-dimensional intensity distribution was obtained. We experimentally demonstrated the smallest focal spot observed at a distance of 2.8 μm away from the output surface of the sample with the full width at half maximum of ∼ 320 nm (0.6λ) and a depth of focus of ∼ 2.4 μm (4.51λ).
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42.79.-e Optical elements, devices, and systems

Bessel spatial profile of a soft x-ray laser beam

F. Tissandier, S. Sebban, M. Ribière, J. Gautier, Ph. Zeitoun, G. Lambert, J.-Ph. Goddet, F. Burgy, C. Valentin, A. Rousse, J. Nejdl, T. Mocek, and G. Maynard

Appl. Phys. Lett. 97, 231106 (2010); http://dx.doi.org/10.1063/1.3515841 (3 pages) | Cited 1 time

Online Publication Date: 7 December 2010

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We report far-field profile measurements of an optical-field-ionized high-order harmonic-seeded soft x-ray laser. We show that the beam transverse profile can be controlled between a regular Gaussian shape and a Bessel profile exhibiting several rings via the infrared laser pump intensity. These experimental data are supported by a complete numerical modeling including a two-dimensional plasma amplifier simulation and a two-level soft x-ray amplification using a Maxwell–Bloch treatment. This model takes into account the experimental high-order harmonic wavefront and intensity before it is numerically amplified.
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42.55.Vc X- and γ-ray lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

A unidirectional quantum cascade ring laser

C. C. Nshii, C. N. Ironside, M. Sorel, T. J. Slight, S. Y. Zhang, D. G. Revin, and J. W. Cockburn

Appl. Phys. Lett. 97, 231107 (2010); http://dx.doi.org/10.1063/1.3524200 (3 pages) | Cited 1 time

Online Publication Date: 7 December 2010

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We report on the design, fabrication, and characterization of a unidirectional quantum cascade ring laser operating at a wavelength of around 3.4 μm at 200 K. A unidirectional operation is achieved by incorporating an “S-shaped” crossover waveguide in a manner that it couples light from the counterclockwise direction to the preferred clockwise direction. The ring laser unidirectionality is confirmed by measuring the counterpropagating wave suppression ratio (CWSR) as a function of injection current. At 1.5 times the threshold current, the CWSR is 9 that is 90% of the light is emitted in the favored (clockwise) direction.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Gn Optical waveguides and couplers
42.15.Eq Optical system design

Terahertz electro-absorption effect enabling femtosecond all-optical switching in semiconductor quantum dots

M. C. Hoffmann, B. S. Monozon, D. Livshits, E. U. Rafailov, and D. Turchinovich

Appl. Phys. Lett. 97, 231108 (2010); http://dx.doi.org/10.1063/1.3515909 (3 pages) | Cited 1 time

Online Publication Date: 8 December 2010

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We demonstrate an instantaneous all-optical manipulation of optical absorption in InGaAs/GaAs quantum dots (QDs) via an electro-absorption effect induced by the electric field of an incident free-space terahertz signal. A terahertz signal with the full bandwidth of 3 THz was directly encoded onto an optical signal probing the absorption in QDs, resulting in the encoded temporal features as fast as 460 fs. The instantaneous nature of this effect enables femtosecond all-optical switching at very high repetition rates, suggesting applications in terahertz-range wireless communication systems with data rates of at least 0.5 Tbit/s.
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78.67.Hc Quantum dots
78.20.Jq Electro-optical effects
42.65.Pc Optical bistability, multistability, and switching, including local field effects
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Selective amplification of the lower-frequency branch via stimulated super-radiance in a waveguided free electron laser oscillator driven by short electron bunches

Vitali Zhaunerchyk, Rienk T. Jongma, Yuri Lurie, Yosef Pinhasi, and Wim J. van der Zande

Appl. Phys. Lett. 97, 231109 (2010); http://dx.doi.org/10.1063/1.3524220 (3 pages) | Cited 2 times

Online Publication Date: 8 December 2010

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In this letter, we propose a mechanism to extend the spectral range of a waveguided free electron laser (FEL) oscillator driven by a rf LINAC toward significantly longer wavelengths without changing the undulator or accelerator design parameters. This mechanism involves selective amplification of a lower-frequency branch supported in a FEL due to the waveguide dispersion. Based on simulations performed for the terahertz FEL under construction at the Radboud University Nijmegen, we conclude that these long wavelengths can be efficiently amplified via stimulated super-radiance as the electron bunches are shorter than the radiation wavelength.
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41.60.Cr Free-electron lasers
29.27.Eg Beam handling; beam transport

