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Applied Physics Letters / Volume 97 / Issue 5 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 97, 051111 (2010); http://dx.doi.org/10.1063/1.3473824 (3 pages)

Impact of heavy hole-light hole coupling on optical selection rules in GaAs quantum dots

T. Belhadj1, T. Amand1, A. Kunold1,2, C.-M. Simon1,3, T. Kuroda4, M. Abbarchi4, T. Mano4, K. Sakoda4, S. Kunz1, X. Marie1, and B. Urbaszek1

1INSA-CNRS-UPS, LPCNO, Université de Toulouse, 135 Av. Rangueil, 31077 Toulouse, France
2Departamento de Ciencias Básicas, UAM-A, Col. Reynosa Tamaulipas, 02200 México D.F., Mexico
3CNRS-UPS, LCAR, IRSAMC, Université de Toulouse, 31062 Toulouse, France
4National Institute for Material Science, Namiki 1-1, Tsukuba 305-0044, Japan

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(Received 2 June 2010; accepted 12 July 2010; published online 6 August 2010)

We report strong heavy hole-light hole mixing in GaAs quantum dots grown by droplet epitaxy. Using the neutral and charged exciton emission as a monitor we observe the direct consequence of quantum dot symmetry reduction in this strain free system. By fitting the polar diagram of the emission with simple analytical expressions obtained from k⋅p theory we are able to extract the mixing that arises from the heavy-light hole coupling due to the geometrical asymmetry of the quantum dot.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, excitons, gallium arsenide, III-V semiconductors, k.p calculations, molecular beam epitaxial growth, photoluminescence, semiconductor epitaxial layers, semiconductor quantum dots

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3473824

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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