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13 Dec 2010

Volume 97, Issue 24, Articles (24xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 97, 241101 (2010); http://dx.doi.org/10.1063/1.3525583 (3 pages)

Kanghee Lee and Jaewook Ahn
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Single-pixel coherent diffraction imaging

Kanghee Lee and Jaewook Ahn

Appl. Phys. Lett. 97, 241101 (2010); http://dx.doi.org/10.1063/1.3525583 (3 pages) | Cited 1 time

Online Publication Date: 13 December 2010

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We demonstrate single-pixel coherent diffraction imaging, whereby broadband terahertz waveforms passed through a slanted phase retarder (SPR), diffracted from an object, were measured by a terahertz detector located in the far field. For one dimensional imaging, the fixed-location single-pixel broadband detector simultaneously measured all the spatial frequency components of the object because the frequency components of the source maintain a one-to-one correspondence with the object’s spatial frequency. For two dimensional imaging, the angular position of the SPR enabled the diffracted terahertz wave to carry an angular projection image of the object.
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84.40.Az Waveguides, transmission lines, striplines
02.30.-f Function theory, analysis

Direct band Ge photoluminescence near 1.6 μm coupled to Ge-on-Si microdisk resonators

Gary Shambat, Szu-Lin Cheng, Jesse Lu, Yoshio Nishi, and Jelena Vuckovic

Appl. Phys. Lett. 97, 241102 (2010); http://dx.doi.org/10.1063/1.3526732 (3 pages) | Cited 3 times

Online Publication Date: 13 December 2010

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We fabricate and optically characterize germanium microdisks formed out of epitaxial germanium grown on silicon. Resonators coupled to fiber tapers display clear whispering gallery modes in transmission and photoluminescence with quality factors limited by germanium’s material absorption. Continuous wave pumping of the cavities resulted in a dominant heating effect for the cavity modes in both transmission and photoluminescence. Pulsed optical pumping proved to be more effective in minimizing heating, but was not sufficient to observe material gain or lasing. We believe that significantly higher doping levels are critical in order to achieve lasing at reasonable pump conditions.
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42.79.-e Optical elements, devices, and systems
78.55.Ap Elemental semiconductors
78.30.Am Elemental semiconductors and insulators

High harmonic generation spectroscopy of hydrocarbons

C. Vozzi, R. Torres, M. Negro, L. Brugnera, T. Siegel, C. Altucci, R. Velotta, F. Frassetto, L. Poletto, P. Villoresi, S. De Silvestri, S. Stagira, and J. P. Marangos

Appl. Phys. Lett. 97, 241103 (2010); http://dx.doi.org/10.1063/1.3526752 (3 pages) | Cited 1 time

Online Publication Date: 15 December 2010

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We have demonstrated the ability of few-cycle midinfrared intense laser pulses to produce extended harmonic spectra ( ≥ 45 eV) suitable for high harmonic spectroscopy in aligned hydrocarbons with ionization potentials in the range 9.07–11.52 eV. Modulations in the spectra measured with different alignment angles show signatures of the molecular structure. These results pave the way for the extension of high harmonic spectroscopy to complex biomolecules.
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33.15.Ry Ionization potentials, electron affinities, molecular core binding energy
33.15.Bh General molecular conformation and symmetry; stereochemistry
33.80.Eh Autoionization, photoionization, and photodetachment

Photon spin-to-orbital angular momentum conversion via an electrically tunable q-plate

Bruno Piccirillo, Vincenzo D’Ambrosio, Sergei Slussarenko, Lorenzo Marrucci, and Enrico Santamato

Appl. Phys. Lett. 97, 241104 (2010); http://dx.doi.org/10.1063/1.3527083 (3 pages)

Online Publication Date: 16 December 2010

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Exploiting electro-optic effects in liquid crystals, we achieved real-time control of the retardation of liquid-crystal-based q-plates through an externally applied voltage. Electro-optic q-plates can be operated as electrically driven converters of photon spin into orbital angular momentum, enabling a variation of the orbital angular momentum probabilities of the output photons over a time scale of milliseconds.
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61.30.-v Liquid crystals
78.20.Jq Electro-optical effects

Carrier lifetime in erbium-doped GaN waveguide emitting in 1540 nm wavelength

Q. Wang, R. Hui, R. Dahal, J. Y. Lin, and H. X. Jiang

Appl. Phys. Lett. 97, 241105 (2010); http://dx.doi.org/10.1063/1.3527089 (3 pages) | Cited 1 time

