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Applied Physics Letters / Volume 97 / Issue 5 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 97, 051907 (2010); http://dx.doi.org/10.1063/1.3478002 (3 pages)

Silicon impurity-induced layer disordering of AlGaN/AlN superlattices

J. J. Wierer, Jr., A. A. Allerman, and Q. Li

Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

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(Received 16 June 2010; accepted 20 July 2010; published online 5 August 2010)

Impurity-induced layer disordering is demonstrated in Al0.1Ga0.9N/AlN superlattices grown by metal-organic vapor phase epitaxy. During growth at temperatures as low as 885 °C and under post growth annealing at 1000 °C in N2 the heterointerfaces of Si-doped (Si concentration >8×1019 cm−3) superlattices exhibit layer disordering (intermixing) while the unintentionally doped superlattices remain stable. Shifts in the intersubband energy transitions and scanning transmission electron microscope images showing changes in the layer abruptness are used to verify layer disordering due to Si diffusion in Al0.1Ga0.9N/AlN superlattices.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, annealing, diffusion, doping profiles, elemental semiconductors, gallium compounds, III-V semiconductors, MOCVD, scanning-transmission electron microscopy, semiconductor growth, semiconductor superlattices, silicon, wide band gap semiconductors

PACS

  • 68.65.Cd

    Superlattices

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

  • 66.30.J-

    Diffusion of impurities

  • 61.72.sd

    Impurity concentration

  • 61.72.Cc

    Kinetics of defect formation and annealing

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3478002

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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