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Applied Physics Letters / Volume 97 / Issue 5 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 97, 052104 (2010); http://dx.doi.org/10.1063/1.3477949 (3 pages)

Vertical low-voltage oxide transistors gated by microporous SiO2/LiCl composite solid electrolyte with enhanced electric-double-layer capacitance

Jie Jiang1,2, Jia Sun2, Bin Zhou2, Aixia Lu2, and Qing Wan1,2

1Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of China
2Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, Hunan University, Changsha 410082, People’s Republic of China

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(Received 20 April 2010; accepted 20 July 2010; published online 4 August 2010)

Vertical low-voltage indium-tin oxide field-effect transistors (FETs) gated by microporous SiO2-based solid electrolyte are fabricated at room temperature. Our results indicate that Li ions can enhance the electric-double-layer capacitance of the microporous SiO2 solid electrolyte and reduce the operation voltage of the vertical FETs from 1.5 to 0.8 V. Such vertical low-voltage FETs exhibited a good performance with a high current output ( ∼ 1.0 A/cm2), a low subthreshold swing (<80 mV/decade), and a large on-off ratio (>106), respectively. An operation mechanism which provides a better insight into the oxide-based vertical FETs is discussed.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

composite materials, electrochemistry, field effect transistors, indium compounds, lithium compounds, silicon compounds, solid electrolytes, tin compounds

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3477949

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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