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Applied Physics Letters / Volume 97 / Issue 26 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 97, 263107 (2010); http://dx.doi.org/10.1063/1.3532848 (3 pages)

Thermal conductivity of GaAs nanowires studied by micro-Raman spectroscopy combined with laser heating

Martin Soini1, Ilaria Zardo1, Emanuele Uccelli1,2, Stefan Funk1, Gregor Koblmüller1, Anna Fontcuberta i Morral1,2, and Gerhard Abstreiter1

1Physik Department and Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, D-85748 Garching, Germany
2Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

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(Received 13 September 2010; accepted 2 December 2010; published online 29 December 2010)

The thermal properties of freely suspended GaAs nanowires are investigated by applying a method which relies on laser heating and the determination of the local temperature by Raman spectroscopy. In order to determine the values for the thermal conductivity κ, the fraction of the laser power absorbed inside the GaAs nanowire is estimated by numerical simulations. The thermal conductivity of nanowires with homogeneous diameter is found to lie in the range of 8–36 W m−1 K−1. The change of the temperature profile in the presence of a tapering was investigated. Furthermore, we discuss the influence of laser heating in ambient conditions on the value of κ.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

gallium arsenide, heat treatment, III-V semiconductors, laser materials processing, nanowires, numerical analysis, Raman spectra, semiconductor quantum wires, thermal conductivity

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3532848

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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