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27 Dec 2010

Volume 97, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 97, 263701 (2010); http://dx.doi.org/10.1063/1.3530124 (3 pages)

Shu-Hsien Liao, Kai-Wen Huang, Hong-Chang Yang, Chang-Te Yen, M. J. Chen, Hsin-Hsien Chen, Herng-Er Horng, and Shieh Yueh Yang
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Fine tuning epitaxial strain in ferroelectrics: PbxSr1−xTiO3 on DyScO3

G. Rispens, J. A. Heuver, and B. Noheda

Appl. Phys. Lett. 97, 262901 (2010); http://dx.doi.org/10.1063/1.3532103 (3 pages)

Online Publication Date: 29 December 2010

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Epitaxial strain can be efficiently used to modify the properties of ferroelectric thin films. From the experimental viewpoint, the challenge is to fine-tune the magnitude of the strain. We illustrate here how, by using a suitable combination of composition and substrate, the magnitude of the epitaxial strain can be controlled in a continuous manner. The phase diagram of PbxSr1−xTiO3 films grown epitaxially on (110)-DyScO3 is calculated using a Devonshire–Landau approach. A boundary between in-plane and out-of-plane oriented ferroelectric phases is predicted to take place at x ≈ 0.8. A series of PbxSr1−xTiO3 epitaxial films grown by molecular beam epitaxy shows good agreement with the proposed phase diagram.
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77.84.Cg PZT ceramics and other titanates
81.30.Dz Phase diagrams of other materials
77.80.bn Strain and interface effects
77.55.fp Other ferroelectric films

Leakage current behavior in lead-free ferroelectric (K,Na)NbO3-LiTaO3-LiSbO3 thin films

M. Abazari and A. Safari

Appl. Phys. Lett. 97, 262902 (2010); http://dx.doi.org/10.1063/1.3531575 (3 pages) | Cited 2 times

Online Publication Date: 29 December 2010

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Conduction mechanisms in epitaxial (001)-oriented pure and 1 mol % Mn-doped (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.1,Sb0.06)O3 (KNN-LT-LS) thin films on SrTiO3 substrate were investigated. Temperature dependence of leakage current density was measured as a function of applied electric field in the range of 200–380 K. It was shown that the different transport mechanisms dominate in pure and Mn-doped thin films. In pure (KNN-LT-LS) thin films, Poole-Frenkel emission was found to be responsible for the leakage, while Schottky emission was the dominant mechanism in Mn-doped thin films at higher electric fields. This is a remarkable yet clear indication of effect of 1 mol % Mn on the resistive behavior of such thin films.
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77.55.fj Niobate- and tantalate-based films
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
73.50.Fq High-field and nonlinear effects
73.30.+y Surface double layers, Schottky barriers, and work functions

Thermal stability of TiN/HfSiON gate stack structures studied by synchrotron-radiation photoemission spectroscopy

S. Toyoda, H. Kamada, H. Kumigashira, M. Oshima, K. Iwamoto, T. Sukegawa, and Z. Liu

Appl. Phys. Lett. 97, 262903 (2010); http://dx.doi.org/10.1063/1.3532846 (3 pages) | Cited 1 time

Online Publication Date: 29 December 2010

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We have investigated the thermal stability of TiN/HfSiON gate stack structures using synchrotron-radiation photoemission spectroscopy. Spectral intensities of the Si-oxide components in Si 2p core-level spectra systematically increase with annealing temperature, which strongly depends on the thickness of the TiN metal gate layer. Changes brought by annealing procedures in depth profiles of atomic concentration indicate segregation of Si-atoms at the TiN surface. Furthermore, chemical-state-resolved depth analyses by angle-resolved photoemission spectroscopy suggest formation of TiSix and HfNy components due to chemical bond breaking in the HfSiON layer during TiN film growth. This can be related to the degradation of thermal stability.
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79.60.-i Photoemission and photoelectron spectra
81.40.Gh Other heat and thermomechanical treatments

Effect of domain structure on dielectric nonlinearity in epitaxial BiFeO3 films

J. F. Ihlefeld, C. M. Folkman, S. H. Baek, G. L. Brennecka, M. C. George, J. F. Carroll, III, and C. B. Eom

Appl. Phys. Lett. 97, 262904 (2010); http://dx.doi.org/10.1063/1.3533017 (3 pages) | Cited 6 times

Online Publication Date: 29 December 2010

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Rayleigh analysis has been used to investigate dielectric nonlinearity in epitaxial (001)-oriented BiFeO3 films with engineered domain structures from single- to four-variant and stripe domain samples with 71° and 109° domain walls. Single-domain variant films display minimal irreversible contributions, whereas the ratio of irreversible to reversible contributions increases by approximately one order of magnitude as the number of variants increases to two- and four-variants, respectively. These measurements indicate that the density of domain walls and degree of domain wall complexity influence the number and strength of domain wall pinning sites.
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77.80.Dj Domain structure; hysteresis
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
68.55.-a Thin film structure and morphology

Observation of anomalous phonons in orthorhombic rare-earth manganites

P. Gao, H. Y. Chen, T. A. Tyson, Z. X. Liu, J. M. Bai, L. P. Wang, Y. J. Choi, and S.-W. Cheong

Appl. Phys. Lett. 97, 262905 (2010); http://dx.doi.org/10.1063/1.3533022 (3 pages)

Online Publication Date: 30 December 2010

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We observe the appearance of a phonon near the lock-in temperature in orthorhombic REMnO3 (RE denotes rare earth) (RE: Lu and Ho) and anomalous phonon hardening in orthorhombic LuMnO3. The anomalous phonon occurs at the onset of spontaneous polarization. No such changes were found in incommensurate orthorhombic DyMnO3. These observations directly reveal different electric polarization mechanisms in the E-type and incommensurate-type orthorhombic REMnO3.
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63.20.Ry Anharmonic lattice modes

Correlation between the nanoscale electrical and morphological properties of crystallized hafnium oxide-based metal oxide semiconductor structures

V. Iglesias, M. Porti, M. Nafría, X. Aymerich, P. Dudek, T. Schroeder, and G. Bersuker

Appl. Phys. Lett. 97, 262906 (2010); http://dx.doi.org/10.1063/1.3533257 (3 pages) | Cited 4 times

Online Publication Date: 30 December 2010

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The relationship between electrical and structural characteristics of polycrystalline HfO2 films has been investigated by conductive atomic force microscopy under ultrahigh vacuum conditions. The results demonstrate that highly conductive and breakdown (BD) sites are concentrated mainly at the grain boundaries (GBs). Higher conductivity at the GBs is found to be related to their intrinsic electrical properties, while the positions of the electrical stress-induced BD sites correlate to the local thinning of the dielectric. The results indicate that variations in the local characteristics of the high-k film caused by its crystallization may have a strong impact on the electrical characteristics of high-k dielectric stacks.
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77.55.df For silicon electronics
77.22.Jp Dielectric breakdown and space-charge effects
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
64.70.K- Solid-solid transitions
61.72.Mm Grain and twin boundaries
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