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Appl. Phys. Lett. 97, 262501 (2010); http://dx.doi.org/10.1063/1.3531666 (3 pages)

Magnetoresistance in a lithography defined single constrained domain wall spin-valve

Yudong Wang1, C. H. de Groot1, D. Claudio-Gonzalez2, and Hans Fangohr3

1School of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, United Kingdom
2Department of Multidisciplinary Studies, Division of Engineering Campus Irapuato-Salamanca, University of Guanajuato, C.P. 38940, Yuriria, Mexico
3School of Engineering Science, University of Southampton, Southampton SO17 1BJ, United Kingdom

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(Received 5 November 2010; accepted 2 December 2010; published online 28 December 2010)

We have measured domain wall magnetoresistance in a single lithographically constrained domain wall. An H-shaped Ni nanobridge was fabricated by e-beam lithography with the two sides being single magnetic domains showing independent magnetic switching. The connection between the sides constrains the domain wall when the sides line up antiparallel. The magnetoresistance curve clearly identifies the magnetic configurations that are expected from a spin-valvelike structure. The value of the magnetoresistance at room temperature is around 0.1% or 0.4 Ω. This value is shown to be in agreement with a theoretical formulation based on spin accumulation. Micromagnetic simulations show that it is possible to reduce the size of the domain wall further by shortening the length of the bridge.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 72.15.Gd

    Galvanomagnetic and other magnetotransport effects

  • 81.16.Nd

    Micro- and nanolithography

  • 68.65.-k

    Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

  • 61.46.-w

    Structure of nanoscale materials

  • 75.60.Ch

    Domain walls and domain structure

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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