Resonant coupling in dielectric loaded plasmonic waveguides

A. Krishnan, C. J. Regan, L. Grave de Peralta, and A. A. Bernussi

Appl. Phys. Lett. 97, 231110 (2010); http://dx.doi.org/10.1063/1.3525160 (3 pages) | Cited 2 times

Online Publication Date: 8 December 2010

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Light propagation in dielectric loaded surface plasmon polariton waveguide (DLSPPW) resonant coupling devices operating at visible frequencies was experimentally investigated. The transmission characteristics of these devices were studied by leakage radiation microscopy. We show that a strong coupling between DLSPPWs can be achieved with nanoscale gaps. We demonstrate the operation of compact DLSPPW linear couplers and 3 dB power splitters. The performances of micro-DLSPPW racetrack resonators and signal drop filter are also discussed.
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42.79.Gn Optical waveguides and couplers
42.79.Ci Filters, zone plates, and polarizers
42.79.Fm Reflectors, beam splitters, and deflectors

Raman optical amplification properties of sodium–niobium–phosphate glasses

M. G. Donato, M. Gagliardi, L. Sirleto, G. Messina, A. A. Lipovskii, D. K. Tagantsev, and G. C. Righini

Appl. Phys. Lett. 97, 231111 (2010); http://dx.doi.org/10.1063/1.3525162 (3 pages) | Cited 1 time

Online Publication Date: 8 December 2010

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In this paper, the optical dispersion properties and the Raman gain of sodium phosphate glasses containing niobium oxide at increasing concentrations have been systematically investigated, with the aim of establishing a potential enhancement of the Raman gain and its bandwidth with respect to silica. A broadening of the bandwidth and a higher peak Raman gain (approximately 17 times) than in silica glass have been observed at high niobium oxide molar content. Our findings point out that sodium–niobium–phosphate glasses could be utilized for the realization of Raman amplifiers.
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78.35.+c Brillouin and Rayleigh scattering; other light scattering

All-optical switching of diffraction gratings infiltrated with dye-doped liquid crystals

D. E. Lucchetta, F. Vita, and F. Simoni

Appl. Phys. Lett. 97, 231112 (2010); http://dx.doi.org/10.1063/1.3525174 (3 pages)

Online Publication Date: 9 December 2010

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We report the realization and the characterization of an all-optical switching device based on a transmission grating recorded in a polymeric substrate infiltrated with a methyl red-doped liquid crystal. The properties of this highly nonlinear mixture are exploited to modulate the diffraction of the grating by a pump beam when a static electric field is applied. The behavior of the device is in agreement with the existing model for methyl red-doped liquid crystals.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.79.Dj Gratings
42.70.Df Liquid crystals

Resolving interparticle position and optical forces along the axial direction using optical coherence gating

T. H. Chow, W. M. Lee, K. M. Tan, B. K. Ng, and C. J. R. Sheppard

Appl. Phys. Lett. 97, 231113 (2010); http://dx.doi.org/10.1063/1.3519976 (3 pages)

Online Publication Date: 10 December 2010

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In this paper, we demonstrate the use of coherence gating to resolve particle positions and forces in the axial direction. Through coherence gating, particle displacements and interparticle separations can be resolved with a high signal-to-noise ratio. We achieved both high depth resolvability (10−6 m) and weak optical force (10−15 N) measurements in an optical trapping system using a low coherence interferometry system. Trap stiffness as low as 1.46 fN μm−1 was measured. This technique is well-suited for the direct visualization of interparticle optical-mechanical interactions.
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42.50.Wk Mechanical effects of light on material media, microstructures and particles
42.50.St Nonclassical interferometry, subwavelength lithography
07.60.Ly Interferometers

Double-nonlinear metamaterials

Rongcao Yang and Ilya V. Shadrivov

Appl. Phys. Lett. 97, 231114 (2010); http://dx.doi.org/10.1063/1.3525172 (3 pages) | Cited 2 times

Online Publication Date: 10 December 2010

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We study a double-nonlinear metamaterial composed of a mixture of both nonlinear electric and nonlinear magnetic resonators. We predict multistable behavior in such metamaterial with the possibility to control the effective index of refraction by the electromagnetic field intensity. In contrast to the structure with just one type of nonlinear inclusions, our composite material may switch properties between the transparent negative index and the transparent positive index regimes.
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81.05.Xj Metamaterials for chiral, bianisotropic and other complex media
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.70.Mp Nonlinear optical crystals
42.65.-k Nonlinear optics