Online Publication Date: 16 December 2010

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We report the characteristics of an erbium-doped GaN semiconductor waveguide amplifier grown by metal-organic chemical vapor deposition. We demonstrated that both 980 and 1480 nm optical pumping were efficient to create population inversion between the 4I13/2 and 4I15/2 energy levels. The carrier lifetime in the 4I13/2 energy band was measured to be approximately 1.5 ms in room temperature, which is slightly shorter than that in erbium-doped silica due to the interaction between the erbium ions and the semiconductor lattice structure. But it is significantly longer than the carrier lifetime in a typical semiconductor optical amplifier which is in the nanosecond regime.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Silver halide planar waveguides and grating couplers for middle infrared integrated optics

B. Dekel and A. Katzir

Appl. Phys. Lett. 97, 241106 (2010); http://dx.doi.org/10.1063/1.3527920 (3 pages)

Online Publication Date: 16 December 2010

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We fabricated silver bromide (AgBr) planar waveguides with a thickness of ≈ 20 μm and designed reflective grating couplers for coupling the radiation of a tunable CO2 laser into these waveguides. We found that the attenuation was 6–9 dB/cm. The waveguides were used as attenuated total reflection elements for the sensing of hazardous pesticides in water in concentrations higher than 25 ppm. This work will pave the way for developing integrated optical elements and circuits which are based on silver halides and which operate in a broad spectral range in the mid-IR. These will be useful as chemical sensors and as spatial elements in nulling interferometry.
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42.82.Et Waveguides, couplers, and arrays
42.79.Dj Gratings
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

ZnO random laser diode arrays for stable single-mode operation at high power

H. K. Liang, S. F. Yu, and H. Y. Yang

Appl. Phys. Lett. 97, 241107 (2010); http://dx.doi.org/10.1063/1.3527922 (3 pages) | Cited 3 times

Online Publication Date: 16 December 2010

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An array of highly disordered i-ZnO:Al(3%) random cavities, which have 1 μm width, 150 nm thickness, and 2 mm length, is sandwiched between n-ZnO:Al(5%) and p-GaN/sapphire substrate to form an array of heterojunctions. The random cavities, which are electrically isolated and optically coupled with the adjacent random cavities, are laterally separated by a 1 μm wide Al2O3 dielectric insulator. Stable single-mode operation is observed from the laser diode array under high electrical pumping (i.e., >6×threshold current) at room temperature.
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42.55.Px Semiconductor lasers; laser diodes

Strong influence of packing density in terahertz metamaterials

Ranjan Singh, Carsten Rockstuhl, and Weili Zhang

Appl. Phys. Lett. 97, 241108 (2010); http://dx.doi.org/10.1063/1.3525169 (3 pages) | Cited 2 times

Online Publication Date: 16 December 2010

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We investigate the response of a terahertz metamaterial depending on the unit cell density. The fundamental inductive capacitive (LC) resonance has its highest quality (Q) factor for a critical period Pc = λ/n, with λ being the LC resonance wavelength and n being the refractive index of the substrate. This occurs due to simultaneous excitation of the lowest order lattice mode that strongly favors radiative coupling in the metamaterial plane. Increasing or decreasing the period from Pc reduces the Q factor. Our results suggest that an optimal package density exists in metamaterials to induce the strongest dispersion.
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81.05.Xj Metamaterials for chiral, bianisotropic and other complex media
78.70.Gq Microwave and radio-frequency interactions
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

High-resolution wide-field standing-wave surface plasmon resonance fluorescence microscopy with optical vortices

P. S. Tan, X.-C. Yuan, G. H. Yuan, and Q. Wang

Appl. Phys. Lett. 97, 241109 (2010); http://dx.doi.org/10.1063/1.3525173 (3 pages)

Online Publication Date: 16 December 2010

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A technique for high-resolution wide-field fluorescence microscopy by using standing surface plasmon waves induced by optical vortices (OVs) is proposed, aiming at harnessing its unique dynamic properties to sequentially illuminate specimen with different phase-shifted interference excitation field. Topological charges of the OV are employed to modulate phase-shifting of the interference pattern. Numerical studies and experimental results reveal an achievement of 0.25λ optical resolution, a factor of twofold improvement compared with the standard total-internal-reflection fluorescence microscopy.
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07.60.Pb Conventional optical microscopes
07.60.Ly Interferometers

