Monolithic n-type conductivity on low temperature grown freestanding ultrananocrystalline diamond films

Joseph, P. T.; Tai, N. H.; Lin, I. N.

doi:doi:10.1063/1.3472204

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Large Seebeck coefficients and thermoelectric power factor of La-doped SrTiO₃ thin films

Seebeck coefficients and conductivity of La-doped SrTiO3 thin films grown by molecular beam epitaxy were measured as a function of carrier concentration. At low carrier concentrations, thin films show very high Seebeck coefficients (up to 980 μV K−1). The maximum thermoelectric power factor was 39 μWcm−1 K−2 at a carrier concentration of 7×1020 cm−3. La-delta-doped superlattices were also characterized and exhibited Seebeck coefficients of ∼ 500 μV K−1. The results are discussed in the context...

p-type doping and codoping of ZnO based on nitrogen is ineffective: An ab initio clue

Whereas nitrogen is regarded as the best candidate to induce p-type doping in ZnO, the practical results are mainly negative either for monodoping or codoping. We perform first-principles calculations to investigate the p-type nature of boron and nitrogen codoped ZnO. The p-type character can be obtained with the proper BN3 substitutional clusters. We propose a mechanism that explains the difficulties to synthesize p-type ZnO samples: the formation of N2 molecules substituting oxygen, which are...

We report monolithic n-type conductivity on low-temperature (<570 °C) grown ultrananocrystalline diamond (UNCD) films by Li-diffusion (about 255 nm) from LiNbO₃ substrates. Low resistivity of 1.2 Ω cm with carrier concentration of −2×10²⁰ cm⁻³ is obtained on freestanding UNCD films. The films bonded to Cu-tape show very low turn-on field of 4.2 V/μm with emission current density of above 0.3 mA/cm² at a low applied filed of 10 V/μm. The n-type conductivity of low-temperature Li-diffused UNCD films overwhelms that of the high-temperature ( ≥ 800 °C) nitrogen doped ones and will make a significant impact to diamond-based electronics.

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KEYWORDS and PACS

Keywords

carrier density, diamond, diffusion, electrical conductivity, electrical resistivity, elemental semiconductors, lithium, nitrogen, semiconductor doping, semiconductor thin films

PACS

73.61.Cw

Elemental semiconductors
61.72.uf

Ge and Si
81.05.Cy

Elemental semiconductors
68.55.ag

Semiconductors

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.3472204

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0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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