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Applied Physics Letters / Volume 97 / Issue 5 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 97, 051103 (2010); http://dx.doi.org/10.1063/1.3474799 (3 pages)

Quantum well saturable absorber mirror with electrical control of modulation depth

Xiaomin Liu1, Edik U. Rafailov2, Daniil Livshits3, and Dmitry Turchinovich1

1DTU Fotonik—Department of Photonics Engineering, Technical University of Denmark, DK-2800 Kgs. Lyngby, Denmark
2School of Engineering, Physics, and Mathematics, University of Dundee, Dundee DD1 4HN, United Kingdom
3Innolume GmbH, Konrad-Adenauer-Allee 11, 44263 Dortmund, Germany

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(Received 17 June 2010; accepted 9 July 2010; published online 2 August 2010)

We demonstrate a quantum well (QW) semiconductor saturable absorber mirror (SESAM) comprising low-temperature grown InGaAs/GaAs QWs incorporated into a p-i-n structure. By applying the reverse bias voltage in the range 0–2 V to the p-i-n structure, we were able to change the SESAM modulation depth in the range 2.5–0.5%, as measured by nonlinear reflectivity of 450 fs long laser pulses with 1065 nm central wavelength, in the pump fluence range 1.6–26.7 μJ/cm2. This electrical control of the modulation depth is achieved by controlling the small-signal loss of the SESAM via quantum-confined Stark effect in the QWs.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

mirrors, quantum confined Stark effect, semiconductor quantum wells

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3474799

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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