Quantum dot-cavity strong-coupling regime measured through coherent reflection spectroscopy in a very high-Q micropillar

Vivien Loo, Loïc Lanco, Aristide Lemaître, Isabelle Sagnes, Olivier Krebs, Paul Voisin, and Pascale Senellart

Appl. Phys. Lett. 97, 241110 (2010); http://dx.doi.org/10.1063/1.3527930 (3 pages) | Cited 1 time

Online Publication Date: 17 December 2010

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We report on the coherent reflection spectroscopy of a high-quality factor micropillar, in the strong-coupling regime with a single InGaAs annealed quantum dot. The absolute reflectivity measurement is used to study the characteristics of the device at low and high excitation powers. The strong coupling is obtained with a g = 16 μeV coupling strength in a 7.3 μm diameter micropillar, with a cavity spectral width κ = 20.5 μeV (Q = 65 000). The factor of merit of the strong-coupling regime, 4g/κ = 3, is the current state-of-the-art for a quantum dot-micropillar system.
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81.05.Ea III-V semiconductors
81.07.Ta Quantum dots
81.40.Gh Other heat and thermomechanical treatments
78.67.Hc Quantum dots
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
61.72.Cc Kinetics of defect formation and annealing

Highly efficient yellow photoluminescence from {11–22} InGaN multiquantum-well grown on nanoscale pyramid structure

Taek Kim, Joosung Kim, Moon-Seung Yang, Sangmoon Lee, Youngsoo Park, U-In Chung, and Yonghoon Cho

Appl. Phys. Lett. 97, 241111 (2010); http://dx.doi.org/10.1063/1.3524524 (3 pages) | Cited 2 times

Online Publication Date: 17 December 2010

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InGaN/GaN multiquantum wells (MQWs) with a peak wavelength of 570 nm are grown on nanosize GaN hexagonal pyramid structures. Temperature dependent photoluminescence (PL) measurements from 10 to 300 K show a high integrated intensity ratio of 0.45. The emission energy of the MQW monotonically decreases with temperature increase, showing the absence of localized potential. Power dependent PL shows no noticeable blueshift caused by piezoelectric field screening effect. Comparative study of the PL results with those of the InGaN MQW on microsize pyramid show that nanosize pyramids play an important role in suppressing piezoelectric field in addition to the semipolar growth direction. We attribute the high luminescence efficiency of the MQW on nanosize pyramid structures to effectively suppressed piezoelectric field and potential localization.
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78.55.Cr III-V semiconductors
78.67.De Quantum wells
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Asymmetric-mode competition in a relativistic backward wave oscillator with a coaxial slow-wave structure

Xingjun Ge, Huihuang Zhong, Baoliang Qian, Jun Zhang, Lie Liu, Liang Gao, Chengwei Yuan, and Juntao He

Appl. Phys. Lett. 97, 241501 (2010); http://dx.doi.org/10.1063/1.3526726 (3 pages) | Cited 7 times

Online Publication Date: 15 December 2010

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The initial experimental results of an L-band relativistic backward wave oscillator with a coaxial slow-wave structure are presented. The asymmetric-mode-competition mechanism in the device is investigated theoretically and experimentally. It is shown that the diode voltage, guiding-magnetic field, and concentricity play a key role in the suppression and excitation of the asymmetric-mode (coaxial quasi-TE11 mode). In the experiments, the asymmetric-mode with a frequency of 2.05 GHz is suppressed and excited, which is in good agreement with the theoretical results.
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84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)
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Strongly enhanced photon collection from diamond defect centers under microfabricated integrated solid immersion lenses

J. P. Hadden, J. P. Harrison, A. C. Stanley-Clarke, L. Marseglia, Y.-L. D. Ho, B. R. Patton, J. L. O’Brien, and J. G. Rarity

Appl. Phys. Lett. 97, 241901 (2010); http://dx.doi.org/10.1063/1.3519847 (3 pages) | Cited 3 times

