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Applied Physics Letters / Volume 97 / Issue 5 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 97, 051902 (2010); http://dx.doi.org/10.1063/1.3473826 (3 pages)

Direct evidence of LO phonon-plasmon coupled modes in n-GaN

Devki N. Talwar

Department of Physics, Indiana University of Pennsylvania, 975 Oakland Avenue, 56 Weyandt Hall, Indiana, Pennsylvania 15705-1087, USA

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(Received 27 May 2010; accepted 9 July 2010; published online 3 August 2010)

We report theoretical results of the far-infrared transmission in oblique incidence for undoped and doped GaN epilayers. For c-GaN, our results in p-polarization find transmission minima at LO and TO frequencies while in s-polarization only one minima corresponding to TO mode is revealed. For c-GaN/GaAs/AlN (buffer) layer we noticed minima in s-polarization corresponding to TO modes of c-GaN and c-AlN while in p-polarization the features related to TO modes as well as minima linked to LO modes are found. The shift in L+ modes with increasing carrier concentration (N) provided direct evidence of estimating N in doped GaN.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, buffer layers, carrier density, gallium arsenide, gallium compounds, III-V semiconductors, infrared spectra, phonon-plasmon interactions, Raman spectra, semiconductor doping, semiconductor epitaxial layers, wide band gap semiconductors

PACS

  • 73.61.Ey

    III-V semiconductors

  • 71.45.Gm

    Exchange, correlation, dielectric and magnetic response functions, plasmons

  • 68.55.ag

    Semiconductors

  • 78.66.Fd

    III-V semiconductors

  • 78.30.Fs

    III-V and II-VI semiconductors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3473826

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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