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Applied Physics Letters / Volume 97 / Issue 5 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 97, 051904 (2010); http://dx.doi.org/10.1063/1.3476344 (3 pages)

Indium incorporation and optical transitions in InGaN bulk materials and quantum wells with arbitrary polarity

M. V. Durnev1, A. V. Omelchenko1, E. V. Yakovlev2, I. Yu. Evstratov2, and S. Yu. Karpov2

1St.Petersburg Academic University–Nanotechnology Research and Education Centre, RAS, 8/3 Khlopin str., St.Petersburg 195220, Russia
2STR Group–Soft Impact Ltd., 27 Engels Av., St.Petersburg 194156, Russia

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(Received 10 June 2010; accepted 15 July 2010; published online 5 August 2010)

Indium incorporation into strained InGaN coherently grown on a GaN substrate with arbitrary polarity is simulated using a simplified epitaxy model. The InGaN composition is predicted as a function of C-axis inclination angle. Effect of strain originated from the lattice mismatch on optical transitions in the bulk InGaN and quantum wells is examined with account of both complex valence band structure and polarization charges induced at the InGaN/GaN interfaces. A higher indium incorporation on nonpolar and semipolar planes, as compared to the ordinary C-plane, is found to not necessarily result in a longer emission wavelength.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

dielectric polarisation, gallium compounds, III-V semiconductors, indium compounds, interface structure, internal stresses, photoluminescence, semiconductor epitaxial layers, semiconductor quantum wells, valence bands, wide band gap semiconductors

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3476344

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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