Online Publication Date: 13 December 2010

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The efficiency of photon collection from optically active defect centers in bulk diamond is greatly reduced by refraction at the diamond-air interface. We report on the fabrication and measurement of a geometrical solution to the problem; integrated solid immersion lenses (SILs) etched directly into the surface of diamond. An increase of a factor of 10 was observed in the saturated count-rate from a single negatively charged nitrogen-vacancy (NV−) within a 5 μm diameter SIL compared with NV−’s under a planar surface in the same crystal. Such a system is potentially scalable and easily adaptable to other defect centers in bulk diamond.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.05.ug Diamond
71.55.Ht Other nonmetals
71.35.-y Excitons and related phenomena
81.65.Cf Surface cleaning, etching, patterning
42.79.Bh Lenses, prisms and mirrors

Monolithic diamond optics for single photon detection

P. Siyushev, F. Kaiser, V. Jacques, I. Gerhardt, S. Bischof, H. Fedder, J. Dodson, M. Markham, D. Twitchen, F. Jelezko, and J. Wrachtrup

Appl. Phys. Lett. 97, 241902 (2010); http://dx.doi.org/10.1063/1.3519849 (3 pages) | Cited 2 times

Online Publication Date: 13 December 2010

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In this work, we experimentally demonstrate a novel and simple approach that uses off-the-shelf optical elements to enhance the collection efficiency from a single emitter. The key component is a solid immersion lens made of diamond, the host material for single color centers. We improve the excitation and detection of single emitters by one order of magnitude, as predicted by theory.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
42.79.Bh Lenses, prisms and mirrors

Highly conducting zinc oxide thin films achieved without postgrowth annealing

Budhi Singh, Zaheer Ahmed Khan, Imran Khan, and Subhasis Ghosh

Appl. Phys. Lett. 97, 241903 (2010); http://dx.doi.org/10.1063/1.3525575 (3 pages) | Cited 4 times

Online Publication Date: 13 December 2010

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Heavily doped zinc oxide thin films were grown by radio frequency magnetron sputtering. High level of Al doping has been achieved at high growth temperatures (TG), thereby avoiding the need for postgrowth annealing. It is further shown that due to ionized impurity scattering, mobility decreases with increasing TG. Optical transmission spectra show that the bandgap varies from 3.22 to 3.68 eV with increasing Al content due to the combined effect of Burstien–Moss effect and bandgap renormalization.
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81.05.Dz II-VI semiconductors
78.66.Hf II-VI semiconductors
78.40.Fy Semiconductors
78.30.Fs III-V and II-VI semiconductors
73.61.Ga II-VI semiconductors
72.10.Fk Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)

Large group delay in a microwave metamaterial analog of electromagnetically induced transparency

Lei Zhang, Philippe Tassin, Thomas Koschny, Cihan Kurter, Steven M. Anlage, and C. M. Soukoulis

Appl. Phys. Lett. 97, 241904 (2010); http://dx.doi.org/10.1063/1.3525925 (3 pages) | Cited 4 times

Online Publication Date: 13 December 2010

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We report on our experimental work concerning a planar metamaterial exhibiting classical electromagnetically induced transparency (EIT). Using a structure with two mirrored split-ring resonators as the dark element and a cut wire as the radiative element, we demonstrate that an EIT-like resonance can be achieved without breaking the symmetry of the structure. The mirror symmetry of the metamaterial’s structural element results in a selection rule inhibiting magnetic dipole radiation for the dark element, and the increased quality factor leads to low absorption (<10%) and large group index (of the order of 30).
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81.05.Xj Metamaterials for chiral, bianisotropic and other complex media
84.40.-x Radiowave and microwave (including millimeter wave) technology
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.70.-a Optical materials
42.50.Gy Effects of atomic coherence on propagation, absorption, and amplification of light; electromagnetically induced transparency and absorption

Atomic layer deposition of CuCl nanoparticles

G. Natarajan, P. S. Maydannik, D. C. Cameron, I. Akopyan, and B. V. Novikov

Appl. Phys. Lett. 97, 241905 (2010); http://dx.doi.org/10.1063/1.3525929 (3 pages)

Online Publication Date: 13 December 2010

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We report the growth of copper (I) chloride by atomic layer deposition. CuCl was deposited as nanoparticle arrays whose size and density were controlled by the process conditions. The nanoparticles were deposited using the self-limiting reaction of [bis(trimethylsilyl)acetylene]-(hexafluoroacetylacetonato)-copper(I) and hydrogen chloride. UV absorption measurements showed the characteristic Z1,2 and Z3 exciton absorption bands of CuCl. A strong UV emission was observed at 5 K from the free exciton Z3 and bound exciton I1 at 386.7 and 390.6 nm, respectively. A previously unreported visible emission band at 408 nm was also observed and attributed to the acceptor level of Cu vacancies.
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81.07.Bc Nanocrystalline materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.40.Ha Other nonmetallic inorganics
71.35.-y Excitons and related phenomena
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.jd Vacancies

