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Applied Physics Letters / Volume 97 / Issue 5 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 97, 051109 (2010); http://dx.doi.org/10.1063/1.3457908 (3 pages)

Background carrier concentration in midwave and longwave InAs/GaSb type II superlattices on GaAs substrate

A. Khoshakhlagh1, F. Jaeckel1, C. Hains1, J. B. Rodriguez2, L. R. Dawson1, K. Malloy1, and S. Krishna1

1Department of Electrical and Computer Engineering, Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106, USA
2Institut d’Electronique du Sud, UMR 5214 CNRS, Université Montpellier 2, Place Eugène Bataillon, 34095 Montpellier Cedex 5, France

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(Received 22 January 2010; accepted 10 May 2010; published online 5 August 2010)

We report on the measurement of the background carrier concentration of midwave and long-wave infrared (MWIR and LWIR) type-II InAs/GaSb superlattices (SLs) on GaAs substrates. The transport properties of SLs are characterized using temperature dependent Hall measurements. It is found that the conduction in the MWIR SLs is dominated by holes at low temperatures and by electrons at high temperatures. However, the transport in LWIR SL is dominated by electrons at all temperatures. In-plane transport characteristics of LW SLs grown at different temperatures shows that interface roughness scattering is the dominant scattering mechanism at high temperatures.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

carrier density, gallium compounds, III-V semiconductors, indium compounds, interface roughness, quantum Hall effect, scattering, semiconductor superlattices

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3457908

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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