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Applied Physics Letters / Volume 97 / Issue 3 / DEVICE PHYSICS

Appl. Phys. Lett. 97, 033509 (2010); http://dx.doi.org/10.1063/1.3467815 (3 pages)

Effects of piezopotential spatial distribution on local contact dictated transport property of ZnO micro/nanowires

Yan Zhang1,2, Youfan Hu1, Shu Xiang1, and Zhong Lin Wang1

1School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA
2Institute of Theoretical Physics, Lanzhou University, Lanzhou 730000, People's Republic of China

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(Received 9 June 2010; accepted 4 July 2010; published online 23 July 2010)

We present a study on the effect of deformation induced piezoelectric potential (piezopotential) in a ZnO micro/nanowire on its electrical transport properties by choosing different contacting locations on the wire to form a metal-ZnO contact. When a ZnO wire is under nonuniform deformation, the local piezopotential distribution at different positions shows significant effect on and distinct trend of variation in the charge carrier transport characteristic. This study has a broad impact on understanding the characteristics of piezotronic devices based on nanowires of wurtzite materials by controlling local contact position and contact size.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

carrier mobility, deformation, electrical contacts, II-VI semiconductors, nanowires, piezoelectricity, semiconductor-metal boundaries, zinc compounds

PACS

  • 73.63.Nm

    Quantum wires

  • 72.20.Fr

    Low-field transport and mobility; piezoresistance

  • 77.65.-j

    Piezoelectricity and electromechanical effects

  • 73.40.Ns

    Metal-nonmetal contacts

  • 81.40.Lm

    Deformation, plasticity, and creep

  • 62.20.F-

    Deformation and plasticity

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3467815

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    Y. Liu, M. Z. Kauser, M. I. Nathan, P. P. Ruden, S. Dogan, H. Morkoc, S. S. Park, and K. Y. Lee, Appl. Phys. Lett. 84, 2112 (2004)APPLAB000084000012002112000001.

    C. S. Lao, Q. Kuang, Z. L. Wang, M. C. Park, and Y. L. Deng, Appl. Phys. Lett. 90, 262107 (2007)APPLAB000090000026262107000001.

    Z. Y. Gao, J. Zhou, Y. D. Gu, P. Fei, Y. Hao, G. Bao, and Z. L. Wang, J. Appl. Phys. 105, 113707 (2009)JAPIAU000105000011113707000001.

    K. W. Chung, Z. Wang, J. C. Costa, F. Williamsion, P. P. Ruden, and M. I. Nathan, Appl. Phys. Lett. 59, 1191 (1991)APPLAB000059000010001191000001.


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