Polarity effect on interfacial reactions at soldered junctions of electrically stressed thermoelectric modules

Chien-Neng Liao, Wen-Tai Chen, and Ching-Hua Lee

Appl. Phys. Lett. 97, 241906 (2010); http://dx.doi.org/10.1063/1.3525930 (3 pages)

Online Publication Date: 13 December 2010

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Polarity-dependent interfacial reaction at soldered junctions of bismuth telluride based thermoelectric modules is reported. Using infrared thermal imaging system asymmetrical heating at various soldered junctions of thermoelectric modules under electrical stressing was directly observed. It is suggested that electromigration (EM) coupled with asymmetrical heating leads to preferential consumption of Ni barrier and formation of Ni3Sn4, SnTe, and SbSn compounds at the cathode junction of p-type element. By measuring the EM-induced Sn atomic flux, the product of diffusivity and effective charge number, DZ∗, was determined to be 10−8–10−9 cm2/s at 200 °C.
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81.05.Hd Other semiconductors
82.45.Fk Electrodes
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Pa Thermoelectric and thermomagnetic effects
66.30.Qa Electromigration

Graphene growth by molecular beam epitaxy on the carbon-face of SiC

E. Moreau, S. Godey, F. J. Ferrer, D. Vignaud, X. Wallart, J. Avila, M. C. Asensio, F. Bournel, and J.-J. Gallet

Appl. Phys. Lett. 97, 241907 (2010); http://dx.doi.org/10.1063/1.3526720 (3 pages) | Cited 1 time

Online Publication Date: 13 December 2010

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Graphene layers have been grown by molecular beam epitaxy (MBE) on the (000math) C-face of SiC and have been characterized by atomic force microscopy, low energy electron diffraction (LEED), and UV photoelectron spectroscopy. Contrary to the graphitization process, the step-terrace structure of SiC is fully preserved during the MBE growth. LEED patterns show multiple orientation domains which are characteristic of graphene on SiC (000math), indicating non-Bernal rotated graphene planes. Well-defined Dirac cones, typical of single-layer graphene, have been observed in the valence band for few graphene layers by synchrotron spectroscopy, confirming the electronic decoupling of graphene layers.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
79.60.Bm Clean metal, semiconductor, and insulator surfaces
78.40.Ri Fullerenes and related materials
78.67.Wj Optical properties of graphene

Quantum growth of a metal/insulator system: Lead on sapphire

Hawoong Hong, Aaron Gray, Ruqing Xu, Longxiang Zhang, and T.-C. Chiang

Appl. Phys. Lett. 97, 241908 (2010); http://dx.doi.org/10.1063/1.3526727 (3 pages)

Online Publication Date: 13 December 2010

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We report the observation of quantum growth behavior in a metal-on-insulator system. Using insulating substrates, with their large band gaps, should maximize quantum confinement effects. In a study of Pb film growth and thermal processing on sapphire, we have observed robust preferred island height selection over a wide thickness range—a hallmark of quantum confinement effects—up to 250 °C. By contrast, room temperature is the limit for Pb films prepared on Si(111). These results provide the evidence connecting the quantum growth behavior of overlayers with the substrate band gap.
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68.55.at Other materials
68.60.Dv Thermal stability; thermal effects
81.40.Gh Other heat and thermomechanical treatments

dc-switchable and single-nanocrystal-addressable coherent population transfer

Deniz Gunceler and Ceyhun Bulutay

Appl. Phys. Lett. 97, 241909 (2010); http://dx.doi.org/10.1063/1.3526751 (3 pages)

Online Publication Date: 13 December 2010

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Achieving coherent population transfer in the solid-state is challenging compared to atomic systems due to closely spaced electronic states and fast decoherence. Here, within an atomistic pseudopotential theory, we offer recipes for the stimulated Raman adiabatic passage in embedded silicon and germanium nanocrystals. The transfer efficiency spectra display characteristic Fano resonances. By exploiting the Stark effect, we predict that transfer can be switched off with a dc voltage. As the population transfer is highly sensitive to structural variations, with a choice of a sufficiently small two-photon detuning bandwidth, it can be harnessed for addressing individual nanocrystals within an ensemble.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
79.60.Jv Interfaces; heterostructures; nanostructures
78.20.Jq Electro-optical effects
42.50.Hz Strong-field excitation of optical transitions in quantum systems; multiphoton processes; dynamic Stark shift
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