Feedback-resistant p-type doped InAs/InP quantum-dash distributed feedback lasers for isolator-free 10 Gb/s transmission at 1.55 μm

Q. Zou, K. Merghem, S. Azouigui, A. Martinez, A. Accard, N. Chimot, F. Lelarge, and A. Ramdane

Appl. Phys. Lett. 97, 231115 (2010); http://dx.doi.org/10.1063/1.3525374 (3 pages)

Online Publication Date: 10 December 2010

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The tolerance to external optical feedback of p-type doped InAs/InP quantum-dash-based distributed feedback (DFB) lasers is investigated for different values of the Bragg-grating coupling coefficient. We show that p-doping of the active layer not only enhances the differential gain but also results in small values of the linewidth enhancement factor, both parameters contributing to an increased tolerance to external optical feedback. A −18 dB onset of coherence collapse is reported for antireflection-coated devices, demonstrating the compatibility of quantum-dash-based DFB lasers with isolator-free operation.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.79.Dj Gratings

Optical transitions and energy relaxation of hot carriers in Si nanocrystals

A. N. Poddubny, A. A. Prokofiev, and I. N. Yassievich

Appl. Phys. Lett. 97, 231116 (2010); http://dx.doi.org/10.1063/1.3525375 (3 pages) | Cited 1 time

Online Publication Date: 10 December 2010

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Dynamics of hot carriers confined in Si nanocrystals is studied theoretically using atomistic tight binding approach. Radiative, Auger-like, and phonon-assisted processes are considered. The Auger-like energy exchange between electrons and holes is found to be the fastest process in the system. However, the energy relaxation of hot electron-hole pair is governed by the single optical phonon emission. For a considerable number of states in small nanocrystals, single-phonon processes are ruled out by energy conservation law.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
73.63.Bd Nanocrystalline materials
63.22.Kn Clusters and nanocrystals
72.20.Ht High-field and nonlinear effects

Surface plasmon-coupled emission on metallic film coated with dye-doped polymer nanogratings

D. G. Zhang, X.-C. Yuan, and Jinghua Teng

Appl. Phys. Lett. 97, 231117 (2010); http://dx.doi.org/10.1063/1.3525576 (3 pages) | Cited 2 times

Online Publication Date: 10 December 2010

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In this letter, we report the experimental results on plasmonic waves excited on a silver film coated with dye-doped poly(methyl methacrylate) nanogratings, which are characterized by leakage radiation microscopy. Various patterns of the surface plasmon-coupled emission are demonstrated with the structured nanogratings. Plasmonic waves of anisotropic wave-numbers and Bragg mirror effect are both observed in this configuration. Mechanism of the experimental results is discussed from the viewpoint of coupling between adjacent stripe loaded surface plasmons. Our work has potential application in the development of plasmon lasers.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
42.79.Dj Gratings
78.66.Bz Metals and metallic alloys

A numerical study of Auger recombination in bulk InGaN

Francesco Bertazzi, Michele Goano, and Enrico Bellotti

Appl. Phys. Lett. 97, 231118 (2010); http://dx.doi.org/10.1063/1.3525605 (3 pages) | Cited 12 times

Online Publication Date: 10 December 2010

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Direct interband and intraband Auger recombination due to electron-electron-hole and hole-hole-electron transitions in bulk InGaN is investigated by first-order perturbation theory including Fermi statistics, realistic electronic structures obtained by nonlocal empirical pseudopotential calculations, and their corresponding wavevector-dependent dielectric functions. Our results confirm that the intraband Auger coefficient is negligible in alloy compositions relevant for solid-state lighting and indicate that the resonant enhancement associated with interband transitions for wavelengths ranging from blue to green cannot account for the efficiency droop experimentally observed in GaN-based light emitting diodes.
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81.05.Ea III-V semiconductors
79.20.Fv Electron impact: Auger emission
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
77.22.Ch Permittivity (dielectric function)
72.80.Ey III-V and II-VI semiconductors
71.20.Nr Semiconductor compounds

Room-temperature continuous wave operation of distributed feedback quantum cascade lasers with watt-level power output

Q. Y. Lu, Y. Bai, N. Bandyopadhyay, S. Slivken, and M. Razeghi

Appl. Phys. Lett. 97, 231119 (2010); http://dx.doi.org/10.1063/1.3525859 (3 pages) | Cited 5 times

