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13 Dec 2010

Volume 97, Issue 24, Articles (24xxxx)

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Appl. Phys. Lett. 97, 241101 (2010); http://dx.doi.org/10.1063/1.3525583 (3 pages)

Kanghee Lee and Jaewook Ahn
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Temperature dependence of 1/f noise mechanisms in silicon nanowire biochemical field effect transistors

Nitin K. Rajan, David A. Routenberg, Jin Chen, and Mark A. Reed

Appl. Phys. Lett. 97, 243501 (2010); http://dx.doi.org/10.1063/1.3526382 (3 pages) | Cited 2 times

Online Publication Date: 14 December 2010

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The 1/f noise of silicon nanowire biochemical field effect transistors is fully characterized from weak to strong inversion in the temperature range 100–300 K. At 300 K, our devices follow the correlated Δn-Δμ model. As the temperature is lowered, the correlated mobility fluctuations become insignificant and the low frequency noise is best modeled by the Δn-model. For some devices, evidence of random telegraph signals is observed at low temperatures, indicating that fewer traps are active and that the 1/f noise due to number fluctuations is further resolved to fewer fluctuators, resulting in a Lorentzian spectrum.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

Magnetic noise evolution in CoFeB/MgO/CoFeB tunnel junctions during annealing

Ryan Stearrett, W. G. Wang, L. R. Shah, J. Q. Xiao, and E. R. Nowak

Appl. Phys. Lett. 97, 243502 (2010); http://dx.doi.org/10.1063/1.3526721 (3 pages) | Cited 5 times

Online Publication Date: 14 December 2010

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We report on the evolution of equilibrium magnetoresistive (MR) 1/f noise due to the exchange-biased magnetic layer in MgO-based magnetic tunnel junctions as a function of annealing time at 380 and 430 °C. The resistance susceptibility and MR noise are observed to increase rapidly with annealing time at a fixed temperature. The magnetic losses responsible for MR noise are not significantly affected by the structural crystallization at the CoFeB/MgO interface during short annealing times. After prolonged annealing, the decrease in magnetic losses is attributed to reduced disorder in the magnetic layers that result in thermally driven fluctuations in local micromagnetic structure.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.25.Dk Orbital, charge, and other orders, including coupling of these orders
75.75.Cd Fabrication of magnetic nanostructures
72.25.Mk Spin transport through interfaces
75.60.Nt Magnetic annealing and temperature-hysteresis effects
73.40.Rw Metal-insulator-metal structures

Low-frequency noise behavior of tunneling field effect transistors

J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu

Appl. Phys. Lett. 97, 243503 (2010); http://dx.doi.org/10.1063/1.3526722 (3 pages) | Cited 1 time

Online Publication Date: 14 December 2010

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We report on the low-frequency noise (LFN) properties of tunneling field effect transistors (TFETs) fabricated on silicon-on-insulator substrate. Unlike conventional large FETs, where LFN obeys a 1/f frequency dependence, in large TFETs the LFN is dominated by random telegraph signal (RTS) noise characterized by 1/f2 slope. We explain this unique LFN behavior by the local junction control of the tunneling drain current, which involves few traps in a small area. The origin of RTS noise is corroborated by the gate length independence of the ID-VGS characteristics of TFETs. The relatively high amplitude of RTS noise in TFETs will have circuit design implications.
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85.30.Tv Field effect devices

High performance ZnO nanorod strain driving transistor based complementary metal-oxide-semiconductor logic gates

Nishuang Liu, Guojia Fang, Wei Zeng, Hai Zhou, Hao Long, Xiao Zou, Yuping Liu, and Xingzhong Zhao

Appl. Phys. Lett. 97, 243504 (2010); http://dx.doi.org/10.1063/1.3526719 (3 pages)

Online Publication Date: 14 December 2010

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ZnO nanorod strain driving transistor (SDT) with 107 scale “on”-“off” ratio has been fabricated on Kapton substrate by a single-step hydrothermal reaction. The transistor is driven by strain due to the change in Schottky barrier height caused by piezoelectric effect as well as the change of contact area between ZnO bridging nanorods. Moreover, via utilizing two SDTs on the top and bottom surfaces of the substrate as two complementary metal-oxide-semiconductor transistors, several logic operations such as inverter, NAND, NOR, XOR, MUX, and DEMUX with good rectifying behaviors have been demonstrated.
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85.30.Tv Field effect devices

Track heating study for current-induced domain wall motion experiments

J. Curiale, A. Lemaître, G. Faini, and V. Jeudy

Appl. Phys. Lett. 97, 243505 (2010); http://dx.doi.org/10.1063/1.3526755 (3 pages) | Cited 1 time

Online Publication Date: 15 December 2010

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We investigate the Joule heating produced by current pulses in (Ga,Mn)(As,P) ferromagnetic semiconducting nanotracks. The transient and the stationary heating regimes are determined experimentally. A good quantitative agreement is obtained with simulations and analytical calculations. The temperature of the tracks is shown to be essentially determined by the heat diffusion through the substrate. Implications for current-induced domain wall motion experiments are discussed.
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75.60.Ch Domain walls and domain structure
75.50.Pp Magnetic semiconductors
75.78.Fg Dynamics of domain structures
72.25.Dc Spin polarized transport in semiconductors
75.50.Dd Nonmetallic ferromagnetic materials

Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films

M. Lorenz, A. Lajn, H. Frenzel, H. v. Wenckstern, M. Grundmann, P. Barquinha, R. Martins, and E. Fortunato

Appl. Phys. Lett. 97, 243506 (2010); http://dx.doi.org/10.1063/1.3525932 (3 pages) | Cited 1 time

Online Publication Date: 15 December 2010

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We have investigated the electrical properties of metal-semiconductor field-effect transistors (MESFET) based on amorphous oxide semiconductor channels. All functional parts of the devices were sputter-deposited at room temperature. The influence on the electrical properties of a 150 °C annealing step of the gallium-indium-zinc-oxide channel is investigated. The MESFET technology offers a simple route for processing of the transistors with excellent electrical properties such as low subthreshold swing of 112 mV/decade, gate sweep voltages of 2.5 V, and channel mobilities up to 15 cm2/V s.
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85.30.Tv Field effect devices

Stability of top- and bottom-gate amorphous polymer field-effect transistors

S. Georgakopoulos, D. Sparrowe, F. Meyer, and M. Shkunov

Appl. Phys. Lett. 97, 243507 (2010); http://dx.doi.org/10.1063/1.3525933 (3 pages) | Cited 1 time

Online Publication Date: 15 December 2010

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Performance and stability between the top- and bottom-gate field-effect transistor configurations are investigated in dual-gate transistor structures consisting of the same insulator and gate materials. The transistors behave similarly for both gate modes with on/off ratio in excess of 105, subthreshold swing of 0.5–1 V/decade, and mobility of 0.03–0.04 cm2/V s, retained over several months, with fabrication, storage, and characterization, performed in ambient conditions.
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85.30.Tv Field effect devices

Superlatticelike dielectric as a thermal insulator for phase-change random access memory

Desmond Loke, Luping Shi, Weijie Wang, Rong Zhao, Lung-Tat Ng, Kian-Guan Lim, Hongxin Yang, Tow-Chong Chong, and Yee-Chia Yeo

Appl. Phys. Lett. 97, 243508 (2010); http://dx.doi.org/10.1063/1.3527919 (3 pages) | Cited 4 times

Online Publication Date: 16 December 2010

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Superlatticelike (SLL) dielectric comprising of Ge2Sb2Te5 and SiO2 was employed to reduce the power and increase the speed of phase-change random access memories (PCRAMs). In this study, we found that PCRAM cells with SLL dielectric require lower currents and shorter pulse-widths to switch compared to the cells with SiO2 dielectric. As the thickness of the SLL period reduces, the power and speed of the cells improved further due to the better thermal confinement of the SLL dielectric. Fast phase-change in 5 ns was observed in large cells of 1 μm, showing the effectiveness of SLL dielectric for advanced memory applications.
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84.30.Sk Pulse and digital circuits

Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

L. Goux, P. Czarnecki, Y. Y. Chen, L. Pantisano, X. P. Wang, R. Degraeve, B. Govoreanu, M. Jurczak, D. J. Wouters, and L. Altimime

Appl. Phys. Lett. 97, 243509 (2010); http://dx.doi.org/10.1063/1.3527086 (3 pages) | Cited 11 times

Online Publication Date: 16 December 2010

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In this letter, we study the influence of the Pt top-electrode thickness and of the chamber atmosphere during cell operation on the resistive switching of TiN\HfO2\Pt cells. The oxygen permeability of the Pt electrode directly in contact with the atmosphere significantly affects the resistive switching and the resistance states of the cell. The results provide strong experimental indications that the electroforming operation leads to oxygen-vacancy formation and that the subsequent reset operation relies on the available oxygen species in the filament neighborhood. Significant implications with respect to endurance and retention assessment of resistive-switching memory devices are discussed.
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84.30.Sk Pulse and digital circuits
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Anisotropic transport properties in InAs/AlSb heterostructures

G. Moschetti, H. Zhao, P.-Å. Nilsson, S. Wang, A. Kalabukhov, G. Dambrine, S. Bollaert, L. Desplanque, X. Wallart, and J. Grahn

Appl. Phys. Lett. 97, 243510 (2010); http://dx.doi.org/10.1063/1.3527971 (3 pages) | Cited 3 times

Online Publication Date: 17 December 2010

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We have investigated the anisotropic transport behavior of InAs/AlSb heterostructures grown on a (001) InP substrate. An electrical analysis showed anisotropic sheet resistance Rsh and electron mobility μn in the two dimensional electron gas (2DEG). Hall measurements demonstrated an enhanced anisotropy in μn when cooled from room temperature to 2 K. High electron mobility transistors exhibited 27% higher maximum drain current IDS and 23% higher peak transconductance gm when oriented along the [1-10] direction. The anisotropic transport behavior in the 2DEG was correlated with an asymmetric dislocation pattern observed in the surface morphology and by cross-sectional microscopy analysis of the InAs/AlSb heterostructure.
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81.05.Ea III-V semiconductors
85.30.Tv Field effect devices
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.My Galvanomagnetic and other magnetotransport effects
68.35.bg Semiconductors
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
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