Metallic-glass-matrix composite structures with benchmark mechanical performance

Joseph P. Schramm, Douglas C. Hofmann, Marios D. Demetriou, and William L. Johnson

Appl. Phys. Lett. 97, 241910 (2010); http://dx.doi.org/10.1063/1.3521412 (3 pages)

Online Publication Date: 16 December 2010

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Metallic-glass-matrix composites demonstrating unusual combination of high strength, high toughness, and excellent processability are utilized to fabricate cellular structures of egg-box topology. Under compressive loading, the egg-box panels are capable of undergoing extensive plastic collapse at very high plateau stresses enabling absorption of large amounts of mechanical energy. In terms of specific mechanical energy absorbed, the present panels far outperform panels of similar topology made of aluminum or fiber-reinforced polymer composites, and even surpass steel structures of highly buckling-resistant topologies, thus emerging among the highest performance structures of any kind.
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81.40.Lm Deformation, plasticity, and creep
62.20.mq Buckling

Infrared phonon anomaly of one-dimensional metallic peanut-shaped C60 polymer

J. Onoe, A. Takashima, and Y. Toda

Appl. Phys. Lett. 97, 241911 (2010); http://dx.doi.org/10.1063/1.3527961 (3 pages)

Online Publication Date: 17 December 2010

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The infrared (IR) phonon properties of one-dimensional (1D) metallic peanut-shaped C60 polymers, which exhibit an energy gap below 60 K [ Y. Toda et al., Appl. Phys. Lett. 92, 094102 (2008)] that is similar to the Peierls transition of quasi-1D metallic materials, have been examined in the temperature range of 30–300 K by high-resolution in-situ IR spectroscopy. We observed an IR phonon anomaly in which two new IR modes appear at 50 K and become increasingly anomalous with decreasing temperature in a similar manner as phase phonons associated with charge density waves in quasi-1D condensates.
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81.05.ub Fullerenes and related materials
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
78.30.Na Fullerenes and related materials
73.63.-b Electronic transport in nanoscale materials and structures
72.15.Nj Collective modes (e.g., in one-dimensional conductors)
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials

Pseudoelastic stacking fault and deformation twinning in nanocrystalline Ni

B. Q. Li, M. L. Sui, and S. X. Mao

Appl. Phys. Lett. 97, 241912 (2010); http://dx.doi.org/10.1063/1.3527976 (3 pages) | Cited 2 times

Online Publication Date: 17 December 2010

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It is usually believed that the partial dislocation and deformation twin are the results of permanent plasticity in materials. Here, we present in situ atomic-scale observation of reversible stacking fault and deformation twin during loading and unloading in nanocrystalline Ni under high-resolution transmission electron microscopy. The high propensity for the reversibility of the stacking fault and deformation twin is due to the high stacking fault force and small grain size, and will provide an understanding at atomistic scale on the nature of the deformation in nanocrystalline materials.
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61.72.Nn Stacking faults and other planar or extended defects
61.46.-w Structure of nanoscale materials
81.40.Lm Deformation, plasticity, and creep
62.20.fq Plasticity and superplasticity
61.72.Mm Grain and twin boundaries

Photon antibunching and magnetospectroscopy of a single fluorine donor in ZnSe

K. De Greve, S. M. Clark, D. Sleiter, K. Sanaka, T. D. Ladd, M. Panfilova, A. Pawlis, K. Lischka, and Y. Yamamoto

Appl. Phys. Lett. 97, 241913 (2010); http://dx.doi.org/10.1063/1.3525579 (3 pages)

Online Publication Date: 17 December 2010

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We report on the optical investigation of single electron spins bound to fluorine donor impurities in ZnSe. Measurements of photon antibunching confirm the presence of single, isolated optical emitters, and magneto-optical studies are consistent with the presence of an exciton bound to the spin-impurity complex. The isolation of this single-donor-bound-exciton complex and its potential homogeneity offer promising prospects for a scalable semiconductor qubit with an optical interface.
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81.05.Dz II-VI semiconductors
78.20.Ls Magneto-optical effects
71.55.Gs II-VI semiconductors
71.35.-y Excitons and related phenomena
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