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Applied Physics Letters / Volume 97 / Issue 5 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 97, 051903 (2010); http://dx.doi.org/10.1063/1.3475486 (3 pages)

Suppression of boron–oxygen defects in p-type Czochralski silicon by germanium doping

Xuegong Yu, Peng Wang, Peng Chen, Xiaoqiang Li, and Deren Yang

State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China

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(Received 4 July 2010; accepted 15 July 2010; published online 3 August 2010; publisher error corrected 5 August 2010)

We have demonstrated the impact of germanium (Ge) doping on the boron–oxygen (B–O) defects in p-type Czochralski (CZ) silicon. It is found that germanium can effectively suppress the formation of B–O defects, whereby the reduction percentage of B–O defect concentration increases with the Ge content. The efficiency of Ge-doped CZ silicon solar cell and the power output of corresponding module both exhibit a significantly lower loss. Based on the fact of a relatively lower concentration of O2i existing in GCZ silicon, it is believed that the suppression of B–O defects is a result of Ge improving the diffusion barrier of Oi.

© 2010 American Institute of Physics

EDITORIALLY RELATED

  1. Publisher's Note: “Suppression of boron–oxygen defects in p-type Czochralski silicon by germanium doping” [Appl. Phys. Lett. 97, 051903 (2010)]
    Xuegong Yu et al.
    Appl. Phys. Lett. 97, 139901 (2010)APPLAB000097000013139901000001

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KEYWORDS and PACS

Keywords

crystal defects, diffusion barriers, elemental semiconductors, germanium, semiconductor doping, silicon, solar cells

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3475486

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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