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Appl. Phys. Lett. 97, 043111 (2010); http://dx.doi.org/10.1063/1.3469930 (3 pages)

Optimizing transistor performance of percolating carbon nanotube networks

V. K. Sangwan1,2, A. Behnam3, V. W. Ballarotto2, M. S. Fuhrer1, Ant Ural3, and E. D. Williams1,2

1Department of Physics, University of Maryland, College Park, Maryland 20742, USA
2Laboratory for Physical Sciences, College Park, Maryland 20740, USA
3Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611, USA

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(Received 22 April 2010; accepted 2 July 2010; published online 29 July 2010)

In percolating networks of mixed metallic and semiconducting carbon nanotubes (CNTs), there is a tradeoff between high on-current (dense networks) and high on/off ratio (sparse networks). Experiments on transistors and Monte Carlo simulations were performed to determine the scaling behavior of device resistivity as a function of channel length (L) for CNT density (p) between 0.04 and 1.29 CNTs/μm2 in the on- and off-states (nanotube root mean square length of 5 μm). Optimized devices with field-effect mobility up to 50 cm2/V s at on/off ratio >103 were obtained at channel width W = 50 μm and L>70 μm for p = 0.54–0.81 CNTs/μm2.

© 2010 American Institute of Physics

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0003-6951 (print)  
1077-3118 (online)

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