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Applied Physics Letters / Volume 97 / Issue 5 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 97, 051113 (2010); http://dx.doi.org/10.1063/1.3478011 (3 pages)

Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy

A. Nishikawa, N. Furukawa, T. Kawasaki, Y. Terai, and Y. Fujiwara

Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

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(Received 15 June 2010; accepted 13 July 2010; published online 6 August 2010)

We investigated the luminescence properties of Eu-doped GaN (GaN:Eu) grown by atmospheric-pressure organometallic vapor phase epitaxy. The GaN:Eu exhibited radiant red emission due to the intra-4f shell transition of Eu3+ ions at room temperature. The intensity of the dominant peak was about 4 times higher than that in the sample grown at 10 kPa, even though the Eu concentration was only half that of the 10 kPa sample. This was mainly caused by the enhancement of the energy transfer from the GaN host to Eu ions. The enhanced energy transfer resulted in improved luminescence properties of a GaN:Eu light-emitting diode.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

europium, gallium compounds, III-V semiconductors, light emitting diodes, luminescence, MOCVD, semiconductor growth, vapour phase epitaxial growth, wide band gap semiconductors

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3478011

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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