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Applied Physics Letters / Volume 97 / Issue 5 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 97, 052101 (2010); http://dx.doi.org/10.1063/1.3475402 (3 pages)

Control of interface abruptness of polar MgZnO/ZnO quantum wells grown by pulsed laser deposition

Matthias Brandt, Martin Lange, Marko Stölzel, Alexander Müller, Gabriele Benndorf, Jan Zippel, Jörg Lenzner, Michael Lorenz, and Marius Grundmann

Institut für Experimentelle Physik II, Universität Leipzig, Linnèstr. 5, 04103 Leipzig, Germany

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(Received 10 June 2010; accepted 14 July 2010; published online 2 August 2010)

A strong quantum confined Stark effect (QCSE) was observed in wedge shaped MgZnO/ZnO quantum wells (QWs) grown by pulsed laser deposition. A reduced laser fluence of 1.8 J/cm2 was used. Reference samples grown at higher standard fluence 2.4 J/cm2 showed only a negligible QCSE. Using off-axis deposition without substrate rotation, a constant composition of the barriers was maintained while varying the well width in a wedge shaped QW. A redshift of the QW luminescence with increasing QW thickness up to 230 meV below the ZnO emission was found, accompanied by an increase in the exciton lifetime from 0.3 ns up to 4.2 μs.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

excitons, II-VI semiconductors, luminescence, magnesium compounds, pulsed laser deposition, quantum confined Stark effect, red shift, semiconductor growth, semiconductor quantum wells, wide band gap semiconductors, zinc compounds

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3475402

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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