Online Publication Date: 10 December 2010

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We demonstrate surface-grating distributed feedback quantum cascade lasers (QCLs) with a watt-level power output at 4.75 μm. A device with a 5 mm cavity length exhibits an output power of 1.1 W in room-temperature cw operation. Single-mode operation with a side mode suppression ratio of 30 dB is obtained in the working temperature of 15–105 °C. A double-lobed far field with negligible beam steering is observed. The significance of this demonstration lies in its simplicity and readiness to be applied to standard QCL wafers with the promise of high-power performances.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.79.Dj Gratings
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Liquid crystal light deflecting devices based on nonuniform anchoring

S. Valyukh, I. Valyukh, V. Chigrinov, H. S. Kwok, and H. Arwin

Appl. Phys. Lett. 97, 231120 (2010); http://dx.doi.org/10.1063/1.3526311 (3 pages) | Cited 2 times

Online Publication Date: 10 December 2010

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Tunable liquid crystal light deflecting devices based on nonuniform anchoring energy are proposed. These devices have uniform thicknesses of the layers they are composed of, and beam deviation is controlled with a uniform electrical field. Potential applicability of such an approach in beam deflectors and active lenses is investigated. It is shown that the approach is a competitive alternative to liquid crystal light deflecting devices, in which the needed spatial distribution of liquid crystal molecules is achieved either due to nonuniform thickness or due to generation of nonuniform electrical field.
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42.79.Kr Display devices, liquid-crystal devices
42.79.Bh Lenses, prisms and mirrors
42.79.Fm Reflectors, beam splitters, and deflectors

Nanowaveguides and couplers based on hybrid plasmonic modes

Jie Tian, Zhe Ma, Qiang Li, Yi Song, Zhihong Liu, Qing Yang, Chaolin Zha, Johan Åkerman, Limin Tong, and Min Qiu

Appl. Phys. Lett. 97, 231121 (2010); http://dx.doi.org/10.1063/1.3524515 (3 pages) | Cited 1 time

Online Publication Date: 10 December 2010

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Experimental demonstration of silicon nanowires based hybrid plasmonic waveguides and couplers with subwavelength mode confinement at the near infrared wavelength λ = 980 nm are presented. By measuring the radiating light from the discontinuities in a nanowire, the estimated propagation length of the hybrid plasmonic waveguide is about 30 μm (corresponding to a propagation loss of ∼ 0.14 dB/μm). For the coupler, the experimental results show that the hybrid plasmonic modes can be efficiently coupled between two overlapping nanowires only with a 1.9 μm long coupling length.
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42.82.Et Waveguides, couplers, and arrays

Homogenization of two-dimensional anisotropic dissipative photonic crystal

J. Carbonell, F. Cervera, J. Sánchez-Dehesa, J. Arriaga, L. Gumen, and A. Krokhin

Appl. Phys. Lett. 97, 231122 (2010); http://dx.doi.org/10.1063/1.3526381 (3 pages) | Cited 1 time

Online Publication Date: 10 December 2010

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We present the theoretical and experimental study of the effective permittivity of photonic crystal (PC) of parallel rods in the long-wavelength limit. Considering low-absorbing materials, we obtain analytical formulas for the imaginary part of the permittivity for the dielectric tensor. For the H-polarized mode propagating in a low-loss PC with rectangular symmetry we predict stronger azimuthal anisotropy for the imaginary part of permittivity than that for the real part. Measurements of microwave transmission through a PC of FR4 rods support the proposed theory. The obtained results may be used for optimization and tailoring of electromagnetic losses in artificial periodic structures.
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77.22.Ch Permittivity (dielectric function)
42.70.Qs Photonic bandgap materials

Intersubband polaritons in a one-dimensional surface plasmon photonic crystal

Simone Zanotto, Giorgio Biasiol, Riccardo Degl’Innocenti, Lucia Sorba, and Alessandro Tredicucci

Appl. Phys. Lett. 97, 231123 (2010); http://dx.doi.org/10.1063/1.3524823 (3 pages) | Cited 1 time

Online Publication Date: 10 December 2010

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In this work we demonstrate the achievement of light-matter strong coupling regime between an intersubband transition and the photonic bandlike mode supported by a metallic grating. Polaritonic resonances have been identified in the reflectivity spectra at 10° incidence, with a clear anticrossing appearing when the photonic mode is tuned across the transition line. Experimental results are in good agreement with the simulations performed with a scattering-matrix approach. This cavity design can be further optimized and is likely to open the way to a new class of time-resolved measurements, as it allows pump-and-probe measurements to be performed in collinear geometries.
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71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
42.70.Qs Photonic bandgap materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
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