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27 Dec 2010

Volume 97, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 97, 263701 (2010); http://dx.doi.org/10.1063/1.3530124 (3 pages)

Shu-Hsien Liao, Kai-Wen Huang, Hong-Chang Yang, Chang-Te Yen, M. J. Chen, Hsin-Hsien Chen, Herng-Er Horng, and Shieh Yueh Yang
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Degradation of InGaN-based laser diodes analyzed by means of electrical and optical measurements

M. Meneghini, N. Trivellin, K. Orita, S. Takigawa, T. Tanaka, D. Ueda, G. Meneghesso, and E. Zanoni

Appl. Phys. Lett. 97, 263501 (2010); http://dx.doi.org/10.1063/1.3527088 (3 pages) | Cited 2 times

Online Publication Date: 28 December 2010

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In this paper we present a detailed analysis of the degradation of InGaN-based laser diodes carried out by means of electrical and optical techniques. The study is based on the comparison between the degradation kinetics of laser diodes and light-emitting diode (LED)-like samples, i.e., devices with the same epitaxial structure as the lasers, but with no ridge and facets. Results described in the following indicate that degradation of lasers and LED-like samples is due to the same mechanism, possibly involving the generation of point defects within the active region of the devices. Furthermore, since degradation occurs both in lasers and in LED-like samples (i.e., structures with no current confinement), results suggest that degradation of lasers is not correlated with the geometry of the devices, nor to worsening of current confinement under the ridge.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Control of defect-mediated tunneling barrier heights in ultrathin MgO films

D. J. Kim, W. S. Choi, F. Schleicher, R. H. Shin, S. Boukari, V. Davesne, C. Kieber, J. Arabski, G. Schmerber, E. Beaurepaire, W. Jo, and M. Bowen

Appl. Phys. Lett. 97, 263502 (2010); http://dx.doi.org/10.1063/1.3531652 (3 pages)

Online Publication Date: 28 December 2010

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The impact of oxygen vacancies on local tunneling properties across rf-sputtered MgO thin films was investigated by optical absorption spectroscopy and conducting atomic force microscopy. Adding O2 to the Ar plasma during MgO growth alters the oxygen defect populations, leading to improved local tunneling characteristics such as a lower density of current hotspots and a lower tunnel current amplitude. We discuss a defect-based potential landscape across ultrathin MgO barriers.
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73.61.Ng Insulators
73.40.Gk Tunneling
78.66.Nk Insulators
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.jd Vacancies
78.30.Hv Other nonmetallic inorganics

Field emission and material transfer in microswitches electrical contacts

M. Vincent, S. W. Rowe, C. Poulain, D. Mariolle, L. Chiesi, F. Houzé, and J. Delamare

Appl. Phys. Lett. 97, 263503 (2010); http://dx.doi.org/10.1063/1.3529474 (3 pages) | Cited 1 time

Online Publication Date: 29 December 2010

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Material transfer from one electrical contact part to the other has already been reported in microswitches operating under hot switching conditions. By using an atomic force microscope with a conductive cantilever, we highlighted that electrons are emitted from the cathode when electrode separation becomes less than a few tens of nanometers. This electronic emission proves to follow Fowler–Nordheim theory and leads to the damage of the opposite contact member (anode) by impact heating. Anode material evaporates under this extreme heating and deposits on the opposite contact member (cathode), leading to a material transfer from anode to cathode.
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85.45.-w Vacuum microelectronics
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
84.32.Dd Connectors, relays, and switches

Plasma oscillations and terahertz instability in field-effect transistors with Corbino geometry

O. Sydoruk, R. R. A. Syms, and L. Solymar

Appl. Phys. Lett. 97, 263504 (2010); http://dx.doi.org/10.1063/1.3532850 (3 pages) | Cited 1 time

Online Publication Date: 29 December 2010

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Propagating between the contacts of a field-effect transistor (FET), plasma waves in its channel can become unstable and lead to generation of terahertz radiation. While previous studies of this instability concentrated on rectangular FETs, alternative geometries present fresh opportunities. We studied theoretically plasma oscillations in a gated FET with Corbino geometry where, in contrast with the rectangular FET, the oscillations become unstable at symmetric boundary conditions. Moreover, their lowest eigenfrequency is almost twice as high as that in the rectangular FET at comparable instability increments. These advantages make the Corbino FET promising for practical realizations of terahertz oscillators.
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85.30.Tv Field effect devices
84.40.-x Radiowave and microwave (including millimeter wave) technology
02.40.-k Geometry, differential geometry, and topology

Switching control of resistive switching devices

An Chen

Appl. Phys. Lett. 97, 263505 (2010); http://dx.doi.org/10.1063/1.3532969 (3 pages) | Cited 4 times

Online Publication Date: 29 December 2010

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Switching current control plays a critical role in the operation of resistive switching devices. Both on-state resistance and maximum reset current show strong dependence on the current limit during set switching. The dependence in unipolar switching devices can be explained by the power-driven nature of reset and dynamic competition between set and reset forces. Effective switching control improves device characteristics including uniform resistance distribution and low reset current. However, it also presents challenges for the choice of selection devices and the feasibility of unconventional architectures for resistive switching devices.
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85.30.Tv Field effect devices
84.32.Dd Connectors, relays, and switches

Stepwise cosensitization through chemically bonding organic dye to CdS quantum-dot-sensitized TiO2 electrode

Seulgi So, Sheng-Qiang Fan, Hyunbong Choi, Chulwoo Kim, Nara Cho, Kihyung Song, and Jaejung Ko

Appl. Phys. Lett. 97, 263506 (2010); http://dx.doi.org/10.1063/1.3533906 (3 pages)

Online Publication Date: 30 December 2010

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An organic dye (JK218) with thiol moiety as an anchoring group was synthesized and explored to assemble a cosensitized TiO2 electrode in combination with an inorganic CdS quantum-dot. Due to the selective adsorption of JK218 on the surface of CdS through thiol group, the developed cosensitized electrode demonstrates cascade architecture with CdS coating on TiO2 while JK218 functions as a covering on CdS. Most importantly, the energy levels of the TiO2–CdS-JK218 electrode were also found to be stepwise aligned, which accordingly makes electrons efficiently inject from JK218 to CdS under illumination and finally collect to TiO2. This constructed cosensitized electrode with an organic sensitizer (JK218) and an inorganic quantum-dot (CdS) being selectively bonded together is expected to be valuable for the interface design of next generation solar cells.
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81.20.-n Methods of materials synthesis and materials processing
68.43.Mn Adsorption kinetics
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