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Applied Physics Letters / Volume 97 / Issue 3 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 97, 033111 (2010); http://dx.doi.org/10.1063/1.3458707 (3 pages)

Stress generation in silicon particles during lithium insertion

Stephanie Golmon1, Kurt Maute1, Se-Hee Lee2, and Martin L. Dunn2

1Department of Aerospace Engineering Sciences, University of Colorado, CB 429, Boulder, CO 80301–0429, USA
2Department of Mechanical Engineering, University of Colorado at Boulder, USA

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(Received 28 April 2010; accepted 8 June 2010; published online 21 July 2010)

Using a fully-coupled diffusion-elasticity model with Butler–Volmer surface kinetics, we simulate the insertion of lithium into spherical silicon particles. Simulations predict the evolution of concentration, displacements, and stresses in the particles during the first insertion of Li. The particle response depends strongly on the reaction kinetics and the resulting stresses can be above the tensile failure stress of silicon depending on the particle size and discharge rate.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

chemical interdiffusion, discharges (electric), doping profiles, elemental semiconductors, internal stresses, ion implantation, lithium, particle size, reaction kinetics, semiconductor doping, silicon

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3458707

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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    References

    Y. -T. Cheng and M. W. Verbrugge, J. Appl. Phys. 104, 083521 (2008)JAPIAU000104000008083521000001.

    P. Sharma, S. Ganti, and N. Bhate, Appl. Phys. Lett. 82, 535 (2003)APPLAB000082000004000535000001.

    W. Suwito, M. L. Dunn, S. J. Cunningham, and D. T. Read, J. Appl. Phys. 85, 3519 (1999)JAPIAU000085000007003519000001.


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