APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

20 Dec 2010

Volume 97, Issue 25, Articles (25xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 97, 252101 (2010); http://dx.doi.org/10.1063/1.3525588 (3 pages)

Wei Pan, Stephen W. Howell, Anthony Joseph Ross, III, Taisuke Ohta, and Thomas A. Friedmann
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Giant magnetic domain-wall resistance in phase-separated manganite films

L. Granja, L. E. Hueso, J. L. Prieto, P. Levy, and N. D. Mathur

Appl. Phys. Lett. 97, 253501 (2010); http://dx.doi.org/10.1063/1.3527942 (3 pages)

Online Publication Date: 20 December 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The top and bottom electrodes of the ferromagnetic manganite La0.7Ca0.3MnO3 may be magnetically decoupled by a La0.59Ca0.41MnO3 interlayer in which ferromagnetic and paramagnetic phases coexist. In mesas fabricated from these trilayer films, in-plane magnetic domain walls associated with the antiparallel magnetic electrode configuration show a giant resistance-area product >10−10 Ω m2. This is almost two orders of magnitude larger than our devices with interlayer composition La0.6Ca0.4MnO3 [ C. Israel et al., Phys. Rev. B 78, 054409 (2008)] where phase separation is less extreme. High-field treatments modify the ferromagnetic phase fraction of the interlayer.
Show PACS
75.60.Ch Domain walls and domain structure
75.78.Fg Dynamics of domain structures
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.40.Cx Static properties (order parameter, static susceptibility, heat capacities, critical exponents, etc.)
75.70.Kw Domain structure (including magnetic bubbles and vortices)
75.47.De Giant magnetoresistance

Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors

Yuji Urabe, Masafumi Yokoyama, Hideki Takagi, Tetsuji Yasuda, Noriyuki Miyata, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Mitsuru Takenaka, and Shinichi Takagi

Appl. Phys. Lett. 97, 253502 (2010); http://dx.doi.org/10.1063/1.3528334 (3 pages)

Online Publication Date: 21 December 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on In0.53Ga0.47As(100)-on-insulator metal-insulator-semiconductor field-effect transistors (InGaAs-OI MISFETs) on Si wafers with standard front-gate configuration. The channel mobility of the InGaAs-OI MISFETs was higher than those for InGaAs MISFETs on bulk InP wafers. The on/off ratio was controlled over a wide range by applying a back-gate bias, which indicates the possibility of double-gate operation for higher drivability and lower power consumption.
Show PACS
85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Fr Low-field transport and mobility; piezoresistance

Performance enhancement of multilevel cell nonvolatile memory by using a bandgap engineered high-κ trapping layer

Chenxin Zhu, Zongliang Huo, Zhongguang Xu, Manhong Zhang, Qin Wang, Jing Liu, Shibing Long, and Ming Liu

Appl. Phys. Lett. 97, 253503 (2010); http://dx.doi.org/10.1063/1.3531559 (3 pages) | Cited 5 times

Online Publication Date: 23 December 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A high-κ based charge trap flash (CTF) memory structure using bandgap engineered trapping layer HfO2/Al2O3/HfO2 (HAH) has been demonstrated for multilevel cell applications. Compared to a single HfO2 trapping layer, a CTF memory device based on the HAH trapping layer exhibits a larger memory window of 9.2 V, faster program/erase speed, and significantly improved data retention. Enhancements of memory performance and reliability are attributed to the modulation of charge distribution by bandgap engineering in trapping layer. The findings provide a guide for future design of CTF.
Show PACS
84.30.Sk Pulse and digital circuits

Surface photoemission in a high-brightness electron beam radio frequency gun

H. J. Qian, J. B. Murphy, Y. Shen, C. X. Tang, and X. J. Wang

Appl. Phys. Lett. 97, 253504 (2010); http://dx.doi.org/10.1063/1.3531561 (3 pages)

Online Publication Date: 23 December 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report the experimental characterization of high-brightness electron beam generation from a magnesium (Mg) photocathode. Both the quantum efficiency (QE) and the thermal emittance of an Mg cathode are experimentally investigated. The measured QE ∼ 0.2% is the highest reported for a metal cathode. We observed no change in the Mg cathode thermal emittance as the QE varies from 0.015% to 0.15%. The upper-limit of the thermal emittance, 0.5 mm mrad, is about 50% lower than the theoretical prediction. Our results demonstrated the feasibility of having a high QE and a low thermal emittance simultaneously for a robust metal photocathode.
Show PACS
85.60.Ha Photomultipliers; phototubes and photocathodes
84.47.+w Vacuum tubes

An electrical switching device controlled by a magnetic field-dependent impact ionization process

Jinseo Lee, Sungjung Joo, Taeyueb Kim, Ki Hyun Kim, Kungwon Rhie, Jinki Hong, and Kyung-Ho Shin

Appl. Phys. Lett. 97, 253505 (2010); http://dx.doi.org/10.1063/1.3532105 (3 pages)

Online Publication Date: 23 December 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
An abrupt change of conductance at a threshold magnetic field was observed in a device consisting of a nonmagnetic narrow-gap semiconductor. The conductance varies more than 25 times as the magnetic field increases. The threshold magnetic field can be tuned using a bias voltage from zero to several hundred Gauss. This large magnetoconductance effect is caused by the magnetic field-dependent impact ionization process. A theoretical model is proposed, and calculations based on this model simulate the experimental results closely. This device may be a good candidate for an electrical switching device controlled by a magnetic field.
Show PACS
85.70.Ec Magnetostrictive, magnetoacoustic, and magnetostatic devices
85.30.-z Semiconductor devices
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close