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Applied Physics Letters / Volume 97 / Issue 3 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 97, 033103 (2010); http://dx.doi.org/10.1063/1.3462936 (3 pages)

Pore-size dependence of the thermal conductivity of porous silicon: A phonon hydrodynamic approach

F. X. Alvarez1, D. Jou1,2, and A. Sellitto3

1Departament de Física, Universitat Autònoma de Barcelona, 08193 Bellaterra, Catalonia, Spain
2Institut d’Estudis Catalans, Carme 47, Barcelona 08001, Catalonia, Spain
3Department of Mathematics and Computer Science, University of Basilicata, Campus Macchia Romana, 85100 Potenza, Italy

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(Received 12 April 2010; accepted 21 June 2010; published online 20 July 2010)

Phonon hydrodynamics is used to analyze the influence of porosity and of pore size on reduction in thermal conductivity in porous silicon, with respect to crystalline silicon. The expressions predict that the thermal conductivity is lower for higher porosity and for smaller pore radius, as a consequence of phonon ballistic effects. The theoretical results describe experimental data better than the assumption that they only depend on porosity.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

elemental semiconductors, phonons, porosity, porous semiconductors, silicon, thermal conductivity

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3462936

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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    J. -H. Lee, J. C. Grossman, J. Reed, and G. Galli, Appl. Phys. Lett. 91, 223110 (2007)APPLAB000091000022223110000001.

    Q. Shen and T. Toyoda, Rev. Sci. Instrum. 74, 601 (2003)RSINAK000074000001000601000001.

    D. Song and G. Chen, Appl. Phys. Lett. 84, 687 (2004)APPLAB000084000005000687000001.

    R. A. Guyer and J. A. Krumhansl, Phys. Rev. 148, 766 (1966).

    R. A. Guyer and J. A. Krumhansl, Phys. Rev. 148, 778 (1966).

    H. Lee, D. Vashaee, D. Z. Wang, M. S. Dresselhaus, Z. F. Ren, and G. Chen, J. Appl. Phys. 107, 094308 (2010)JAPIAU000107000009094308000001.

    F. X. Alvarez and D. Jou, J. Appl. Phys. 103, 094321 (2008)JAPIAU000103000009094321000001.

    F. X. Alvarez, D. Jou, and A. Sellitto, J. Appl. Phys. 105, 014317 (2009)JAPIAU000105000001014317000001.

    A. Sellitto, F. X. Alvarez, and D. Jou, J. Appl. Phys. 107, 064302 (2010)JAPIAU000107000006064302000001.

    L. Durlofsky and J. F. Brady, Phys. Fluids 30, 3329 (1987)PFLDAS000030000011003329000001.

    F. Sharipov, Phys. Rev. E 69, 061201 (2004).

    R. A. Millikan, Phys. Rev. 22, 1 (1923).

    C. L. Bailey, R. W. Barber, D. R. Emerson, D. A. Lockerby, and J. M. Reese, AIP Conf. Proc. 762, 743 (2005)APCPCS000762000001000743000001.

    F. X. Alvarez and D. Jou, Appl. Phys. Lett. 90, 083109 (2007)APPLAB000090000008083109000001.


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